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ALD1101B

DUAL N-CHANNEL MATCHED MOSFET PAIR

厂商名称:ALD [Advanced Linear Devices]

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参数对比
与ALD1101B相近的元器件有:ALD1101、ALD1101APA、ALD1101DA、ALD1101PA、ALD1101SA、ALD1101A、ALD1101BPA。描述及对比如下:
型号 ALD1101B ALD1101 ALD1101APA ALD1101DA ALD1101PA ALD1101SA ALD1101A ALD1101BPA
描述 DUAL N-CHANNEL MATCHED MOSFET PAIR DUAL N-CHANNEL MATCHED MOSFET PAIR DUAL N-CHANNEL MATCHED MOSFET PAIR DUAL N-CHANNEL MATCHED MOSFET PAIR DUAL N-CHANNEL MATCHED MOSFET PAIR DUAL N-CHANNEL MATCHED MOSFET PAIR DUAL N-CHANNEL MATCHED MOSFET PAIR DUAL N-CHANNEL MATCHED MOSFET PAIR
是否无铅 - - 含铅 含铅 含铅 含铅 - 含铅
是否Rohs认证 - - 不符合 不符合 不符合 不符合 - 不符合
零件包装代码 - - DIP DIP DIP SOT - DIP
包装说明 - - IN-LINE, R-PDIP-T8 IN-LINE, R-GDIP-T8 IN-LINE, R-PDIP-T8 SMALL OUTLINE, R-PDSO-G8 - IN-LINE, R-PDIP-T8
针数 - - 8 8 8 8 - 8
Reach Compliance Code - - unknow unknow unknow unknow - unknow
ECCN代码 - - EAR99 EAR99 EAR99 EAR99 - EAR99
其他特性 - - LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE LOW THRESHOLD, HIGH INPUT IMPEDANCE - LOW THRESHOLD, HIGH INPUT IMPEDANCE
配置 - - COMMON SUBSTRATE, 2 ELEMENTS COMMON SUBSTRATE, 2 ELEMENTS COMMON SUBSTRATE, 2 ELEMENTS COMMON SUBSTRATE, 2 ELEMENTS - COMMON SUBSTRATE, 2 ELEMENTS
最小漏源击穿电压 - - 12 V 12 V 12 V 12 V - 12 V
最大漏源导通电阻 - - 75 Ω 75 Ω 75 Ω 75 Ω - 75 Ω
FET 技术 - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 - - R-PDIP-T8 R-GDIP-T8 R-PDIP-T8 R-PDSO-G8 - R-PDIP-T8
JESD-609代码 - - e0 e0 e0 e0 - e0
元件数量 - - 2 2 2 2 - 2
端子数量 - - 8 8 8 8 - 8
工作模式 - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE
最高工作温度 - - 70 °C 125 °C 70 °C 70 °C - 70 °C
封装主体材料 - - PLASTIC/EPOXY CERAMIC, GLASS-SEALED PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 - - IN-LINE IN-LINE IN-LINE SMALL OUTLINE - IN-LINE
峰值回流温度(摄氏度) - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
极性/信道类型 - - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL
最大功率耗散 (Abs) - - 0.5 W 0.5 W 0.5 W 0.5 W - 0.5 W
认证状态 - - Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
表面贴装 - - NO NO NO YES - NO
端子面层 - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
端子形式 - - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING - THROUGH-HOLE
端子位置 - - DUAL DUAL DUAL DUAL - DUAL
处于峰值回流温度下的最长时间 - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
晶体管应用 - - SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING
晶体管元件材料 - - SILICON SILICON SILICON SILICON - SILICON
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