Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39
厂商名称:CDIL[Continental Device India Pvt. Ltd.]
下载文档型号 | 2N1990 | 2N2193 | 2N2102 | 2N2218A | 2N1987 | 2N1989 | 2N2194 | 2N2049 | 2N2195 | 2N1988 |
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描述 | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 |
是否Rohs认证 | 不符合 | 不符合 | 符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli | compli |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 20 | 15 | 10 | 25 | 20 | 20 | 12 | 100 | 20 | 35 |
JEDEC-95代码 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 200 °C | 200 °C | 200 °C | 150 °C | 150 °C | 200 °C | 200 °C | 200 °C | 150 °C |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
最大功率耗散 (Abs) | 0.6 W | 0.8 W | 1 W | 0.8 W | 0.6 W | 0.6 W | 0.8 W | 0.8 W | 0.6 W | 0.6 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
VCEsat-Max | 0.5 V | 0.35 V | 0.5 V | 1 V | 1.5 V | 2 V | 0.35 V | 0.4 V | 0.35 V | 2 V |
JESD-609代码 | e0 | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |
ECCN代码 | - | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | - | EAR99 |
最大集电极电流 (IC) | - | 1 A | 1 A | 0.8 A | 1 A | - | 1 A | 0.5 A | 1 A | - |
基于收集器的最大容量 | - | 20 pF | 15 pF | 8 pF | 35 pF | 20 pF | 20 pF | 25 pF | 20 pF | 20 pF |
集电极-发射极最大电压 | - | 50 V | 65 V | 40 V | 25 V | 45 V | 40 V | 50 V | 25 V | 45 V |
标称过渡频率 (fT) | - | 50 MHz | 60 MHz | 300 MHz | 40 MHz | 40 MHz | 50 MHz | 50 MHz | 50 MHz | 40 MHz |