型号
- 型号
- 关键词
| 型号 | 2N2153 | 2N2158 | 2N2156 | 2N2154 | 2N2152 |
|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 30A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 | Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 | Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 | Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-36, | Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-36 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | _compli | _compli | _compli | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 30 A | 30 A | 30 A | 30 A | 30 A |
| 集电极-发射极最大电压 | 45 V | 60 V | 30 V | 60 V | 30 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 25 | 40 | 40 | 25 | 25 |
| JEDEC-95代码 | TO-36 | TO-36 | TO-36 | TO-36 | TO-36 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 最高工作温度 | 110 °C | 110 °C | 110 °C | 110 °C | 110 °C |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 170 W | 170 W | 170 W | 170 W | 170 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 0.002 MHz | 0.002 MHz | 0.002 MHz | 0.002 MHz | 0.002 MHz |
| Base Number Matches | - | 1 | 1 | 1 | - |