71L024L100PZI,71L024L100PZI pdf中文资料,71L024L100PZI引脚图,71L024L100PZI电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否无铅

含铅

是否Rohs认证

不符合

厂商名称

IDT (Integrated Device Technology)

包装说明

8 X 13.40 MM, TSOP1-32

Reach Compliance Code

not_compliant

最长访问时间

100 ns

I/O 类型

COMMON

JESD-30 代码

R-PDSO-G32

JESD-609代码

内存密度

1048576 bit

内存集成电路类型

STANDARD SRAM

内存宽度

功能数量

端子数量

字数

131072 words

字数代码

128000

工作模式

ASYNCHRONOUS

最高工作温度

85 °C

最低工作温度

-40 °C

组织

128KX8

输出特性

3-STATE

封装主体材料

PLASTIC/EPOXY

封装代码

TSOP1

封装等效代码

TSOP32,.46

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE, THIN PROFILE

并行/串行

PARALLEL

峰值回流温度（摄氏度）

NOT SPECIFIED

电源

3 V

认证状态

Not Qualified

最大待机电流

0.000005 A

最小待机电流

1.5 V

最大压摆率

0.018 mA

最大供电电压 (Vsup)

3.6 V

最小供电电压 (Vsup)

2.7 V

标称供电电压 (Vsup)

3 V

表面贴装

YES

技术

CMOS

温度等级

INDUSTRIAL

端子面层

Tin/Lead (Sn/Pb)

端子形式

GULL WING

端子节距

1.27 mm

端子位置

DUAL

处于峰值回流温度下的最长时间

NOT SPECIFIED

参数对比

与71L024L100PZI相近的元器件有：71L024L70PZI、71L024L70BF、71L024L100BFI、71L024L100PZ、71L024L100BF、71L024L70BFI、71L024L70PZ。描述及对比如下：

型号	71L024L100PZI	71L024L70PZI	71L024L70BF	71L024L100BFI	71L024L100PZ	71L024L100BF	71L024L70BFI	71L024L70PZ
描述	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32	Standard SRAM, 128KX8, 70ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 100ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32	Standard SRAM, 128KX8, 100ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 70ns, CMOS, PBGA46, 7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
包装说明	8 X 13.40 MM, TSOP1-32	8 X 13.40 MM, TSOP1-32	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	8 X 13.40 MM, TSOP1-32	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	7 X 9 MM, 1.40 MM HEIGHT, 0.75 MM PITCH, FPBGA-46	8 X 13.40 MM, TSOP1-32
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
最长访问时间	100 ns	70 ns	70 ns	100 ns	100 ns	100 ns	70 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G32	R-PDSO-G32	R-PBGA-B46	R-PBGA-B46	R-PDSO-G32	R-PBGA-B46	R-PBGA-B46	R-PDSO-G32
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	32	32	46	46	32	46	46	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	85 °C	70 °C	70 °C	85 °C	70 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TSOP1	LFBGA	LFBGA	TSOP1	LFBGA	LFBGA	TSOP1
封装等效代码	TSOP32,.46	TSOP32,.46	BGA48,6X8,30	BGA48,6X8,30	TSOP32,.46	BGA48,6X8,30	BGA48,6X8,30	TSOP32,.46
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
最小待机电流	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
最大压摆率	0.018 mA	0.025 mA	0.025 mA	0.018 mA	0.018 mA	0.018 mA	0.025 mA	0.025 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	BALL	BALL	GULL WING	BALL	BALL	GULL WING
端子节距	1.27 mm	1.27 mm	0.75 mm	0.75 mm	1.27 mm	0.75 mm	0.75 mm	1.27 mm
端子位置	DUAL	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM	BOTTOM	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED