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C3M0065100J-TR

表面贴装型 N 通道 1000 V 35A(Tc) 113.5W(Tc) TO-263-7

产品类别:分立半导体    晶体管   

制造商:Wolfspeed (Cree)

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C3M0065100J-TR概述
新 C3M 碳化硅 (SiC) MOSFET 技术
在整个工作温度范围内,漏-源击穿电压最小为 1000 V
新低阻抗封装,带驱动器源
漏极与源极之间 8 mm 漏电/间隙
高速切换,具有低输出电容
高阻塞电压,带低漏-源通态电阻
可耐受雪崩
快速固有二极管,带低反向恢复
C3M0065100J-TR规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
Wolfspeed (Cree)
系列
C3M™
包装
卷带(TR)
FET 类型
N 通道
技术
SiCFET(碳化硅)
漏源电压(Vdss)
1000 V
25°C 时电流 - 连续漏极 (Id)
35A(Tc)
驱动电压(最大 Rds On,最小 Rds On)
15V
不同 Id、Vgs 时导通电阻(最大值)
78 毫欧 @ 20A,15V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 5mA
不同 Vgs 时栅极电荷 (Qg)(最大值)
35 nC @ 15 V
Vgs(最大值)
+15V,-4V
不同 Vds 时输入电容 (Ciss)(最大值)
660 pF @ 600 V
功率耗散(最大值)
113.5W(Tc)
工作温度
-55°C ~ 150°C(TJ)
安装类型
表面贴装型
供应商器件封装
TO-263-7
封装/外壳
TO-263-8,D²Pak(7 引线+接片),TO-263CA
基本产品编号
C3M0065100
C3M0065100J-TR文档预览
V
DS
1000 V
32 A
65 mΩ
C3M0065100J
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features
Package
TAB
Drain
I
D
@
25˚C
R
DS(on)
C3M
TM
SiC MOSFET technology
Low parasitic inductance with separate driver source pin
7mm of creepage distance between drain and source
High blocking voltage with low On-resistance
Fast intrinsic diode with low reverse recovery (Qrr)
Low output capacitance (60pF)
Halogen free, RoHS compliant
Benefits
Reduce switching losses and minimize gate ringing
Higher system efficiency
Increase power density
Increase system switching frequency
Drain
(TAB)
1 2 3
G KS S
4 5
S S
6
S
7
S
Applications
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power
Source
(Pin 3,4,5,6,7)
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Part Number
C3M0065100J
Package
TO-263-7
Marking
C3M0065100J
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
Continuous Drain Current
Pulsed Drain Current
Avalanche energy, Single pulse
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Value
1000
-8/+19
-4/+15
32
21
90
110
113.5
-55 to
+150
260
Unit
V
V
V
A
A
mJ
W
˚C
˚C
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
Note
V
DSmax
V
GSmax
V
GSop
I
D
I
D(pulse)
E
AS
P
D
T
J
, T
stg
T
L
AC (f >1 Hz)
Static
V
GS
= 15 V, T
C
= 25˚C
V
GS
= 15 V, T
C
= 100˚C
Pulse width t
P
limited by T
jmax
I
D
= 22A, V
DD
= 50V
T
C
=25˚C, T
J
= 150 ˚C
Note. 1
Note. 2
Fig. 19
Fig. 22
Fig. 20
1.6mm (0.063”) from case for 10s
Note (1): When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
C3M0065100J Rev. 1, 09-2020
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
E
oss
E
ON
E
OFF
t
d(on)
t
r
t
d(off)
t
f
R
G(int)
Q
gs
Q
gd
Q
g
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Min.
1000
1.8
Typ.
2.1
1.6
1
10
65
95
14.3
11.9
760
70
5
15
103
30
7
8
13
6
3.5
9
9
32
Max.
3.5
100
250
78
Unit
V
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
V
DS
= V
GS
, I
D
= 5 mA
V
DS
= V
GS
, I
D
= 5 mA, T
J
= 150ºC
V
DS
= 1000 V, V
GS
= 0 V
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 15 V, I
D
= 20 A
V
GS
= 15 V, I
D
= 20A, T
J
= 150ºC
V
DS
= 20 V, I
DS
= 20 A
V
DS
= 20 V, I
DS
= 20 A, T
J
= 150ºC
V
GS
= 0 V, V
DS
= 600 V
f = 1 MHz
V
AC
= 25 mV
Note
V
V
μA
nA
mΩ
S
Fig. 11
Fig. 4,
5, 6
Fig. 7
pF
Fig. 17,
18
μJ
μJ
Fig. 16
Fig. 26,
30
Note. 3
V
DS
= 700 V, V
GS
= -4 V/15 V, I
D
= 20A,
R
G(ext)
= 2.5Ω, L= 130 μH,
T
J
= 150ºC
ns
V
DD
= 700 V, V
GS
= -4 V/15 V
I
D
= 20 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Inductive load
f = 1 MHz, V
AC
= 25 mV
V
DS
= 700 V, V
GS
= -4 V/15 V
I
D
= 20 A
Per IEC60747-8-4 pg 21
Fig. 27
nC
Fig. 12
Reverse Diode Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
SD
I
S
I
S, pulse
t
rr
Q
rr
I
rrm
Parameter
Diode Forward Voltage
Continuous Diode Forward Current
Diode pulse Current
Reverse Recovery time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.5
4.2
Max.
Unit
V
V
Test Conditions
V
GS
= -4 V, I
SD
= 10 A
V
GS
= -4 V, I
SD
= 10 A, T
J
= 150 °C
V
GS
= -4 V
V
GS
= -4 V,
pulse width t
P
limited by T
jmax
V
GS
= -4 V, I
SD
= 20 A, V
R
= 700 V
dif/dt = 4500 A/µs, T
J
= 150 °C
Note
Fig. 8,
9, 10
Note 1
Note 1
22
90
15
159
19
A
A
ns
nC
A
Note 1
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
1.1
40
