ETC2
SEMICONDUCTORS
Intersil ( Renesas )
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Fairchild
5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
SAMSUNG(三星)
5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
New Jersey Semiconductor
5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Rochester Electronics
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Infineon(英飞凌)
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
General Electric Solid State
Transistor
Harris
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Renesas(瑞萨电子)
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Thomson Consumer Electronics
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FCI / Amphenol
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
ISC
High Speed Applications
Fairchild
5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
International Rectifier （ Infineon ）
AUTOMOTIVE MOSFET
ISC
N-Channel MOSFET Transistor
International Rectifier （ Infineon ）
AUTOMOTIVE MOSFET
International Rectifier （ Infineon ）
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Infineon(英飞凌)
MOSFET MOSFT 40V 170A 3.6mOhm 130nC
Infineon(英飞凌)
漏源电压（Vdss）：40V 连续漏极电流（Id）（25°C 时）：210A(Tc) 栅源极阈值电压：4V @ 250uA 漏源导通电阻：3.6mΩ @ 130A,10V 最大功率耗散（Ta=25°C）：330W(Tc) 类型：N沟道
International Rectifier （ Infineon ）
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
International Rectifier （ Infineon ）
Advanced Process Technology
International Rectifier （ Infineon ）
AUTOMOTIVE MOSFET
Inchange Semiconductor
MOSFETs;120A;40V;D²PAK/TO-263
ISC
isc N-Channel MOSFET Transistor
International Rectifier （ Infineon ）
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Infineon(英飞凌)
MOSFET MOSFT 40V 170A 3.6mOhm 130nC
International Rectifier （ Infineon ）
Advanced Process Technology
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
International Rectifier （ Infineon ）
Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
