描述 |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
DUAL N-CHANNEL MATCHED MOSFET PAIR |
是否无铅 |
含铅 |
- |
含铅 |
含铅 |
含铅 |
- |
- |
含铅 |
是否Rohs认证 |
不符合 |
- |
不符合 |
不符合 |
不符合 |
- |
- |
不符合 |
零件包装代码 |
DIP |
- |
DIP |
DIP |
SOT |
- |
- |
DIP |
包装说明 |
IN-LINE, R-PDIP-T8 |
- |
IN-LINE, R-PDIP-T8 |
IN-LINE, R-GDIP-T8 |
SMALL OUTLINE, R-PDSO-G8 |
- |
- |
IN-LINE, R-PDIP-T8 |
针数 |
8 |
- |
8 |
8 |
8 |
- |
- |
8 |
Reach Compliance Code |
unknow |
- |
unknow |
unknow |
unknow |
- |
- |
unknow |
ECCN代码 |
EAR99 |
- |
EAR99 |
EAR99 |
EAR99 |
- |
- |
EAR99 |
其他特性 |
LOW THRESHOLD, HIGH INPUT IMPEDANCE |
- |
LOW THRESHOLD, HIGH INPUT IMPEDANCE |
LOW THRESHOLD, HIGH INPUT IMPEDANCE |
LOW THRESHOLD, HIGH INPUT IMPEDANCE |
- |
- |
LOW THRESHOLD, HIGH INPUT IMPEDANCE |
配置 |
COMMON SUBSTRATE, 2 ELEMENTS |
- |
COMMON SUBSTRATE, 2 ELEMENTS |
COMMON SUBSTRATE, 2 ELEMENTS |
COMMON SUBSTRATE, 2 ELEMENTS |
- |
- |
COMMON SUBSTRATE, 2 ELEMENTS |
最小漏源击穿电压 |
12 V |
- |
12 V |
12 V |
12 V |
- |
- |
12 V |
最大漏源导通电阻 |
75 Ω |
- |
75 Ω |
75 Ω |
75 Ω |
- |
- |
75 Ω |
FET 技术 |
METAL-OXIDE SEMICONDUCTOR |
- |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
- |
- |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 |
R-PDIP-T8 |
- |
R-PDIP-T8 |
R-GDIP-T8 |
R-PDSO-G8 |
- |
- |
R-PDIP-T8 |
JESD-609代码 |
e0 |
- |
e0 |
e0 |
e0 |
- |
- |
e0 |
元件数量 |
2 |
- |
2 |
2 |
2 |
- |
- |
2 |
端子数量 |
8 |
- |
8 |
8 |
8 |
- |
- |
8 |
工作模式 |
ENHANCEMENT MODE |
- |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
- |
- |
ENHANCEMENT MODE |
最高工作温度 |
70 °C |
- |
70 °C |
125 °C |
70 °C |
- |
- |
70 °C |
封装主体材料 |
PLASTIC/EPOXY |
- |
PLASTIC/EPOXY |
CERAMIC, GLASS-SEALED |
PLASTIC/EPOXY |
- |
- |
PLASTIC/EPOXY |
封装形状 |
RECTANGULAR |
- |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
- |
- |
RECTANGULAR |
封装形式 |
IN-LINE |
- |
IN-LINE |
IN-LINE |
SMALL OUTLINE |
- |
- |
IN-LINE |
峰值回流温度(摄氏度) |
NOT SPECIFIED |
- |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
- |
- |
NOT SPECIFIED |
极性/信道类型 |
N-CHANNEL |
- |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
- |
- |
N-CHANNEL |
最大功率耗散 (Abs) |
0.5 W |
- |
0.5 W |
0.5 W |
0.5 W |
- |
- |
0.5 W |
认证状态 |
Not Qualified |
- |
Not Qualified |
Not Qualified |
Not Qualified |
- |
- |
Not Qualified |
表面贴装 |
NO |
- |
NO |
NO |
YES |
- |
- |
NO |
端子面层 |
Tin/Lead (Sn/Pb) |
- |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
- |
- |
Tin/Lead (Sn/Pb) |
端子形式 |
THROUGH-HOLE |
- |
THROUGH-HOLE |
THROUGH-HOLE |
GULL WING |
- |
- |
THROUGH-HOLE |
端子位置 |
DUAL |
- |
DUAL |
DUAL |
DUAL |
- |
- |
DUAL |
处于峰值回流温度下的最长时间 |
NOT SPECIFIED |
- |
NOT SPECIFIED |
NOT SPECIFIED |
NOT SPECIFIED |
- |
- |
NOT SPECIFIED |
晶体管应用 |
SWITCHING |
- |
SWITCHING |
SWITCHING |
SWITCHING |
- |
- |
SWITCHING |
晶体管元件材料 |
SILICON |
- |
SILICON |
SILICON |
SILICON |
- |
- |
SILICON |