STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-channel 650V @ T
Jmax
- 0.4Ω - 11A TO-220/FP/D
2
PAK/I
2
PAK
MDmesh™ Power MOSFET
General features
Type
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
■
■
■
■
V
DSS
(@T
J
=T
Jmax
)
650V
650V
650V
650V
R
DS(on)
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
I
D
3
11A
11A
11A
11A
TO-220
1
2
3
1
2
TO-220FP
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
1
3
3
12
D
2
PAK
i
2
PAK
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB11NM60T4
STB11NM60-1
STP11NM60
STP11NM60FP
Marking
B11NM60
B11NM60-1
P11NM60
P11NM60FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
January 2007
Rev 6
1/16
www.st.com
16
Contents
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
GS
I
D
I
D
I
DM(2)
P
TOT
dv/dt
(3)
V
ISO
T
J
T
stg
Absolute maximum ratings
Value
Parameter
TO-220/D²PAK/I²PAK TO-220FP
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating Factor
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
--
-65 to 150
150
11
7
44
160
1.28
15
2500
±30
11
(1)
7
(1)
44
(1)
35
0.28
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Unit
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
I
SD
≤
11A, di/dt
≤
400A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
Table 2.
Symbol
R
thj-case
R
thj-a
T
l
Thermal data
Value
Parameter
TO-220/D²PAK/I²PAK
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
0.78
62.5
300
TO-220FP
3.57
°C/W
°C/W
°C
Unit
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
5.5
350
Unit
A
mJ
3/16
Electrical characteristics
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= 600 V
V
DS
= 600 V, Tc=125°C
V
GS
= ±30V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5.5A
3
4
0.4
Min.
600
1
10
±
100
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
5
0.45
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
C
oss eq
(2)
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Test conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 5.5A
Min.
Typ.
5.2
1000
230
25
100
Max.
Unit
S
pF
pF
pF
pF
V
DS
=25V, f=1 MHz, V
GS
=0
V
GS
=0, V
DS
=0V to 480V
f=1 MHz gate DC bias = 0
Test signal level = 20mV
open drain
V
DD
=480V, I
D
= 11A
V
GS
=10V
(see Figure 15)
R
G
Q
g
Q
gs
Q
gd
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
1.6
30
10
15
Ω
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
inceases from 0 to 80% V
DSS
4/16
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
t
r(Voff)
t
f
t
c
Switching times
Parameter
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V
DD
=300 V, I
D
=5.5A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 17)
V
DD
=480V, I
D
=11A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 17)
Min.
Typ.
20
20
6
11
19
Max.
Unit
ns
ns
ns
ns
ns
Table 7.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=11A, V
GS
=0
I
SD
=11A,
di/dt = 100A/µs,
V
DD
=100V, Tj=25°C
(see Figure 16)
I
SD
=11A,
di/dt = 100A/µs,
V
DD
=100V, Tj=150°C
(see Figure 16)
390
3.8
19.5
Test conditions
Min
Typ.
Max
11
44
1.5
Unit
A
A
V
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
570
5.7
20
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/16
