Vishay(威世)
MOSFET N-Chan 200V 2.6 Amp
International Rectifier （ Infineon ）
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
Kersemi Electronic
2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
SAMSUNG(三星)
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
SAMSUNG(三星)
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Fairchild
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Fairchild
200V N-Channel MOSFET
Fairchild
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3
ON Semiconductor(安森美)
MOSFET 200V N-Ch B-FET
Fairchild
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Fairchild
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
International Rectifier （ Infineon ）
2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Vishay(威世)
漏源电压（Vdss）：200V 连续漏极电流（Id）（25°C 时）：2.6A 栅源极阈值电压：4V @ 250uA 漏源导通电阻：1.5Ω @ 1.6A,10V 最大功率耗散（Ta=25°C）：2.5W 类型：N沟道
Kersemi Electronic
2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
