International Rectifier （ Infineon ）
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A)
ISC
N-Channel MOSFET Transistor
Infineon(英飞凌)
Single Board Computers BL2600 Wolf
International Rectifier （ Infineon ）
90 A, 200 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
IR
漏源电压（Vdss）：200V 连续漏极电流（Id）（25°C 时）：94A 栅源极阈值电压：5V @ 250uA 漏源导通电阻：23mΩ @ 56A,10V 最大功率耗散（Ta=25°C）：580W 类型：N沟道 N沟道,200V,94A,23mΩ@10V
International Rectifier （ Infineon ）
High frequency DC-DC converters
Thomson Consumer Electronics
Transistor
ISC
isc N-Channel MOSFET Transistor
ISC
isc N-Channel MOSFET Transistor
ISC
isc N-Channel MOSFET Transistor
ISC
isc N-Channel MOSFET Transistor
SAMSUNG(三星)
12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
ISC
isc N-Channel MOSFET Transistor
SAMSUNG(三星)
12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
ISC
isc N-Channel MOSFET Transistor
SAMSUNG(三星)
12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
ISC
isc N-Channel MOSFET Transistor
SAMSUNG(三星)
12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
ISC
isc N-Channel MOSFET Transistor
SAMSUNG(三星)
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
Intersil ( Renesas )
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
Vishay(威世)
MOSFET P-Chan 100V 21 Amp
Rochester Electronics
19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
Fairchild
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Thomson Consumer Electronics
Transistor
Harris
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 21A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Renesas(瑞萨电子)
19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
Infineon(英飞凌)
MOSFET P-CH 100V 23A TO-247AC
International Rectifier （ Infineon ）
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
