V
DS
1200 V
63 A
25 mΩ
C2M0025120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
N-Channel Enhancement Mode
Features
Package
I
D
@
25˚C
R
DS(on)
•
•
•
•
•
•
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
TO-247-3
Benefits
•
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
•
•
•
•
•
•
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC converters
Battery Chargers
Motor Drive
Pulsed Power Applications
Part Number
C2M0025120D
Package
TO-247-3
Marking
C2M0025120
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Mounting Torque
Value
1200
-10/+25
-5/+20
63
39
250
378
-55 to
+150
260
1
8.8
Unit
V
V
V
A
A
W
˚C
˚C
Nm
lbf-in
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
Note
V
DSmax
V
GSmax
V
GSop
I
D
I
D(pulse)
P
D
T
J
, T
stg
T
L
M
d
Absolute maximum values
Recommended operational values
V
GS
=20 V, T
C
= 25˚C
V
GS
=20 V, T
C
= 100˚C
Pulse width t
P
limited by T
jmax
T
C
=25˚C, T
J
= 150 ˚C
Fig. 19
Note 1
Fig. 22
Fig. 20
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
Note (1): Die limits are 90A (25°C) and 60A (100°C)
1
C2M0025120D Rev. 5, 04-2021
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
E
oss
E
ON
E
OFF
E
ON
E
OFF
t
d(on)
t
r
t
d(off)
t
f
R
G(int)
Q
gs
Q
gd
Q
g
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
Turn-On Switching Energy (Body Diode)
Turn Off Switching Energy (Body Diode)
Turn-On Switching Energy (External SiC Diode)
Turn Off Switching Energy (External SiC Diode)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Min.
1200
2.0
Typ.
2.6
2.3
2
25
41
24.6
24
3140
224
9
128
2.18
0.68
1.14
0.8
15
58
33
17
1.0
46
71.5
194
Max.
4
100
250
34
Unit
V
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
V
DS
= V
GS
, I
D
= 15mA
V
DS
= V
GS
, I
D
= 15mA, T
J
= 150 °C
V
DS
= 1200 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= 20 V, I
D
= 50 A
V
GS
= 20 V, I
D
= 50 A, T
J
= 150 °C
V
DS
= 20 V, I
DS
= 50 A
V
DS
= 20 V, I
DS
= 50 A, T
J
= 150 °C
V
GS
= 0 V
Note
V
V
μA
nA
mΩ
S
Fig. 11
Fig.
4,5,6
Fig. 7
pF
V
DS
= 1000 V
f = 1 MHz
V
AC
= 25 mV
V
DS
= 800 V, V
GS
= -5/20 V,
I
D
= 50A, R
G(ext)
= 2.5Ω,L= 99 μH
FWD = Internal Body Diode of MOSFET
V
DS
= 800 V, V
GS
= -5/20 V,
I
D
= 50A, R
G(ext)
= 2.5Ω,L= 99 μH
FWD = External SiC Diode
V
DD
= 800 V, V
GS
= -5/20 V
I
D
= 50 A,
R
G(ext)
= 2.5 Ω, Inductive Load
Timing relative to V
DS
Per IEC60747-8-4 pg 83
f = 1 MHz, V
AC
= 25 mV, ESR of C
ISS
V
DS
= 800 V, V
GS
= -5/20 V
I
D
= 50 A
Per IEC60747-8-4 pg 21
Fig.
17,18
μJ
mJ
Fig 16
Fig. 25
mJ
Fig. 25
ns
Fig. 27
Ω
nC
Fig. 12
2
C2M0025120D Rev. 5, 04-2021
Reverse Diode Characteristics
Symbol
V
SD
I
S
I
S, pulse
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Parameter
Diode Forward Voltage
Continuous Diode Forward Current
Diode Pulse Current
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.1
3.5
Max.
Unit
V
V
Test Conditions
V
GS
= - 5 V, I
SD
= 25 A
V
GS
= - 5 V, I
SD
= 25 A, T
J
= 150 °C
V
GS
= - 5 V, T
C
= 25 °C
V
GS
= - 5 V,
Pulse width t
P
limited by T
jmax
Note
Fig. 8, 9,
10
Note 2
63
250
33
487
24
67
386
15
ns
nC
A
ns
nC
A
V
GS
= - 5 V, I
SD
= 50 A ,T
J
= 25 °C
VR = 800 V
dif/dt = 2180 A/µs
Note 2
V
GS
= - 5 V, I
SD
= 50 A ,T
J
= 25 °C
VR = 800 V
dif/dt = 1320 A/µs
Note 2
Note (2): When using SiC Body Diode the maximum recommended V
GS
= -5V
Thermal Characteristics
Symbol
R
θJC
R
θJC
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Typ.
