Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
厂商名称:ALD [Advanced Linear Devices]
下载文档型号 | ALD1106PBXXXX | ALD1106DBMXXXX | ALD1106SBXXXX | ALD1116PAXXXX | ALD1116DAMXXXX | ALD1116SAXXXX |
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描述 | Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 12V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
包装说明 | IN-LINE, R-PDIP-T14 | IN-LINE, R-CDIP-T14 | SMALL OUTLINE, R-PDSO-G14 | IN-LINE, R-PDIP-T8 | IN-LINE, R-CDIP-T8 | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE | LOW THRESHOLD, HIGH INPUT IMPEDANCE |
配置 | COMMON SUBSTRATE, 4 ELEMENTS | COMMON SUBSTRATE, 4 ELEMENTS | COMMON SUBSTRATE, 4 ELEMENTS | COMMON SUBSTRATE, 2 ELEMENTS | COMMON SUBSTRATE, 2 ELEMENTS | COMMON SUBSTRATE, 2 ELEMENTS |
最小漏源击穿电压 | 12 V | 12 V | 12 V | 12 V | 12 V | 12 V |
最大漏源导通电阻 | 500 Ω | 500 Ω | 500 Ω | 500 Ω | 500 Ω | 500 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDIP-T14 | R-CDIP-T14 | R-PDSO-G14 | R-PDIP-T8 | R-CDIP-T8 | R-PDSO-G8 |
元件数量 | 4 | 4 | 4 | 2 | 2 | 2 |
端子数量 | 14 | 14 | 14 | 8 | 8 | 8 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | YES | NO | NO | YES |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |