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2N6677

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
4 A, 80 V, NPN, 硅, 功率晶体管, TO-126

器件类别：半导体    分立半导体   

厂商名称：ISC

厂商官网：http://www.iscsemi.cn/

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器件：2N6677

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器件参数
参数名称
属性值
最大集电极电流
4 A
最大集电极发射极电压
80 V
端子数量
3
each_compli
Yes
状态
Active
结构
DARLINGTON
最小直流放大倍数
750
jedec_95_code
TO-126
jesd_30_code
R-PSFM-T3
jesd_609_code
e0
moisture_sensitivity_level
NOT SPECIFIED
元件数量
1
最大工作温度
150 Cel
包装材料
PLASTIC/EPOXY
包装形状
RECTANGULAR
包装尺寸
FLANGE MOUNT
eak_reflow_temperature__cel_
NOT SPECIFIED
larity_channel_type
NPN
wer_dissipation_max__abs_
40 W
qualification_status
COMMERCIAL
sub_category
Other Transistors
表面贴装
NO
端子涂层
TIN LEAD
端子形式
THROUGH-HOLE
端子位置
SINGLE
ime_peak_reflow_temperature_max__s_
NOT SPECIFIED
晶体管元件材料
SILICON
额定交叉频率
1 MHz
文档预览
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type MJE700/701/702/703
・High
DC current gain
・DARLINGTON
APPLICATIONS
・Designed
for general–purpose amplifier
and low–speed switching applications
PINNING (see Fig.2)
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
MJE800/801/802/803
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
固电
导½
半
PARAMETER
V
CBO
V
CEO
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
MJE800/801
MJE802/803
MJE800/801
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
60
80
60
80
5
4
0.1
UNIT
V
V
MJE802/803
V
EBO
I
C
I
B
P
C
T
j
T
stg
V
A
A
W
℃
℃
T
C
=25℃
40
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
MJE800/801
I
C
=50mA;I
B
=0
MJE802/803
MJE800/802
MJE801/803
I
C
=1.5A ;I
B
=30mA
I
C
=2A ;I
B
=40mA
I
C
=4A ;I
B
=40mA
I
C
=1.5A ; V
CE
=3V
CONDITIONS
MJE800/801/802/803
MIN
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
80
2.5
V
2.8
3.0
V
V
CEsat-1
Collector-emitter
saturation voltage
V
CEsat-2
Collector-emitter saturation voltage
MJE800/802
MJE801/803
V
BE-1
Base-emitter
on voltage
Base-emitter
on voltage
Collector
cut-off current
2.5
I
C
=2A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
MJE800/801
MJE802/803
V
CE
=60V; I
B
=0
V
CE
=80V; I
B
=0
3.0
V
V
BE-2
V
I
CEO
I
CBO
I
EBO
固电
Collector cut-off current
导½
半
h
FE-1
ANG
CH
IN
Emitter cut-off current
DC current gain
DC current gain
MJE800/802
MJE801/803
MIC
E SE
V
EB
=5V; I
C
=0
I
C
=1.5A ; V
CE
=3V
I
C
=2A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
V
CB
=Rated BV
CEO
; I
E
=0
T
C
=100℃
OR
CT
NDU
O
100
100
500
2
750
μA
μA
mA
h
FE-2
100
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE800/801/802/803
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
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参数对比
与2N6677相近的元器件有：MJE800、MJE801、MJE802、MJE803、2N6678、2N6676。描述及对比如下：
型号 2N6677 MJE800 MJE801 MJE802 MJE803 2N6678 2N6676
描述 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-204AA
最大集电极电流 4 A 4 A 4 A 4 A 4 A - -
最大集电极发射极电压 80 V 80 V 80 V 80 V 80 V - -
端子数量 3 3 3 3 3 - -
each_compli Yes Yes Yes Yes Yes - -
状态 Active Active Active Active Active - -
结构 DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON - -
最小直流放大倍数 750 750 750 750 750 - -
jedec_95_code TO-126 TO-126 TO-126 TO-126 TO-126 - -
jesd_30_code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - -
jesd_609_code e0 e0 e0 e0 e0 - -
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
元件数量 1 1 1 1 1 - -
最大工作温度 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel - -
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
包装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
包装尺寸 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - -
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
larity_channel_type NPN NPN NPN NPN NPN - -
wer_dissipation_max__abs_ 40 W 40 W 40 W 40 W 40 W - -
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL - -
sub_category Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors - -
表面贴装 NO NO NO NO NO - -
端子涂层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD - -
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - -
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE - -
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON - -
额定交叉频率 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz - -
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器件捷径:
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