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934057179315

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1.0 x 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN, BIP General Purpose Small Signal

器件类别:分立半导体    晶体管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
SC-101
包装说明
CHIP CARRIER, R-PBCC-N3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTOR RATIO IS 2.1
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
50
JESD-30 代码
R-PBCC-N3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN
端子形式
NO LEAD
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143X series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
Product specification
Supersedes data of 2002 Jan 15
2003 Apr 10
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
DESCRIPTION
PDTC143X series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
TYP.
4.7
10
MAX.
50
100
UNIT
V
mA
kΩ
kΩ
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTC143XE
PDTC143XK
PDTC143XM
PDTC143XS
PDTC143XT
PDTC143XU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-59
SC-101
SC-43
SC-70
34
26
E2
TC143X
*32
(1)
*53
(1)
PDTA143XE
PDTA143XK
PDTA143XM
PDTA143XS
PDTA143XT
PDTA143XU
MARKING CODE
PNP COMPLEMENT
2003 Apr 10
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTC143X series
PINNING
TYPE NUMBER
PDTC143XS
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
2
R1
1
R2
3
MAM364
DESCRIPTION
base
collector
emitter
1
2
3
3
PDTC143XE
PDTC143XK
PDTC143XT
PDTC143XU
1
Top view
2
MDB269
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
R2
3
3
2
PDTC143XM
handbook, halfpage
1
2
3
R1
1
3
1
bottom view
MHC506
base
emitter
collector
3
2
R2
2
2003 Apr 10
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm
copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm
copper strip line.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
storage temperature
junction temperature
operating ambient temperature
T
amb
25
°C
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
CONDITIONS
open emitter
open base
open collector
PDTC143X series
MIN.
MAX.
50
50
10
+20
−7
100
100
500
250
250
200
150
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mW
mW
mW
mW
mW
mW
°C
°C
°C
−65
−65
VALUE
250
500
500
625
833
500
K/W
K/W
K/W
K/W
K/W
K/W
UNIT
2003 Apr 10
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
CONDITIONS
V
CB
= 50 V; I
C
= 0
V
CE
= 30 V; I
B
= 0
V
CE
= 30 V; I
B
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100
µA;
V
CE
= 5 V
I
C
= 20 mA; V
CE
= 0.3 V
PDTC143X series
MIN.
50
2.5
3.3
1.7
TYP.
0.9
1.5
4.7
2.1
MAX.
100
1
50
600
100
0.3
6.1
2.6
2.5
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
pF
2003 Apr 10
5
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参数对比
与934057179315相近的元器件有:TW-41-03-S-D-120-100、934057543115、934057573126、934056976115、934055052185、934055051115。描述及对比如下:
型号 934057179315 TW-41-03-S-D-120-100 934057543115 934057573126 934056976115 934055052185 934055051115
描述 TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1.0 x 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SMD, SC-101, 3 PIN, BIP General Purpose Small Signal Board Connector, 82 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Terminal, Black Insulator, Receptacle TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, SMD, SC-70, CMPAK-3, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SPT, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SMT3, SMD, SC-59, MPAK-3, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN
Reach Compliance Code unknown compliant unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
是否无铅 不含铅 不含铅 不含铅 - - - 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 - 符合
零件包装代码 SC-101 - SC-70 TO-92 SOT-23 SOT-23 SC-75
包装说明 CHIP CARRIER, R-PBCC-N3 - SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 PLASTIC, SMT3, SMD, SC-59, MPAK-3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 - 3 3 3 3 3
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 2.1 - BUILT-IN BIAS RESISTOR RATIO IS 2.1 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.1
最大集电极电流 (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V - 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 50 - 50 50 50 50 50
JESD-30 代码 R-PBCC-N3 - R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 - e3 e3 e3 - e3
元件数量 1 - 1 1 1 1 1
端子数量 3 - 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR ROUND RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER - SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED - 260 NOT SPECIFIED NOT SPECIFIED - 260
极性/信道类型 NPN - NPN NPN NPN NPN NPN
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES - YES NO YES YES YES
端子面层 TIN - TIN TIN TIN - TIN
端子形式 NO LEAD - GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING
端子位置 BOTTOM - DUAL BOTTOM DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED - 40 NOT SPECIFIED NOT SPECIFIED - 40
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 - 1 1 1 1 1
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