V
DS
1000 V
32 A
65 mΩ
C3M0065100J
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features
Package
TAB
Drain
I
D
@
25˚C
R
DS(on)
•
•
•
•
•
•
•
C3M
TM
SiC MOSFET technology
Low parasitic inductance with separate driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low On-resistance
Fast intrinsic diode with low reverse recovery (Qrr)
Low output capacitance (60pF)
Halogen free, RoHS compliant
Benefits
•
•
•
•
Reduce switching losses and minimize gate ringing
Higher system efficiency
Increase power density
Increase system switching frequency
Drain
(TAB)
1 2 3
G KS S
4 5
S S
6
S
7
S
Applications
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Part Number
C3M0065100J
Package
TO-263-7
Marking
C3M0065100J
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
Continuous Drain Current
Pulsed Drain Current
Avalanche energy, Single pulse
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Value
1000
-8/+19
-4/+15
32
21
90
110
113.5
-55 to
+150
260
Unit
V
V
V
A
A
mJ
W
˚C
˚C
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
Note
V
DSmax
V
GSmax
V
GSop
I
D
I
D(pulse)
E
AS
P
D
T
J
, T
stg
T
L
AC (f >1 Hz)
Static
V
GS
= 15 V, T
C
= 25˚C
V
GS
= 15 V, T
C
= 100˚C
Pulse width t
P
limited by T
jmax
I
D
= 22A, V
DD
= 50V
T
C
=25˚C, T
J
= 150 ˚C
Note. 1
Note. 2
Fig. 19
Fig. 22
Fig. 20
1.6mm (0.063”) from case for 10s
Note (1): When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
C3M0065100J Rev. 1, 09-2020
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
E
oss
E
ON
E
OFF
t
d(on)
t
r
t
d(off)
t
f
R
G(int)
Q
gs
Q
gd
Q
g
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Min.
1000
1.8
Typ.
2.1
1.6
1
10
65
95
14.3
11.9
760
70
5
15
103
30
7
8
13
6
3.5
9
9
32
Max.
3.5
100
250
78
Unit
V
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
V
DS
= V
GS
, I
D
= 5 mA
V
DS
= V
GS
, I
D
= 5 mA, T
J
= 150ºC
V
DS
= 1000 V, V
GS
= 0 V
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 15 V, I
D
= 20 A
V
GS
= 15 V, I
D
= 20A, T
J
= 150ºC
V
DS
= 20 V, I
DS
= 20 A
V
DS
= 20 V, I
DS
= 20 A, T
J
= 150ºC
V
GS
= 0 V, V
DS
= 600 V
f = 1 MHz
V
AC
= 25 mV
Note
V
V
μA
nA
mΩ
S
Fig. 11
Fig. 4,
5, 6
Fig. 7
pF
Fig. 17,
18
μJ
μJ
Fig. 16
Fig. 26,
30
Note. 3
V
DS
= 700 V, V
GS
= -4 V/15 V, I
D
= 20A,
R
G(ext)
= 2.5Ω, L= 130 μH,
T
J
= 150ºC
ns
V
DD
= 700 V, V
GS
= -4 V/15 V
I
D
= 20 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Inductive load
f = 1 MHz, V
AC
= 25 mV
V
DS
= 700 V, V
GS
= -4 V/15 V
I
D
= 20 A
Per IEC60747-8-4 pg 21
Fig. 27
Ω
nC
Fig. 12
Reverse Diode Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
SD
I
S
I
S, pulse
t
rr
Q
rr
I
rrm
Parameter
Diode Forward Voltage
Continuous Diode Forward Current
Diode pulse Current
Reverse Recovery time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.5
4.2
Max.
Unit
V
V
Test Conditions
V
GS
= -4 V, I
SD
= 10 A
V
GS
= -4 V, I
SD
= 10 A, T
J
= 150 °C
V
GS
= -4 V
V
GS
= -4 V,
pulse width t
P
limited by T
jmax
V
GS
= -4 V, I
SD
= 20 A, V
R
= 700 V
dif/dt = 4500 A/µs, T
J
= 150 °C
Note
Fig. 8,
9, 10
Note 1
Note 1
22
90
15
159
19
A
A
ns
nC
A
Note 1
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
1.1
40
Unit
°C/W
Test Conditions
Note
Fig. 21
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2
C3M0065100J Rev. 1, 09-2020
Typical Performance
80
70
Conditions:
T
j
= -55 °C
tp = < 200 µs
80
V
GS
= 15V
V
GS
= 13V
70
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
Drain-Source Current, I
DS
(A)
50
40
30
20
10
0
V
GS
= 11V
Drain-Source Current, I
DS
(A)
60
60
50
40
30
20
10
0
V
GS
= 7V
V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 ºC
80
70
Conditions:
T
j
= 150 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
Figure 2. Output Characteristics T
J
= 25 ºC
1.8
1.6
Conditions:
I
DS
= 20 A
V
GS
= 15 V
t
p
< 200 µs
Drain-Source Current, I
DS
(A)
On Resistance, R
DS On
(P.U.)
