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WS512K8-35CIA

SRAM Module, 512KX8, 35ns, CMOS, 0.600 INCH, CERAMIC, DIP-32

器件类别：存储    存储   

厂商名称：Mercury Systems Inc

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Mercury Systems Inc
包装说明
,
Reach Compliance Code
unknown
ECCN代码
3A991.B.2.A
最长访问时间
35 ns
JESD-30 代码
R-XDMA-T32
JESD-609代码
e0
内存密度
4194304 bit
内存集成电路类型
SRAM MODULE
内存宽度
8
功能数量
1
端子数量
32
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
512KX8
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
并行/串行
PARALLEL
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
NO
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
THROUGH-HOLE
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
WS512K8-XCX
512Kx8 SRAM MODULE, SMD 5962-92078
FEATURES

Access Times 20, 25, 35, 45ns

Standard Microcircuit Drawing, 5962-92078

MIL-STD-883 Compliant Devices Available

JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300)

Commercial, Industrial and Military Temperature Range (-55°C to +125°C)

Organized as 512K x 8

5V Power Supply

Low Power CMOS

TTL Compatible Inputs and Outputs

Battery Back-Up Operation
FIGURE 1 – PIN CONFIGURATION
TOP VIEW
A0-18
I/O 0-7
CS#
OE#
WE#
V
CC
GND
PIN DESCRIPTION
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
BLOCK DIAGRAM
A0-16
I/O0-7
WE#
OE#
128K x 8
128K x 8
128K x 8
128K x 8
A17
A18
CS#
Decoder
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 7
© 2014 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WS512K8-XCX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
V
CC
+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS#
H
L
L
L
OE#
X
L
X
H
TRUTH TABLE
WE#
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
CAPACITANCE
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.5
-55
Max
5.5
V
CC
+ 0.3
+0.8
+125
Unit
V
V
V
°C
Parameter
Input capacitance
Output capicitance
Symbol
C
IN
C
OUT
(T
A
= +25°C)
Condition
V
IN
= 0V, f = 1.0MH
Z
V
OUT
= 0V, f = 1.0MH
Z
Max
45
45
Unit
pF
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Symbol
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MH
Z
, V
CC
= 5.5
CS# = V
IH
, OE# = V
IH
, f = 5MH
Z
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
-20
Min
Max
10
10
210
80
0.4
Min
-25
Max
10
10
210
60
0.4
Min
-35
Max
10
10
210
60
0.4
Min
-45
Max
10
10
210
55
0.4
Units
μA
μA
mA
mA
V
V
2.4
2.4
2.4
2.4
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
(-55°C
≤
TA
≤
125°C)
Parameter
Data Retention Supply Voltage
Data Retention Current
Symbol
V
DR
I
CCDR
1
Conditions
CS# • V
CC
-0.2V
V
CC
= 3V
Min
2.0
-20
Typ
8.0
Max
5.5
12.8
Min
2.0
-25
Typ
8.0
Max
5.5
12.8
Min
2.0
-35
Typ
8.0
Max
5.5
12.8
Min
2.0
-45
Typ
8.0
Max
5.5
12.8
Units
V
mA
FIGURE 2 – AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
Current
ource
. . .
C
50 p
1.5
( ipolar
uppl )
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Current
ource
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 7
© 2014 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WS512K8-XCX
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, -55°C
≤
T
A
≤
125°C)
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
-20
Min
20
20
3
20
10
3
0
15
12
3
0
3
Max
Min
25
-25
Max
25
3
25
10
3
0
17
15
Min
35
-35
Max
35
3
35
25
3
0
20
20
Min
45
-45
Max
45
45
35
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
30
25
AC CHARACTERISTICS
(V
CC
= 5.0V, GND =0V, -55°C
≤
T
A
≤
125°C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
1. This parameter is guaranteed by design but not tested.
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
-20
Min
20
16
16
15
16
2
2
4
10
1
Max
Min
25
20
20
15
20
2
2
5
0
1
-25
Max
Min
35
25
25
20
25
2
2
5
0
1
-35
Max
Min
45
30
30
25
30
2
2
5
0
1
-45
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
15
20
25
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 7
© 2014 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WS512K8-XCX
FIGURE 3 – TIMING WAVEFORM – READ CYCLE
t
RC
ADDRESS
t
RC
ADDRESS
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
OE#
t
OE
t
OLZ
READ CYCLE 1 (CS# = OE# = V
IL
, WE# = V
IH
)
DATA I/O
HIGH IMPEDANCE
READ CYCLE 2 (WE# = V
IH
)
DATA VALID
t
OHZ
CS#
t
ACS
t
CLZ
t
CHZ
t
AA
FIGURE 4 – WRITE CYCLE – WE# CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
CS#
t
AS
WE#
t
WHZ
DATA I/O
t
DW
t
WP
t
OW
t
DH
t
AH
DATA VALID
WRITE CYCLE 1, WE# CONTROLLED
FIGURE 5 – WRITE CYCLE – CS# CONTROLLED
t
WC
ADDRESS
t
AW
t
AS
CS#
t
CW
t
AH
t
WP
WE#
t
DW
DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
t
DH
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 7
© 2014 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WS512K8-XCX
PACKAGE 300 – 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) ± 0.4 (0.016)
15.04 (0.592)
± 0.25 (0.012)
4.34 (0.171) ± 0.79 (0.031)
PIN 1 IDENTIFIER
3.2 (0.125) MIN
0.84 (0.033)
± 0.4 (0.014)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
0.25 (0.010)
± 0.05 (0.002)
15.25 (0.600)
± 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 7
© 2014 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
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参数对比
与WS512K8-35CIA相近的元器件有：WS512K8-20CMA、WS512K8-20CIA、WS512K8-25CMA、WS512K8-45CMA、WS512K8-35CMA、WS512K8-25CIA、WS512K8-45CIA。描述及对比如下：
型号 WS512K8-35CIA WS512K8-20CMA WS512K8-20CIA WS512K8-25CMA WS512K8-45CMA WS512K8-35CMA WS512K8-25CIA WS512K8-45CIA
描述 SRAM Module, 512KX8, 35ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 SRAM Module, 512KX8, 20ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 SRAM Module, 512KX8, 20ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 SRAM Module, 512KX8, 25ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 SRAM Module, 512KX8, 45ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 SRAM Module, 512KX8, 35ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 SRAM Module, 512KX8, 25ns, CMOS, 0.600 INCH, CERAMIC, DIP-32 SRAM Module, 512KX8, 45ns, CMOS, 0.600 INCH, CERAMIC, DIP-32
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 3A991.B.2.A 3A001.A.2.C 3A991.B.2.A 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A991.B.2.A 3A991.B.2.A
最长访问时间 35 ns 20 ns 20 ns 25 ns 45 ns 35 ns 25 ns 45 ns
JESD-30 代码 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE SRAM MODULE
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32 32
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 125 °C 85 °C 125 °C 125 °C 125 °C 85 °C 85 °C
最低工作温度 -40 °C -55 °C -40 °C -55 °C -55 °C -55 °C -40 °C -40 °C
组织 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO NO NO NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL MILITARY INDUSTRIAL MILITARY MILITARY MILITARY INDUSTRIAL INDUSTRIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Mercury Systems Inc - - Mercury Systems Inc Mercury Systems Inc Mercury Systems Inc Mercury Systems Inc Mercury Systems Inc
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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