SMG2361P
Elektronische Bauelemente
-3.4A , -60V , R
DS(ON)
210 mΩ
Ω
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
A
L
3
SC-59
3
Top View
C B
1
2
2
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board space.
Fast switching speed.
High performance trench technology.
1
K
E
D
F
G
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
J
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
I
DM
I
S
P
D
I
D
Rating
-60
±20
-3.4
Unit
V
V
A
-2.6
-20
-1.6
1.3
W
0.8
T
J
, T
STG
-55~150
°
C
A
A
Continuous Source Current (Diode Conduction)
Power Dissipation
1
T
A
=25°
C
T
A
=70°
C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t
≦
10 sec
Steady-State
R
θJA
100
166
° /W
C
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 1 of 4
SMG2361P
Elektronische Bauelemente
-3.4A , -60V , R
DS(ON)
210 mΩ
Ω
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Typ
Max
Unit
Test Condition
V
GS(th)
I
GSS
I
DSS
-1
-
-
-
-
-
-
-
-
-
-
10
-0.83
2
-
±100
-1
V
nA
µA
V
DS
=V
GS
, I
D
= -250µA
V
DS
=0, V
GS
= ±20V
V
DS
= -48V, V
GS
=0
V
DS
= -48V, V
GS
=0, T
J
=55°
C
-10
-
210
m
250
-
-
S
V
A
I
D(ON)
1
-8
-
V
DS
= -5V, V
GS
= -10V
V
GS
= -10V, I
D
= -2.7A
V
GS
= -4.5V, I
D
= -2.2A
V
DS
= -15V,
,
I
D
= -2.7A
I
S
= -0.8A, V
GS
=0
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
R
DS(ON)
-
g
FS
V
SD
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
Td
(ON)
T
r
Td
(OFF)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
5
2.2
2.3
7
5
23
6
371
31
26
-
-
-
-
-
nS
-
-
-
-
-
pF
nC
I
D
= -2.7A
V
DS
= -30V
V
GS
= -4.5V
I
D
= -2.7A,
V
DS
= -30V,
V
GEN
= -10V,
R
GEN
=6
R
L
=11.2
V
DS
= -15V
V
GS
=0
f=1MHz
Notes:
1.
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 2 of 4
SMG2361P
Elektronische Bauelemente
-3.4A , -60V , R
DS(ON)
210 mΩ
Ω
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 3 of 4
SMG2361P
Elektronische Bauelemente
-3.4A , -60V , R
DS(ON)
210 mΩ
Ω
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 4 of 4
