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ADG509ATQ

Multiplexer Switch ICs 4:1 280 Ohm CMOS

器件类别:模拟混合信号IC    信号电路   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

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器件参数
参数名称
属性值
Brand Name
Analog Devices Inc
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
ADI(亚德诺半导体)
零件包装代码
DIP
包装说明
DIP, DIP16,.3
针数
16
制造商包装代码
Q-16
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Samacsys Description
MULTIPLEXER IC ,CERDIP-16
其他特性
ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY
模拟集成电路 - 其他类型
DIFFERENTIAL MULTIPLEXER
JESD-30 代码
R-GDIP-T16
JESD-609代码
e0
长度
19.495 mm
负电源电压最大值(Vsup)
-16.5 V
负电源电压最小值(Vsup)
-10.8 V
标称负供电电压 (Vsup)
-15 V
信道数量
4
功能数量
1
端子数量
16
标称断态隔离度
68 dB
通态电阻匹配规范
22.5 Ω
最大通态电阻 (Ron)
450 Ω
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, GLASS-SEALED
封装代码
DIP
封装等效代码
DIP16,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT APPLICABLE
电源
12/15,GND/-12/-15 V
认证状态
Not Qualified
座面最大高度
5.08 mm
最大信号电流
0.02 A
最大供电电流 (Isup)
1.5 mA
最大供电电压 (Vsup)
16.5 V
最小供电电压 (Vsup)
10.8 V
标称供电电压 (Vsup)
15 V
表面贴装
NO
最长断开时间
300 ns
最长接通时间
300 ns
切换
BREAK-BEFORE-MAKE
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn63Pb37)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT APPLICABLE
宽度
7.62 mm
参数对比
与ADG509ATQ相近的元器件有:ADG509AKRZ-REEL7、ADG509AKNZ、ADG509AKR-REEL7、ADG508AKN、ADG508AKP、ADG508AKRZ、ADG509AKN、ADG508AKNZ、ADG508AKR-REEL。描述及对比如下:
型号 ADG509ATQ ADG509AKRZ-REEL7 ADG509AKNZ ADG509AKR-REEL7 ADG508AKN ADG508AKP ADG508AKRZ ADG509AKN ADG508AKNZ ADG508AKR-REEL
描述 Multiplexer Switch ICs 4:1 280 Ohm CMOS Multiplexer Switch ICs 4:1 280 Ohm CMOS Multiplexer Switch ICs 4:1 280 Ohm CMOS Multiplexer Switch ICs 4:1 280 Ohm CMOS Multiplexer Switch ICs 8:1 280 Ohm CMOS Multiplexer Switch ICs 8:1 280 Ohm CMOS Multiplexer Switch ICs 8:1 280 Ohm CMOS Multiplexer Switch ICs 4:1 280 Ohm CMOS Multiplexer Switch ICs 8:1 280 Ohm CMOS Multiplexer Switch ICs 8:1 280 Ohm CMOS
Brand Name Analog Devices Inc - Analog Devices Inc - - Analog Devices Inc Analog Devices Inc Analog Devices Inc Analog Devices Inc Analog Devices Inc
是否无铅 含铅 - 含铅 - - 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 - 符合 - - 不符合 符合 不符合 符合 不符合
厂商名称 ADI(亚德诺半导体) - - - - ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体)
零件包装代码 DIP - DIP - - LPCC SOIC DIP DIP SOIC
包装说明 DIP, DIP16,.3 - DIP, DIP16,.3 - - PLASTIC, MO-047AA, LCC-20 SOP, SOP16,.25 DIP, DIP16,.3 DIP, DIP16,.3 MS-012AC, SOIC-16
针数 16 - 16 - - 20 16 16 16 16
制造商包装代码 Q-16 - N-16 - - P-20 R-16 N-16 N-16 R-16
Reach Compliance Code not_compliant - compliant - - not_compliant compliant not_compliant compliant not_compliant
ECCN代码 EAR99 - EAR99 - - EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY - ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY - - ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY ALSO OPERATES WITH 10.8 V TO 16.5 V SINGLE SUPPLY
模拟集成电路 - 其他类型 DIFFERENTIAL MULTIPLEXER - DIFFERENTIAL MULTIPLEXER - - SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER DIFFERENTIAL MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER
