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934055051115

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：NXP(恩智浦)

厂商官网：https://www.nxp.com

器件标准：  

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SC-75
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 2.1
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
50
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
260
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143X series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
Product specification
Supersedes data of 2002 Jan 15
2003 Apr 10
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PDTC143X series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
TYP.
−
−
4.7
10
MAX.
50
100
−
−
UNIT
V
mA
kΩ
kΩ
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTC143XE
PDTC143XK
PDTC143XM
PDTC143XS
PDTC143XT
PDTC143XU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-59
SC-101
SC-43
−
SC-70
34
26
E2
TC143X
*32
(1)
*53
(1)
PDTA143XE
PDTA143XK
PDTA143XM
PDTA143XS
PDTA143XT
PDTA143XU
MARKING CODE
PNP COMPLEMENT
2003 Apr 10
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTC143X series
PINNING
TYPE NUMBER
PDTC143XS
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
2
R1
1
R2
3
MAM364
DESCRIPTION
base
collector
emitter
1
2
3
3
PDTC143XE
PDTC143XK
PDTC143XT
PDTC143XU
1
Top view
2
MDB269
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
R2
3
3
2
PDTC143XM
handbook, halfpage
1
2
3
R1
1
3
1
bottom view
MHC506
base
emitter
collector
3
2
R2
2
2003 Apr 10
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm
copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm
copper strip line.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
−
−
−
−
−
−
−
−
−
−
CONDITIONS
open emitter
open base
open collector
−
−
−
PDTC143X series
MIN.
MAX.
50
50
10
+20
−7
100
100
500
250
250
200
150
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mW
mW
mW
mW
mW
mW
°C
°C
°C
−65
−
−65
VALUE
250
500
500
625
833
500
K/W
K/W
K/W
K/W
K/W
K/W
UNIT
2003 Apr 10
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
CONDITIONS
V
CB
= 50 V; I
C
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100
µA;
V
CE
= 5 V
I
C
= 20 mA; V
CE
= 0.3 V
PDTC143X series
MIN.
−
−
−
−
50
−
−
2.5
3.3
1.7
−
TYP.
−
−
−
−
−
−
0.9
1.5
4.7
2.1
−
MAX.
100
1
50
600
−
100
0.3
−
6.1
2.6
2.5
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
pF
2003 Apr 10
5
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参数对比
与934055051115相近的元器件有：TW-41-03-S-D-120-100、934057543115、934057573126、934056976115、934055052185、934057179315。描述及对比如下：
型号 934055051115 TW-41-03-S-D-120-100 934057543115 934057573126 934056976115 934055052185 934057179315
描述 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN Board Connector, 82 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Terminal, Black Insulator, Receptacle TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, SMD, SC-70, CMPAK-3, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SMT3, SMD, SC-59, MPAK-3, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1.0 x 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN, BIP General Purpose Small Signal
Reach Compliance Code unknown compliant unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
是否无铅 不含铅 不含铅 不含铅 - - - 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 - 符合
零件包装代码 SC-75 - SC-70 TO-92 SOT-23 SOT-23 SC-101
包装说明 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 PLASTIC, SMT3, SMD, SC-59, MPAK-3 SMALL OUTLINE, R-PDSO-G3 CHIP CARRIER, R-PBCC-N3
针数 3 - 3 3 3 3 3
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 2.1 - BUILT-IN BIAS RESISTOR RATIO IS 2.1 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.1
最大集电极电流 (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V - 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 50 - 50 50 50 50 50
JESD-30 代码 R-PDSO-G3 - R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 R-PBCC-N3
JESD-609代码 e3 - e3 e3 e3 - e3
元件数量 1 - 1 1 1 1 1
端子数量 3 - 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR ROUND RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE CHIP CARRIER
峰值回流温度（摄氏度） 260 - 260 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
极性/信道类型 NPN - NPN NPN NPN NPN NPN
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES - YES NO YES YES YES
端子面层 TIN - TIN TIN TIN - TIN
端子形式 GULL WING - GULL WING THROUGH-HOLE GULL WING GULL WING NO LEAD
端子位置 DUAL - DUAL BOTTOM DUAL DUAL BOTTOM
处于峰值回流温度下的最长时间 40 - 40 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 - 1 1 1 1 1
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