IPB60R070CFD7
MOSFET
600VCoolMOSªCFD7PowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe
successortotheCoolMOS™CFD2seriesandisanoptimizedplatform
tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge
(ZVS)andLLC.Resultingfromreducedgatecharge(Q
g
),best-in-class
reverserecoverycharge(Q
rr
)andimprovedturnoffbehaviorCoolMOS™
CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s
fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof
afastswitchingtechnologytogetherwithsuperiorhardcommutation
robustness,withoutsacrificingeasyimplementationinthedesign-in
process.TheCoolMOS™CFD7technologymeetshighestefficiencyand
reliabilitystandardsandfurthermoresupportshighpowerdensity
solutions.Altogether,CoolMOS™CFD7makesresonantswitching
topologiesmoreefficient,morereliable,lighterandcooler.
D²PAK
tab
2
1
3
Drain
Pin 2, Tab
Features
•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Q
rr
)
•ImprovedMOSFETreversediodedv/dtanddi
F
/dtruggedness
•LowestFOMR
DS(on)
*Q
g
andR
DS(on)
*E
oss
•Best-in-classR
DS(on)
inSMDandTHDpackages
Gate
Pin 1
Source
Pin 3
Benefits
•Excellenthardcommutationruggedness
•Highestreliabilityforresonanttopologies
•Highestefficiencywithoutstandingease-of-use/performancetradeoff
•Enablingincreasedpowerdensitysolutions
Potentialapplications
SuiteableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g,typ
I
D,pulse
E
oss
@ 400V
Body diode di
F
/dt
Type/OrderingCode
IPB60R070CFD7
Final Data Sheet
Value
650
70
67
129
7.7
1300
Package
PG-TO 263-3
1
Unit
V
mΩ
nC
A
µJ
A/µs
Marking
60R070F7
RelatedLinks
see Appendix A
Rev.2.0,2019-05-17
600VCoolMOSªCFD7PowerTransistor
IPB60R070CFD7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.0,2019-05-17
600VCoolMOSªCFD7PowerTransistor
IPB60R070CFD7
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
1)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Mounting torque
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maximum diode commutation speed
Insulation withstand voltage
Symbol
I
D
I
D,pulse
E
AS
E
AR
I
AS
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
-
I
S
I
S,pulse
dv/dt
di
F
/dt
V
ISO
Values
Min.
-
-
-
-
-
-
-
-20
-30
-
-55
-55
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
31
20
129
151
0.76
6.3
120
20
30
156
150
150
-
31
129
70
1300
n.a.
Unit
A
A
mJ
mJ
A
V/ns
V
V
W
°C
°C
A
A
V/ns
A/µs
V
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=6.3A; V
DD
=50V; see table 10
I
D
=6.3A; V
DD
=50V; see table 10
-
V
DS
=0...400V
static;
AC (f>1 Hz)
T
C
=25°C
-
-
T
C
=25°C
T
C
=25°C
V
DS
=0...400V,I
SD
<=31A,T
j
=25°C
see table 8
V
DS
=0...400V,I
SD
<=31A,T
j
=25°C
see table 8
V
rms
,T
C
=25°C,t=1min
Ncm -
1)
2)
Limited by T
j,max
.
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
Final Data Sheet
3
Rev.2.0,2019-05-17
600VCoolMOSªCFD7PowerTransistor
IPB60R070CFD7
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
-
Typ.
-
-
Max.
0.8
62
Unit
Note/TestCondition
°C/W -
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
°C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
°C
reflow MSL1
Thermal resistance, junction - ambient
R
thJA
Thermal resistance, junction - ambient
R
thJA
for SMD version
-
35
45
Soldering temperature, wavesoldering
only allowed at leads
T
sold
-
-
260
Final Data Sheet
4
Rev.2.0,2019-05-17
600VCoolMOSªCFD7PowerTransistor
IPB60R070CFD7
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
1)
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Symbol
V
(BR)DSS
V
(GS)th
I
DSS
I
GSS
R
DS(on)
R
G
Values
Min.
600
3.5
-
-
-
-
-
-
Typ.
-
4
-
15
-
0.057
0.129
5.9
Max.
-
4.5
1
63
100
0.070
-
-
Unit
V
V
µA
nA
Ω
Ω
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=0.76mA
V
DS
=600V,V
GS
=0V,T
j
=25°C
V
DS
=600V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=15.1A,T
j
=25°C
V
GS
=10V,I
D
=15.1A,T
j
=150°C
f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
Effective output capacitance, energy
related
2)
Effective output capacitance, time
related
3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
-
Typ.
2721
53
96
990
26
23
99
6
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=400V,f=250kHz
V
GS
=0V,V
DS
=400V,f=250kHz
V
GS
=0V,V
DS
=0...400V
I
D
=constant,V
GS
=0V,V
DS
=0...400V
V
DD
=400V,V
GS
=10V,I
D
=11.0A,
R
G
=5.3Ω;seetable9
V
DD
=400V,V
GS
=10V,I
D
=11.0A,
R
G
=5.3Ω;seetable9
V
DD
=400V,V
GS
=10V,I
D
=11.0A,
R
G
=5.3Ω;seetable9
V
DD
=400V,V
GS
=10V,I
D
=11.0A,
R
G
=5.3Ω;seetable9
Table6Gatechargecharacteristics
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min.
-
-
-
-
Typ.
15
23
67
5.5
Max.
-
-
-
-
Unit
nC
nC
nC
V
Note/TestCondition
V
DD
=400V,I
D
=11.0A,V
GS
=0to10V
V
DD
=400V,I
D
=11.0A,V
GS
=0to10V
V
DD
=400V,I
D
=11.0A,V
GS
=0to10V
V
DD
=400V,I
D
=11.0A,V
GS
=0to10V
1)
2)
Maximum specification is defined by calculated six sigma upper confidence bound
C
o(er)
isafixedcapacitancethatgivesthesamestoredenergyasC
oss
whileV
DS
isrisingfrom0to400V
3)
C
o(tr)
isafixedcapacitancethatgivesthesamechargingtimeasC
oss
whileV
DS
isrisingfrom0to400V
Final Data Sheet
5
Rev.2.0,2019-05-17
