型号
  • 型号
  • 关键词
首页 > 器件类别 > 半导体 > 分立半导体

2N6678

15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA

器件类别：半导体    分立半导体   

厂商名称：ISC

厂商官网：http://www.iscsemi.cn/

下载文档
预览 参数对比
2N6678 在线购买

供应商：

器件：2N6678

价格：-

最低购买：-

库存：点击查看

点击购买

文档预览
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type MJE700/701/702/703
・High
DC current gain
・DARLINGTON
APPLICATIONS
・Designed
for general–purpose amplifier
and low–speed switching applications
PINNING (see Fig.2)
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
MJE800/801/802/803
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
固电
导½
半
PARAMETER
V
CBO
V
CEO
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
MJE800/801
MJE802/803
MJE800/801
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
60
80
60
80
5
4
0.1
UNIT
V
V
MJE802/803
V
EBO
I
C
I
B
P
C
T
j
T
stg
V
A
A
W
℃
℃
T
C
=25℃
40
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
MJE800/801
I
C
=50mA;I
B
=0
MJE802/803
MJE800/802
MJE801/803
I
C
=1.5A ;I
B
=30mA
I
C
=2A ;I
B
=40mA
I
C
=4A ;I
B
=40mA
I
C
=1.5A ; V
CE
=3V
CONDITIONS
MJE800/801/802/803
MIN
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
80
2.5
V
2.8
3.0
V
V
CEsat-1
Collector-emitter
saturation voltage
V
CEsat-2
Collector-emitter saturation voltage
MJE800/802
MJE801/803
V
BE-1
Base-emitter
on voltage
Base-emitter
on voltage
Collector
cut-off current
2.5
I
C
=2A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
MJE800/801
MJE802/803
V
CE
=60V; I
B
=0
V
CE
=80V; I
B
=0
3.0
V
V
BE-2
V
I
CEO
I
CBO
I
EBO
固电
Collector cut-off current
导½
半
h
FE-1
ANG
CH
IN
Emitter cut-off current
DC current gain
DC current gain
MJE800/802
MJE801/803
MIC
E SE
V
EB
=5V; I
C
=0
I
C
=1.5A ; V
CE
=3V
I
C
=2A ; V
CE
=3V
I
C
=4A ; V
CE
=3V
V
CB
=Rated BV
CEO
; I
E
=0
T
C
=100℃
OR
CT
NDU
O
100
100
500
2
750
μA
μA
mA
h
FE-2
100
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE800/801/802/803
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
查看更多>
参数对比
与2N6678相近的元器件有：MJE800、MJE801、MJE802、MJE803、2N6677、2N6676。描述及对比如下：
型号 2N6678 MJE800 MJE801 MJE802 MJE803 2N6677 2N6676
描述 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-204AA
最大集电极电流 - 4 A 4 A 4 A 4 A 4 A -
最大集电极发射极电压 - 80 V 80 V 80 V 80 V 80 V -
端子数量 - 3 3 3 3 3 -
each_compli - Yes Yes Yes Yes Yes -
状态 - Active Active Active Active Active -
结构 - DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON -
最小直流放大倍数 - 750 750 750 750 750 -
jedec_95_code - TO-126 TO-126 TO-126 TO-126 TO-126 -
jesd_30_code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
jesd_609_code - e0 e0 e0 e0 e0 -
moisture_sensitivity_level - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
元件数量 - 1 1 1 1 1 -
最大工作温度 - 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel -
包装材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
包装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
包装尺寸 - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
eak_reflow_temperature__cel_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
larity_channel_type - NPN NPN NPN NPN NPN -
wer_dissipation_max__abs_ - 40 W 40 W 40 W 40 W 40 W -
qualification_status - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL -
sub_category - Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors -
表面贴装 - NO NO NO NO NO -
端子涂层 - TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD -
端子形式 - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
端子位置 - SINGLE SINGLE SINGLE SINGLE SINGLE -
ime_peak_reflow_temperature_max__s_ - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
晶体管元件材料 - SILICON SILICON SILICON SILICON SILICON -
额定交叉频率 - 1 MHz 1 MHz 1 MHz 1 MHz 1 MHz -
热门器件
热门资源推荐
PIC单片机控制的遥控防盗报警器电路 红外线探测报警器 使用ESP8266从NTP服务器获取时间并在OLED显示器上显示 开关电源的基本组成及工作原理 用NE555制作定时器 RS-485基础知识:处理空闲总线条件的两种常见方法 如何构建一个触摸传感器电路 如何调制IC555振荡器 基于ICL296的大电流开关稳压器电源电路 基于TDA2003的简单低功耗汽车立体声放大器电路
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消