ZXTN2040F
SOT23 40 volt NPN silicon planar medium power
transistor
Summary
V
(BR)CEO
> 40V
I
c(cont)
= 1A
V
ce(sat)
< 500mV @ 1A
Complementary type
ZXTP2041F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
■
Low saturation voltage for reduced power dissipation
■
1 to 2 amp high current capability
■
Pb-free
■
SOT23 package
Applications
■
Power MOSFET gate driving
■
Low loss power switching
Ordering information
Device
ZXTN2040FTA
ZXTN2040FTC
Reel size
7”
13”
Tape width
8mm
8mm
Quantity per reel
3,000
10,000
Pin out - top view
Device marking
N40
Issue 2 - August 2005
© Zetex Semiconductors plc 2005
1
www.zetex.com
ZXTN2040F
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
*
Peak base current
Power dissipation @ T
A
=25°C
*
Operating and storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
BM
P
D
T
j
:T
stg
Limit
40
40
5.0
2
1
1
350
-55 to +150
Unit
V
V
V
A
A
A
mW
°C
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
Issue 2 - August 2005
© Zetex Semiconductors plc 2005
2
www.zetex.com
ZXTN2040F
Electrical characteristics (@T
AMB
= 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
I
EBO
h
FE
300
300
200
35
Collector-emitter saturation
voltage
V
CE(sat)
0.2
0.3
0.5
Base-emitter saturation voltage
Base-emitter turn-on voltage
Transition frequency
Output capacitance
V
BE(sat)
V
BE(on)
f
T
C
obo
150
10
pF
1.1
1.0
V
V
V
V
V
900
Min.
40
40
5
100
100
100
Max.
Unit
V
V
V
nA
nA
nA
Conditions
I
C
=100 A
I
C
=10mA
*
I
E
=100 A
V
CE
=30V
V
CB
=30V
V
EB
=4V
I
C
=1mA, V
CE
=5V
*
I
C
=500mA, V
CE
=5V
*
I
C
=1A, V
CE
=5V
*
I
C
=2A, V
CE
=5V
*
I
C
=100mA, I
B
=1mA
*
I
C
=500mA, I
B
=50mA
*
I
C
=1A, I
B
=100mA
*
I
C
=1A, I
B
=100mA
*
I
C
=1A, V
CE
=5V
*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
NOTES:
* Measured under pulsed conditions. Pulse width=300 S. Duty cycle
Spice parameter data is available upon request for this device
2%
Issue 2 - August 2005
© Zetex Semiconductors plc 2005
3
www.zetex.com
ZXTN2040F
Typical characteristics
0.5
0.4
0.5
I
C
/I
B
=10
+25 ° C
0.4
V
CE(sat)
-(V)
V
CE(sat)
-(V)
0.3
0.2
0.1
0
1mA
10mA
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=100
0.3
0.2
0.1
0
-55 °C
+25 °C
+100 °C
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
V
CE(sat)
v I
C
1000
V
CE
=5V
V
CE(sat)
v I
C
1.4
1.2
I
C
/I
B
=10
-55 °C
+25 °C
+100 °C
h
FE
- Typical Gain
+100 °C
V
BE(sat)
- (V)
10mA
100mA
1A
10A
800
600
+25 °C
1.0
0.8
0.6
0.4
0.2
0
400
-55 °C
200
0
1mA
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
h
FE
V I
C
I
C
-Collector Current (A)
V
CE
=5V
V
BE(sat)
v I
C
10
1.0
1
V
BE(on)
- (V)
0.8
-55 °C
0.6
+25 °C
0.1
0.4
+100 °C
0.01
DC
1s
100ms
10ms
1ms
100us
0.2
0
1mA
10mA
100mA
1A
10A
0.001
0.1V
1V
10V
100V
I
C
-Collector Current
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
Issue 2 - August 2005
© Zetex Semiconductors plc 2005
4
www.zetex.com
ZXTN2040F
Packaging details - SOT23
L
H
N
D
3 leads
G
M
B
A
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim.
Millimeters
Min.
A
B
C
D
F
G
2.67
1.20
-
0.37
0.085
Max.
3.05
1.40
1.10
0.53
0.15
Inches
Min.
0.105
0.047
-
0.015
0.0034
Max.
0.120
0.055
0.043
0.021
0.0059
H
K
L
M
N
-
Dim.
Millimeters
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Inches
Max.
0.013
0.0004
0.083
0.018
Max.
0.020
0.004
0.0985
0.025
0.95 Nom.
-
-
0.0375 Nom.
-
-
1.90 Nom.
0.075 Nom.
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 2 - August 2005
© Zetex Semiconductors plc 2005
5
www.zetex.com