12.0
60
50
40
30
20
10
0
V
GS
= 7V
V
GS
= 9V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
4.0
6.0
8.0
10.0
0.0
-50
-25
0
Drain-Source Voltage, V
DS
(V)
Junction Temperature, T
vj
(°C)
25
50
75
100
125
150
Figure 3. Output Characteristics T
J
= 150 ºC
140
120
Conditions:
V
GS
= 15 V
t
p
< 200 µs
T
j
= 150 °C
Figure 4. Normalized On-Resistance vs. Temperature
180
160
Conditions:
I
DS
= 20 A
t
p
< 200 µs
On Resistance, R
DS On
(mOhms)
100
80
60
40
20
0
On Resistance, R
DS On
(mOhms)
140
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
V
GS
= 11 V
V
GS
= 13 V
V
GS
= 15 V
T
j
= -55 °C
T
j
= 25 °C
0
10
20
Drain-Source Current, I
DS
(A)
30
40
50
60
70
Junction Temperature, T
vj
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
C3M0065100J Rev. 1, 09-2020
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Typical Performance
80
70
Conditions:
V
DS
= 20 V
tp < 200 µs
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
Drain-Source Current, I
DS
(A)
60
50
40
30
20
10
0
T
J
= 25 °C
T
J
= 150 °C
T
J
= -55 °C
Drain-Source Current, I
DS
(A)
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
-20
-30
-40
-50
-60
Conditions:
T
j
= -55°C
t
p
< 200 µs
-70
-80
0
2
4
6
8
10
12
Gate-Source Voltage, V
GS
(V)
Drain-Source Voltage V
DS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
Figure 8. Body Diode Characteristic at -55 ºC
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
V
GS
= 0 V
V
GS
= -2 V
Drain-Source Current, I
DS
(A)
-20
-30
-40
-50
-60
Conditions:
T
j
= 25°C
t
p
< 200 µs
Drain-Source Current, I
DS
(A)
V
GS
= -4 V
-20
-30
-40
-50
-60
Conditions:
T
j
= 150°C
t
p
< 200 µs
-70
-80
-70
-80
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
3.0
2.5
Conditons
V
GS
= V
DS
I
DS
= 5 mA
Figure 10. Body Diode Characteristic at 150 ºC
16
Conditions:
I
DS
= 20 A
I
GS
= 50 mA
V
DS
= 700 V
T
J
= 25 °C
12
Threshold Voltage, V
th
(V)
2.0
1.5
1.0
0.5
0.0
Gate-Source Voltage, V
GS
(V)
8
4
0
-50
-25
0
Junction Temperature T
J
(°C)
25
50
75
100
125
150
-4
0
5
10
15
20
25
30
35
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0065100J Rev. 1, 09-2020
Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
V
GS
= 5 V
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
Drain-Source Current, I
DS
(A)
V
GS
= 0 V
Drain-Source Current, I
DS
(A)
-20
-30
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
-20
-30
-40
-50
-60
Conditions:
T
j
= 25 °C
t
p
< 200 µs
-40
-50
-60
Conditions:
T
j
= -55 °C
t
p
< 200 µs
-70
-80
-70
-80
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-8
-7
-6
-5
-4
V
GS
= 0 V
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
35
30
25
20
15
10
5
0
-3
-2
-1
0
-10
Drain-Source Current, I
DS
(A)
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
-30
-40
-50
-60
Conditions:
T
j
= 150 °C
t
p
< 200 µs
-70
-80
Stored Energy, E
OSS
(µJ)
-20
Drain-Source Voltage V
DS
(V)
0
100
200
Drain to Source Voltage, V
DS
(V)
300
400
500
600
700
800
900
1000
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
Figure 16. Output Capacitor Stored Energy
10000
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
1000
C
iss
1000
C
iss
Capacitance (pF)
C
oss
100
Capacitance (pF)
100
C
oss
10
C
rss
10
C
rss
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
1
0
100
200
300
400
500
600
Drain-Source Voltage, V
DS
(V)
700
800
900
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
5
C3M0065100J Rev. 1, 09-2020
