STD16N65M5
Datasheet
N-channel 650 V, 0.230 Ω typ., 12 A MDmesh™ M5 Power MOSFET
in a DPAK package
Features
TAB
2 3
1
Order codes
STD16N65M5
V
DS
at T
jmax.
710 V
R
DS(on)
max.
0.279 Ω
I
D
12 A
•
•
•
•
Extremely low R
DS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
DPAK
D(2, TAB)
Applications
G(1)
•
Switching applications
Description
S(3)
AM01475v1_noZen
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative
vertical process technology combined with the well-known PowerMESH™ horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high power and superior efficiency.
Product status link
STD16N65M5
Product summary
Order code
Marking
Package
Packing
STD16N65M5
16N65M5
DPAK
Tape and reel
DS7011
-
Rev 3
-
November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STD16N65M5
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT
dv/dt
(2)
T
j
T
stg
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Operating junction temperature range
Storage temperature range
Parameter
Value
±25
12
7.3
48
90
15
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
1. Pulse width limited by safe operating area.
2. I
SD
≤ 12 A, di/dt ≤ 400 A/μs, V
DD
= 400 V, V
DS(peak)
< V
(BR)DSS
.
Table 2.
Thermal data
Symbol
R
thj-case
R
thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
Parameter
Value
1.38
50
Unit
°C/W
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Table 3.
Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or not-repetitive (pulse width limited by T
j
Max)
Single pulse avalanche energy (starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
4
200
Unit
A
mJ
DS7011
-
Rev 3
page 2/19
STD16N65M5
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source
breakdown voltage
Zero gate voltage drain
current
Gate body leakage
current
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 1 mA, V
GS
= 0 V
V
GS
= 0 V, V
DS
= 650 V,
V
GS
= 0 V, V
DS
= 650 V,
T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 6 A
3
4
0.230
Min.
650
1
100
100
5
0.279
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1. Defined by design, not subject to production test.
Table 5.
Dynamic
Symbol
C
iss
C
oss
C
rss
C
o(tr)
(1)
C
o(er)
Rg
Q
g
Q
gs
Q
gd
(2)
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent capacitance
time related
Equivalent capacitance
energy related
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
Typ.
1250
Max.
Unit
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
-
30
3
-
pF
-
V
DS
= 0 to 520 V, V
GS
= 0 V
-
f = 1 MHz open drain
V
DD
= 520 V, I
D
= 12 A, V
GS
= 0
to 10 V
(see
Figure 15. Test circuit for
gate charge behavior)
-
100
30
2
31
-
-
-
pF
pF
Ω
-
8
12
-
nC
1. C
o(tr)
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
2. C
o(er)
energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
DS7011
-
Rev 3
page 3/19
STD16N65M5
Electrical characteristics
Table 6.
Switching times
Symbol
t
d(v)
t
r(v)
t
f(i)
t
c(off)
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
V
DD
= 400 V, I
D
= 8 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 16. Test circuit for
inductive load switching and
diode recovery times
and
Figure 19. Switching time
waveform)
-
Min.
Typ.
25
7
6
8
-
ns
Max.
Unit
Table 7.
Source drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 12 A, V
GS
= 0 V
I
SD
= 12 A, di/dt = 100 A/µs
V
DD
= 100 V (see
Figure 16. Test
circuit for inductive load switching
and diode recovery times)
I
SD
= 12 A, di/dt = 100 A/µs
V
DD
= 100 V (see
Figure 16. Test
circuit for inductive load switching
and diode recovery times)
-
-
-
Test conditions
Min.
Typ.
Max.
12
48
1.5
300
3.5
23
350
4
24
A
Unit
-
V
ns
µC
A
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS7011
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Rev 3
page 4/19
STD16N65M5
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1.
Safe operating area
I
D
(A)
is
AM08609v1
Figure 2.
Thermal impedance
K
GC20460
O
Li p e r
m at
ite io
d ni
by n
m th is
ax a
R re a
D
S(
10
on
)
10µs
100µs
1ms
10ms
10
-1
10
0
1
0.1
Tj=150°C
Tc=25°C
S ingle puls e
0.01
0.1
1
10
100
V
DS
(V)
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Output characterisics
I
D
(A)
20
7V
15
6.5V
10
6V
5
5.5V
0
0
2
4
6
8 10 12 14 16 18
V
DS
(V)
0
3
5
10
15
AM03178v1
Figure 4.
Transfer characteristics
I
D
(A)
20
AM03179v1
V
GS
=10V
7.5V
V
DS
=10V
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm)
Figure 6.
Static drain-source on resistance
R
DS (on)
(Ω)
0.245
0.240
0.235
0.230
0.225
0.220
0.215
0.210
AM03181v1
AM03187v1
I
D
=1mA
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25
0
25
50
75 100
T
J
(°C)
V
GS
=10V
0
2
4
6
8
10
12 I
D
(A)
DS7011
-
Rev 3
page 5/19
传感器
