APM2324A
N-Channel Enhancement Mode MOSFET
Features
•
20V/3A ,
R
DS(ON)
=50mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=90mΩ(typ.) @ V
GS
=2.5V
Pin Description
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOT-23
D
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
S
N-Channel MOSFET
Ordering and Marking Information
APM2324
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
A : SOT-23
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM2324A :
M24X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
1
www.anpec.com.tw
APM2324A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θ
JA
*
Note:
*Surface Mounted on 1in
2
pad area, t
(T
A
= 25°C unless otherwise noted)
Rating
20
±10
V
GS
=4.5V
3
10
1
150
-55 to 150
T
A
=25°C
T
A
=100°C
0.83
0.3
150
W
°C/W
A
°C
V
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
≤
10sec.
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C unless otherwise noted)
APM2324A
Min.
Typ.
Max.
Test Condition
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=16V, V
GS
=0V
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=3A
V
GS
=2.5V, I
DS
=2A
I
SD
=0.5A, V
GS
=0V
20
1
0.5
0.7
50
90
0.7
1
±100
70
110
1.3
V
µA
V
nA
mΩ
V
R
DS(ON) a
Drain-Source On-state Resistance
V
SDa
Q
g
Q
gs
Q
gd
Diode Forward Voltage
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=10V, V
GS
=4.5V,
I
DS
=3A
5
0.7
0.7
6.5
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
2
www.anpec.com.tw
APM2324A
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM2324A
Min.
Typ.
Max.
Test Condition
Unit
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Notes:
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
5
255
70
50
6
15
11
24
15
5
12
6
Ω
pF
V
DD
=10V, I
DS
=1A,
V
GEN
=4.5V, R
G
=6Ω,
R
L
=10Ω
ns
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
3
www.anpec.com.tw
APM2324A
Typical Characteristics
Power Dissipation
1.0
4.0
Drain Current
0.8
3.2
0.6
I
D
- Drain Current (A)
o
P
tot
- Power (W)
2.4
0.4
1.6
0.2
T
A
=25 C
0.0
0
20
40
60
80 100 120 140 160
0.8
o
0.0
T
A
=25 C, V
G
=4.5V
0
20
40
60
80 100 120 140 160
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
30
10
2
1
Thermal Transient Impedance
I
D
- Drain Current (A)
Duty = 0.5
Rd
s(o
n)
Lim
it
1
300
µ
s
1ms
10ms
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 150 C/W
2
0.1
100ms
1s
DC
0.01
0.01
T
A
=25 C
0.1
1
10
100
o
0.01
1E-4
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
4
www.anpec.com.tw
APM2324A
Typical Characteristics (Cont.)
Output Characteristics
10
V
GS
= 3, 4, 5, 6, 7, 8, 9, 10V
0.12
0.14
V
GS
=2.5V
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (Ω)
8
I
D
- Drain Current (A)
0.10
0.08
0.06
0.04
0.02
0.00
6
4
2V
2
V
GS
=4.5V
0
0
2
4
6
8
10
0
2
4
6
8
10
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
10
9
8
Gate Threshold Voltage
1.8
I
DS
=250
µ
A
1.6
Normalized Threshold Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
I
D
- Drain Current (A)
7
6
5
4
3
2
1
T
j
=125 C
o
o
T
j
=25 C
T
j
=-55 C
o
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.3 - Sep., 2005
5
www.anpec.com.tw
