TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPCA8103
0.5±0.1
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
6.0±0.3
Unit: mm
1.27
8
0.4±0.1
5
0.05 M A
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 3.1 mΩ (typ.)
High forward transfer admittance: |Y
fs
| =45S (typ.)
Low leakage current: I
DSS
=
−10
µA (max) (V
DS
=
−30
V)
Enhancement mode: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
5.0±0.2
0.15±0.05
1
0.95±0.05
4
0.595
A
5.0±0.2
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
(Tc=25°C) (Note 4)
Channel temperature
Storage temperature range
E
AR
T
ch
T
stg
Rating
−30
−30
±20
−
40
−120
45
2.8
Unit
V
V
V
A
W
W
S
1
4
0.6±0.1
4.25±0.2
8
1,2,3：SOURCE
4：GATE
5,6,7,8：DRAIN
5 0.8±0.1
Pulsed (Note 1)
(Tc=25°C)
(t
=
10 s)
(Note 2a)
(t
=
10 s)
(Note 2b)
JEDEC
JEITA
TOSHIBA
―
―
2-5Q1A
Drain power dissipation
Drain power dissipation
Drain power dissipation
Weight: 0.076 g (typ.)
1.6
W
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
208
−
40
4.5
150
−55
to 150
mJ
A
mJ
°C
°C
Circuit Configuration
8
7
6
5
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2
3
3.5±0.2
1.1±0.2
0.05 S
0.166±0.05
4
1
2004-01-16
TPCA8103
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
(Tc=25°C)
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2a)
Symbol
R
th (ch-c)
Max
2.78
Unit
°C/W
R
th (ch-a)
44.6
°C/W
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2b)
R
th (ch-a)
78.1
°C/W
Marking
(Note 5)
TPCA
8103
※
Type
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
(a)
(b)
Note 3: V
DD
=
24 V， T
ch
=
25°C (initial)， L
=
100µH， R
G
=
25
Ω，
I
AR
= −
40 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
○
on lower left of the marking indicates Pin 1.
※
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
2
2004-01-16
TPCA8103
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-ON time
Switching time
Fall time
t
f
t
off
Q
g
Q
gs1
Q
gd
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
0V
V
GS
−
10 V
I
D
= −
20A
V
OUT
V
DS
= −
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±
16 V, V
DS
=
0 V
V
DS
= −
30 V, V
GS
=
0 V
I
D
= −
10 mA, V
GS
=
0 V
I
D
= −
10 mA, V
GS
=
20 V
V
DS
= −
10 V, I
D
= −
1 mA
V
GS
= −
4 V, I
D
= −
20 A
V
GS
= −
10 V, I
D
= −
20 A
V
DS
= −
10 V, I
D
= −
20 A
Min
Typ.
Max
Unit
⎯
⎯
−
30
−
13
−
0.8
⎯
⎯
22.5
⎯
⎯
⎯
⎯
⎯
5.2
3.1
45
7880
1340
1450
15
13
251
±
10
−
10
⎯
⎯
−
2.0
6.8
4.2
µ
A
µ
A
V
V
m
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DD
∼
−
24 V, V
GS
= −
10 V,
−
I
D
= −
40 A
pF
R
L
=
0.8
Ω
4.7
Ω
ns
⎯
⎯
⎯
⎯
⎯
nC
V
DD
∼
−
15 V
−
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Duty
<
1%, t
w
=
10
µ
s
=
596
184
12
58
⎯
⎯
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
I
DRP
V
DSF
Test Condition
Min
Typ.
Max
Unit
A
V
⎯
I
DR
= −
40 A, V
GS
=
0 V
⎯
⎯
⎯
⎯
−
120
1.2
3
2004-01-16
TPCA8103
I
D
– V
DS
−50
−4
−100
−3
−2.8
−10
−6
−30
−2.6
−8
−80
−8
−10
I
D
– V
DS
Common source
Ta
=
25°C
Pulse test
−4
−3.2
−3.1
−3.0
−40
−2.8
−20
VGS
= −2
V
−40
−6
I
D
I
D
Drain current
Common source
Ta
=
25°C
Pulse test
−2.4
(A)
(A)
−60
Drain current
−20
−2.2
−10
−2.6
VGS
= −2.4
V
−0.2
−0.4
−0.6
−0.8
−1.0
0
0
−1
−2
−3
−4
−5
0
0
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
GS
−100
Common source
VDS
= −10
V
Pulse test
Ta
= −55°C
−60
25
100
−0.5
V
DS
– V
GS
Common source
Ta
=
25°C
Pulse test
−80
(V)
V
DS
Drain-source voltage
−0.4
I
D
(A)
−0.3
Drain current
−40
−0.2
−10
−0.1
−20
ID
= −40
A
−20
0
0
−2
−4
−6
−8
−10
0
0
−4
−8
−12
−16
−20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y
fs
| – I
D
(S)
100
100
R
DS (ON)
– I
D
Forward transfer admittance
⎪Y
fs
⎪
100
10
25
Drain-source ON resistance
R
DS (ON)
(mΩ)
Ta
= −55°C
10
VGS
= −4
V
−10
1
1
0.1
−0.1
Common source
VDS
= −10
V
Pulse test
−1
−10
−100
0.1
−0.1
Common source
Ta
=
25°C
Pulse test
−1
−10
−100
Drain current
I
D
(A)
Drain current
I
D
(A)
4
2004-01-16
TPCA8103
R
DS (ON)
– Ta
20
Common source
Pulse test
−1000
I
DR
– V
DS
Drain reverse current I
DR
(A)
Drain-source ON resistance
R
DS (ON)
(mΩ)
15
−100
−10
−5
−3
10
ID
= −40
A,
−20
A,
−10
A
−10
−1
VGS
=
0 V
5
VGS
= −4
V
ID
= −40
A,
−20
A,
−10
A
0
40
80
120
160
−1
Common source
Ta
=
25°C
Pulse test
−0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
−10
V
0
−80
−40
Ambient temperature
Ta
(°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
100000
−2.0
V
th
– Ta
Common source
VDS
= −10
V
−1.6
ID
= −1
mA
Pulse test
10000
Ciss
C
Gate threshold voltage
−100
V
th
(V)
(pF)
−1.2
Capacitance
Coss
1000
Common source
VGS
=
0 V
f
=
1 MHz
Ta
=
25°C
100
−0.1
−1
−10
Crss
−0.8
−0.4
Drain-source voltage
V
DS
(V)
0
−80
−40
0
40
80
120
160
Ambient temperature
Ta
(°C)
Dynamic input/output characteristics
−30
Common source
VDD
= −24
V
VDS
−20
ID
= −13
A
Ta
=
25°C
Pulse test
−20
−30
(V)
Drain-source voltage
−12
−10
−6
−6
−12
−10
VDD
= −24
V
VGS
0
0
40
80
120
160
200
0
240
Total gate charge Q
g
(nC)
Gate-source voltage
V
GS
(V)
V
DS
5
2004-01-16
