型号
- 型号
- 关键词
9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
9 A, 900 V, 1.4 ohm, N沟道, 硅, POWER, 场效应管
厂商名称：Fairchild
厂商官网：http://www.fairchildsemi.com/
下载文档| 型号 | FQA9N90C_07 | FQA9N90C | FQA9N90C_F109 |
|---|---|---|---|
| 描述 | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 端子数量 | 3 | 3 | 3 |
| 端子形式 | THROUGH-孔 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | 单一的 | SINGLE | SINGLE |
| 元件数量 | 1 | 1 | 1 |
| 晶体管应用 | 开关 | SWITCHING | SWITCHING |
| 晶体管元件材料 | 硅 | SILICON | SILICON |
| 是否Rohs认证 | - | 符合 | 符合 |
| 厂商名称 | - | Fairchild | Fairchild |
| 零件包装代码 | - | TO-3P | TO-3PN |
| 包装说明 | - | TO-3P, 3 PIN | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | - | 3 | 3 |
| Reach Compliance Code | - | unknow | compli |
| ECCN代码 | - | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | - | 900 mJ | 900 mJ |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 900 V | 900 V |
| 最大漏极电流 (Abs) (ID) | - | 9 A | 9 A |
| 最大漏极电流 (ID) | - | 9 A | 9 A |
| 最大漏源导通电阻 | - | 1.4 Ω | 1.4 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | - | e3 | e3 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 150 °C | 150 °C |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | - | NOT APPLICABLE | NOT SPECIFIED |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 280 W | 280 W |
| 最大脉冲漏极电流 (IDM) | - | 36 A | 36 A |
| 认证状态 | - | Not Qualified | Not Qualified |
| 表面贴装 | - | NO | NO |
| 端子面层 | - | Matte Tin (Sn) | Matte Tin (Sn) |
| 处于峰值回流温度下的最长时间 | - | NOT APPLICABLE | NOT SPECIFIED |