IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
250 V
V
GS
= 10 V
54
9.2
26
Single
0.240
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
I
2
PAK (TO-262)
TO-220
D
S
S
G
D
G
D
G
D
2
PAK (TO-263)
S
N-Channel
MOSFET
G D
S
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SiHF644N-E3
IRF644N
SnPb
SiHF644N
Note
a. See device orientation.
SiHF644NS
SiHF644NSTL
a
SiHF644NSTR
a
SiHF644NL
SiHF644NS-E3
IRF644NS
SiHF644NSTL-E3
a
IRF644NSTRL
a
SiHF644NSTR-E3
a
IRF644NSTRR
a
SiHF644NL-E3
IRF644NL
TO-220
IRF644NPbF
D
2
PAK (TO-263)
IRF644NSPbF
D
2
PAK (TO-263)
IRF644NSTRLPbF
a
D
2
PAK (TO-263)
IRF644NSTRRPbF
a
I
2
PAK (TO-262)
IRF644NLPbF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
www.vishay.com
1
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
for 10 s
6-32 or M3 screw
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T
C
= 25 °C
Energy
b
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
250
± 20
14
9.9
56
1.0
180
e
8.4
15
150
7.9
- 55 to + 175
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 5.0 µH, R
G
= 25
Ω,
I
AS
= 8.4 A (see fig. 12).
c. I
SD
≤
8.4 A, dI/dt
≤
378 A/µs, V
DD
≤
V
DS
, T
J
≤
175 °C.
d. 1.6 mm from case.
e. This is a calculated value limited to T
J
= 175 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
c
Case-to-Sink, Flat, Greased Surface
c
Maximum Junction-to-Case (Drain)
Maximum Junction-to-Ambient (PCB Mount)
d
SYMBOL
R
thJA
R
thCS
R
thJC
R
thJA
TYP.
-
0.50
-
-
MAX.
62
-
1.0
40
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 8.4 A
b
V
DS
= 50 V, I
D
= 8.4 A
b
250
-
2.0
-
-
-
-
8.8
-
0.33
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.240
-
V
V/°C
V
nA
µA
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
www.vishay.com
2
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
1060
140
38
-
-
-
10
21
30
17
4.5
7.5
-
-
-
54
9.2
26
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 8.4 A, V
DS
= 200 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 125 V, I
D
= 8.4 A,
R
G
= 6.2
Ω,
V
GS
= 10 V, see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
165
1.0
14
A
56
1.3
250
1.6
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 14 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. This is only applied to TO-220 package.
d. When mounted on 1" square PCB (fr-4 or G-10 material).
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
2
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
V
GS
Top
15
V
10
V
8.0 V
7.0
V
6.0
V
10
5.5
V
5.0
V
Bottom 4.5
V
4.5
V
1
10
2
10
V
GS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
Top
4.5
V
1
0.1
0.1
91038_01
20
µs
Pulse
Width
T
C
=
25 °C
1
10
10
2
0.1
0.1
91038_02
20
µs
Pulse
Width
T
C
=
175 °C
1
10
10
2
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
DS,
Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
www.vishay.com
3
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
10
2
10
4
T
J
= 175
°
C
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
10
C, Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
3
10
2
C
oss
C
rss
10
1
10
10
2
1
4
91038_03
20
µs
Pulse
Width
V
DS
=
50
V
6
8
10
12
14
16
91038_05
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
V
DS,
Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
, Gate-to-Source
Voltage
(V)
I
D
= 14 A
V
GS
= 10
V
20
I
D
=
8.4
A
V
DS
= 200
V
V
DS
= 125
V
16
12
V
DS
= 50
V
8
4
0.0
- 60 - 40 - 20 0 20 40 60
80
100 120 140 160 180
0
0
91038_06
12
24
36
48
60
91038_04
T
J,
Junction Temperature (°C)
Q
G
, Total Gate Charge (nC)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
10
2
15
I
SD
, Reverse Drain Current (A)
10
T
J
= 175
°
C
I
D
, Drain Current (A)
12
9
1
T
J
= 25
°
C
6
3
V
GS
= 0
V
0
0.4
0.8
1.2
1.6
91038_09
0.1
0.0
91038_07
25
50
75
100
125
150
175
V
SD
, Source-to-Drain
Voltage
(V)
T
C
, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
V
DS
V
GS
10
3
R
G
Operation in this area limited
by
R
DS(on)
10
V
10
2
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
D.U.T.
+
-
V
DD
I
D
, Drain-to-Source Current (A)
10
Fig. 10a - Switching Time Test Circuit
100
µs
1
ms
T
C
= 25
°C
T
J
= 175
°C
Single Pulse
1
10
10
2
V
DS
90
%
10
ms
10
3
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
1
0.1
91038_08
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 10b - Switching Time Waveforms
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
www.vishay.com
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