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FHRC110

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:Fenghua (HK) Electronics Ltd

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器件参数
参数名称
属性值
厂商名称
Fenghua (HK) Electronics Ltd
零件包装代码
SOT-23
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
BUILT-IN BIAS RESISTORS
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
50 V
配置
SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
120
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
最大功率耗散 (Abs)
0.3 W
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
参数对比
与FHRC110相近的元器件有:FHRC114、FHRC112、FHRC111、FHRC113。描述及对比如下:
型号 FHRC110 FHRC114 FHRC112 FHRC111 FHRC113
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
厂商名称 Fenghua (HK) Electronics Ltd Fenghua (HK) Electronics Ltd Fenghua (HK) Electronics Ltd Fenghua (HK) Electronics Ltd Fenghua (HK) Electronics Ltd
零件包装代码 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
针数 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 120 120 120 120 120
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
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