0.24
Max.
0.33
40
Unit
°C/W
Test Conditions
Note
Fig. 21
3
C2M0025120D Rev. 5, 04-2021
Typical Performance
150
120
Conditions:
T
j
= -55 °C
tp = < 200 µs
V
GS
= 18V
V
GS
= 20V
V
GS
= 16V
V
GS
= 14V
150
Drain-Source Current, I
DS
(A)
120
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 20V
V
GS
= 18V
V
GS
= 16V
V
GS
= 14V
Drain-Source Current, I
DS
(A)
V
GS
= 12V
90
V
GS
= 12V
90
60
V
GS
= 10V
60
V
GS
= 10V
30
30
0
0.0
2.5
5.0
7.5
10.0
0
0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 °C
150
Conditions:
T
j
= 150 °C
tp = < 200 µs
V
GS
= 20V
V
GS
= 18V
V
GS
= 16V
V
GS
= 14V
V
GS
= 12V
Figure 2. Output Characteristics T
J
= 25 °C
1.8
1.6
Conditions:
I
DS
= 50 A
V
GS
= 20 V
t
p
< 200 µs
120
Drain-Source Current, I
DS
(A)
On Resistance, R
DS On
(P.U.)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
90
V
GS
= 10V
60
30
0
0.0
0.0
2.5
5.0
7.5
10.0
-50
-25
0
Drain-Source Voltage, V
DS
(V)
Junction Temperature, T
j
(°C)
25
50
75
100
125
150
Figure 3. Output Characteristics T
J
= 150 °C
60
50
Conditions:
V
GS
= 20 V
t
p
< 200 µs
Figure 4. Normalized On-Resistance vs. Temperature
60
50
Conditions:
I
DS
= 50 A
t
p
< 200 µs
On Resistance, R
DS On
(mOhms)
On Resistance, R
DS On
(mOhms)
40
30
20
10
0
T
j
= 150 °C
40
30
20
10
0
V
GS
= 14 V
V
GS
= 16 V
V
GS
= 18 V
V
GS
= 20 V
T
j
= 25 °C
T
j
= -55 °C
0
20
40
Drain-Source Current, I
DS
(A)
60
80
100
120
140
160
-50
-25
0
Junction Temperature, T
j
(°C)
25
50
75
100
125
150
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
4
C2M0025120D Rev. 5, 04-2021
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Typical Performance
100
Conditions:
V
DS
= 20 V
tp < 200 µs
-8
-7
-6
-5
-4
-3
-2
-1
0
0
Drain-Source Current, I
DS
(A)
Drain-Source Current, I
DS
(A)
80
-30
V
GS
= -5 V
V
GS
= 0 V
60
T
J
= 150 °C
T
J
= 25 °C
T
J
= -55 °C
-60
V
GS
= -2 V
40
-90
20
0
0
2
4
6
8
10
12
14
Conditions:
T
j
= -55°C
t
p
< 200 µs
-120
Gate-Source Voltage, V
GS
(V)
Drain-Source Voltage V
DS
(V)
-150
Figure 7. Transfer Characteristic For
Various Junction Temperatures
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-8
Figure 8. Body Diode Characteristic at -55 ºC
-7
-6
-5
-4
-3
-2
-1
0
0
Drain-Source Current, I
DS
(A)
-30
V
GS
= -5 V
V
GS
= 0 V
Drain-Source Current, I
DS
(A)
-30
V
GS
= -5 V
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -2 V
-60
-60
-90
-90
Conditions:
T
j
= 25°C
t
p
< 200 µs
-120
Drain-Source Voltage V
DS
(V)
-150
Conditions:
T
j
= 150°C
t
p
< 200 µs
-120
Drain-Source Voltage V
DS
(V)
-150
Figure 9. Body Diode Characteristic at 25 ºC
4.0
3.5
3.0
Conditons
V
GS
= V
DS
I
DS
= 15 mA
Figure 10. Body Diode Characteristic at 150 ºC
25
20
Conditions:
I
DS
= 50 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
Gate-Source Voltage, V
GS
(V)
-50
-25
0
25
50
75
100
125
150
Threshold Voltage, V
th
(V)
2.5
2.0
1.5
1.0
0.5
0.0
15
10
5
0
-5
Junction Temperature T
J
(°C)
0
40
80
120
160
200
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristic
5
C2M0025120D Rev. 5, 04-2021
