IAUS300N08S5N011T
OptiMOS™-5 Power-Transistor
Product Summary
V
DS
R
DS(on)
80
1.1
300
PG-HDSOP-16-2
V
mW
A
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
I
D
Type
IAUS300N08S5N011T
Package
PG-HDSOP-16-2
Marking
5N08011
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
V
GS
=10 V, Chip
limitation
1,2)
V
GS
=10V, DC
current
3)
T
a
=85 °C,
V
GS
=10 V,
R
thJA
on 2s2p
2,4)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25 °C,
t
p
= 100
µ
s
I
D
=150 A
-
-
T
C
=25 °C
-
-
Value
400
300
123
1450
817
300
±20
375
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2020-10-01
IAUS300N08S5N011T
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Top
Bottom (Pin 1-7)
Bottom (Pin 9-16)
Top
R
thJA
Bottom (through PCB)
-
40
-
-
-
-
-
-
9
3
2.8
0.4
-
-
-
K/W
Thermal resistance, junction - case
R
thJC
Thermal resistance, junction -
ambient
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
GS
=0 V,
I
D
=1 mA
V
DS
=V
GS
,
I
D
=275 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=50 V,
V
GS
=0 V,
T
j
=85 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=6 V,
I
D
=75 A
V
GS
=10 V,
I
D
=100 A
Gate resistance
2)
R
G
-
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS(th)
I
DSS
80
2.2
-
-
3
0.1
-
3.8
1
V
µA
-
-
-
-
-
1
-
1.4
1.0
1.5
20
100
1.8
1.1
-
W
nA
mΩ
Rev. 1.0
page 2
2020-10-01
IAUS300N08S5N011T
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40 V,
V
GS
=10 V,
I
D
=100 A,
R
G
=3.5
W
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
-
-
-
-
-
-
12500
2000
86
31
19
69
55
16250 pF
2600
130
-
-
-
-
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=40 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
56
37
178
4.5
73
56
231
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
T
C
=25 °C,
t
p
= 100
µ
s
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
R
=40 V,
I
F
=50A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.9
86
177
300
2300
1.2
-
-
A
V
ns
nC
Practically the current is limited by the overall system design including the customer-specific PCB.
The parameter is not subject to production testing – specified by design.
Current is limited by the bondwires.
2)
3)
4)
Device on a four-layer 2s2p FR4 PCB with topside cooling. Thermal insulation material is 100
µm
thick and has a
conductivity of 0.7 W/mK. Top surface of heat sink is fixed at ambient temperature. Bottom surface of PCB is left at
free convection. Values may vary depending on the customer-specific design.
Rev. 1.0
page 3
2020-10-01
IAUS300N08S5N011T
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥ 6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥ 6 V
400
450
400
Chip limit
300
350
300
DC current
P
tot
[W]
200
I
D
[A]
0
50
100
150
200
250
200
150
100
100
50
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
10000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
0
1 µs
1000
10 µs
0.5
10
-1
100 µs
Z
thJC
[K/W]
I
D
[A]
0.1
100
1 ms
0.05
10
-2
0.01
10
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2020-10-01
IAUS300N08S5N011T
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
1200
10 V
7V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
4
4.5 V
5V
1000
3.5
3
800
6V
R
DS(on)
[mW]
2.5
I
D
[A]
600
5.5 V
2
5.5 V
400
1.5
5V
6V
7V
200
4.5 V
1
10 V
0
0
1
2
3
4
5
6
7
0.5
0
100
200
300
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
1400
25 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
)
parameter:
I
D
,
V
GS
2.5
1200
-55 °C
2.3
2.1
175 °C
1000
1.9
800
R
DS(on)
[mW]
1.7
1.5
1.3
1.1
0.9
V
GS
=6 V,
I
D
=75 A
I
D
[A]
600
V
GS
=10 V,
I
D
=100 A
400
200
0.7
0
2.5
3.5
4.5
5.5
6.5
7.5
0.5
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2020-10-01
