型号
- 型号
- 关键词
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
厂商名称：Infineon(英飞凌)
器件标准：
| 型号 | BSS138NE6327 | BSS138NE6433 |
|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 |
| 是否Rohs认证 | 符合 | 符合 |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) |
| 包装说明 | GREEN, PLASTIC PACKAGE-3 | GREEN, PLASTIC PACKAGE-3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | 60 V |
| 最大漏极电流 (Abs) (ID) | 0.23 A | 0.23 A |
| 最大漏极电流 (ID) | 0.23 A | 0.23 A |
| 最大漏源导通电阻 | 3.5 Ω | 3.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 3.8 pF | 3.8 pF |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 |
| 湿度敏感等级 | 1 | 1 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 0.36 W | 0.36 W |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 40 | 30 |
| 晶体管元件材料 | SILICON | SILICON |