Unit
°C/W
Test Conditions
Note
Fig. 21
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2
C3M0065100J Rev. 1, 09-2020
Typical Performance
80
70
Conditions:
T
j
= -55 °C
tp = < 200 µs
80
V
GS
= 15V
V
GS
= 13V
70
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
Drain-Source Current, I
DS
(A)
50
40
30
20
10
0
V
GS
= 11V
Drain-Source Current, I
DS
(A)
60
60
50
40
30
20
10
0
V
GS
= 7V
V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 ºC
80
70
Conditions:
T
j
= 150 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
Figure 2. Output Characteristics T
J
= 25 ºC
1.8
1.6
Conditions:
I
DS
= 20 A
V
GS
= 15 V
t
p
< 200 µs
Drain-Source Current, I
DS
(A)
On Resistance, R
DS On
(P.U.)
12.0
60
50
40
30
20
10
0
V
GS
= 7V
V
GS
= 9V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
4.0
6.0
8.0
10.0
0.0
-50
-25
0
Drain-Source Voltage, V
DS
(V)
Junction Temperature, T
vj
(°C)
25
50
75
100
125
150
Figure 3. Output Characteristics T
J
= 150 ºC
140
120
Conditions:
V
GS
= 15 V
t
p
< 200 µs
T
j
= 150 °C
Figure 4. Normalized On-Resistance vs. Temperature
180
160
Conditions:
I
DS
= 20 A
t
p
< 200 µs
On Resistance, R
DS On
(mOhms)
100
80
60
40
20
0
On Resistance, R
DS On
(mOhms)
140
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
V
GS
= 11 V
V
GS
= 13 V
V
GS
= 15 V
T
j
= -55 °C
T
j
= 25 °C
0
10
20
Drain-Source Current, I
DS
(A)
30
40
50
60
70
Junction Temperature, T
vj
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
C3M0065100J Rev. 1, 09-2020
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Typical Performance
80
70
Conditions:
V
DS
= 20 V
tp < 200 µs
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
Drain-Source Current, I
DS
(A)
60
50
40
30
20
10
0
T
J
= 25 °C
T
J
= 150 °C
T
J
= -55 °C
Drain-Source Current, I
DS
(A)
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
-20
-30
-40
-50
-60
Conditions:
T
j
= -55°C
t
p
< 200 µs
-70
-80
0
2
4
6
8
10
12
Gate-Source Voltage, V
GS
(V)
Drain-Source Voltage V
DS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
Figure 8. Body Diode Characteristic at -55 ºC
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
V
GS
= 0 V
V
GS
= -2 V
Drain-Source Current, I
DS
(A)
-20
-30
-40
-50
-60
Conditions:
T
j
= 25°C
t
p
< 200 µs
Drain-Source Current, I
DS
(A)
V
GS
= -4 V
-20
-30
-40
-50
-60
Conditions:
T
j
= 150°C
t
p
< 200 µs
-70
-80
-70
-80
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
3.0
2.5
Conditons
V
GS
= V
DS
I
DS
= 5 mA
Figure 10. Body Diode Characteristic at 150 ºC
16
Conditions:
I
DS
= 20 A
I
GS
= 50 mA
V
DS
= 700 V
T
J
= 25 °C
12
Threshold Voltage, V
th
(V)
2.0
1.5
1.0
0.5
0.0
Gate-Source Voltage, V
GS
(V)
8
4
0
-50
-25
0
Junction Temperature T
J
(°C)
25
50
75
100
125
150
-4
0
5
10
15
20
25
30
35
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0065100J Rev. 1, 09-2020
Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
V
GS
= 5 V
-8
-7
-6
-5
-4
-3
-2
-1
0
0
-10
Drain-Source Current, I
DS
(A)
V
GS
= 0 V
Drain-Source Current, I
DS
(A)
-20
-30
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
-20
-30
-40
-50
-60
Conditions:
T
j
= 25 °C
t
p
< 200 µs
-40
-50
-60
Conditions:
T
j
= -55 °C
t
p
< 200 µs
-70
-80
-70
-80
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-8
-7
-6
-5
-4
V
GS
= 0 V
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
35
30
25
20
15
10
5
0
-3
-2
-1
0
-10
Drain-Source Current, I
DS
(A)
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
-30
-40
-50
-60
Conditions:
T
j
= 150 °C
t
p
< 200 µs
-70
-80
Stored Energy, E
OSS
(µJ)
-20
Drain-Source Voltage V
DS
(V)
0
100
200
Drain to Source Voltage, V
DS
(V)
300
400
500
600
700
800
900
1000
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
Figure 16. Output Capacitor Stored Energy
10000
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
1000
C
iss
1000
C
iss
Capacitance (pF)
C
oss
100
Capacitance (pF)
100
C
oss
10
C
rss
10
C
rss
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
1
0
100
200
300
400
500
600
Drain-Source Voltage, V
DS
(V)
700
800
900
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
5
C3M0065100J Rev. 1, 09-2020
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