JESD-30 代码 R-GDIP-T16 - R-PDIP-T16 - - S-PQCC-J20 R-PDSO-G16 R-PDIP-T16 R-PDIP-T16 R-PDSO-G16
JESD-609代码 e0 - e3 - - e0 e3 e0 e3 e0
长度 19.495 mm - 20.07 mm - - 8.965 mm 9.9 mm 20.07 mm 20.07 mm 9.9 mm
负电源电压最大值(Vsup) -16.5 V - -16.5 V - - -16.5 V -16.5 V -16.5 V -16.5 V -16.5 V
负电源电压最小值(Vsup) -10.8 V - -10.8 V - - -10.8 V -10.8 V -10.8 V -10.8 V -10.8 V
标称负供电电压 (Vsup) -15 V - -15 V - - -15 V -15 V -15 V -15 V -15 V
信道数量 4 - 4 - - 8 8 4 8 8
功能数量 1 - 1 - - 1 1 1 1 1
端子数量 16 - 16 - - 20 16 16 16 16
标称断态隔离度 68 dB - 68 dB - - 68 dB 68 dB 68 dB 68 dB 68 dB
通态电阻匹配规范 22.5 Ω - 22.5 Ω - - 22.5 Ω 22.5 Ω 22.5 Ω 22.5 Ω 22.5 Ω
最大通态电阻 (Ron) 450 Ω - 450 Ω - - 450 Ω 450 Ω 450 Ω 450 Ω 450 Ω
最高工作温度 125 °C - 85 °C - - 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -55 °C - -40 °C - - -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 CERAMIC, GLASS-SEALED - PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP - DIP - - QCCJ SOP DIP DIP SOP
封装等效代码 DIP16,.3 - DIP16,.3 - - LDCC20,.4SQ SOP16,.25 DIP16,.3 DIP16,.3 SOP16,.25
封装形状 RECTANGULAR - RECTANGULAR - - SQUARE RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE - IN-LINE - - CHIP CARRIER SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT APPLICABLE - NOT APPLICABLE - - 220 260 NOT APPLICABLE NOT APPLICABLE 240
电源 12/15,GND/-12/-15 V - 12/15,GND/-12/-15 V - - 12/15,GND/-12/-15 V 12/15,GND/-12/-15 V 12/15,GND/-12/-15 V 12/15,GND/-12/-15 V 12/15,GND/-12/-15 V
认证状态 Not Qualified - Not Qualified - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm - 5.33 mm - - 4.57 mm 1.75 mm 5.33 mm 5.33 mm 1.75 mm
最大信号电流 0.02 A - 0.02 A - - 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A
最大供电电流 (Isup) 1.5 mA - 1.5 mA - - 1.5 mA 1.5 mA 1.5 mA 1.5 mA 1.5 mA
最大供电电压 (Vsup) 16.5 V - 16.5 V - - 16.5 V 16.5 V 16.5 V 16.5 V 16.5 V
最小供电电压 (Vsup) 10.8 V - 10.8 V - - 10.8 V 10.8 V 10.8 V 10.8 V 10.8 V
标称供电电压 (Vsup) 15 V - 15 V - - 15 V 15 V 15 V 15 V 15 V
表面贴装 NO - NO - - YES YES NO NO YES
最长断开时间 300 ns - 300 ns - - 300 ns 300 ns 300 ns 300 ns 300 ns
最长接通时间 300 ns - 300 ns - - 300 ns 300 ns 300 ns 300 ns 300 ns
切换 BREAK-BEFORE-MAKE - BREAK-BEFORE-MAKE - - BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE
技术 CMOS - CMOS - - CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY - INDUSTRIAL - - INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn63Pb37) - Matte Tin (Sn) - - Tin/Lead (Sn85Pb15) Matte Tin (Sn) Tin/Lead (Sn85Pb15) Matte Tin (Sn) Tin/Lead (Sn85Pb15)
端子形式 THROUGH-HOLE - THROUGH-HOLE - - J BEND GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING
端子节距 2.54 mm - 2.54 mm - - 1.27 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm
端子位置 DUAL - DUAL - - QUAD DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT APPLICABLE - NOT APPLICABLE - - 20 30 NOT APPLICABLE NOT APPLICABLE 30
宽度 7.62 mm - 7.62 mm - - 8.965 mm 3.9 mm 7.62 mm 7.62 mm 3.9 mm
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