型号
- 型号
- 关键词
9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
9 A, 900 V, 1.4 ohm, N沟道, 硅, POWER, 场效应管
厂商名称：Fairchild
厂商官网：http://www.fairchildsemi.com/
器件标准：
| 型号 | FQA9N90C_F109 | FQA9N90C | FQA9N90C_07 |
|---|---|---|---|
| 描述 | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-孔 |
| 端子位置 | SINGLE | SINGLE | 单一的 |
| 晶体管应用 | SWITCHING | SWITCHING | 开关 |
| 晶体管元件材料 | SILICON | SILICON | 硅 |
| 是否Rohs认证 | 符合 | 符合 | - |
| 厂商名称 | Fairchild | Fairchild | - |
| 零件包装代码 | TO-3PN | TO-3P | - |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | TO-3P, 3 PIN | - |
| 针数 | 3 | 3 | - |
| Reach Compliance Code | compli | unknow | - |
| ECCN代码 | EAR99 | EAR99 | - |
| 雪崩能效等级（Eas） | 900 mJ | 900 mJ | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| 最小漏源击穿电压 | 900 V | 900 V | - |
| 最大漏极电流 (Abs) (ID) | 9 A | 9 A | - |
| 最大漏极电流 (ID) | 9 A | 9 A | - |
| 最大漏源导通电阻 | 1.4 Ω | 1.4 Ω | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | - |
| JESD-609代码 | e3 | e3 | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 最高工作温度 | 150 °C | 150 °C | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | - |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT APPLICABLE | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | - |
| 最大功率耗散 (Abs) | 280 W | 280 W | - |
| 最大脉冲漏极电流 (IDM) | 36 A | 36 A | - |
| 认证状态 | Not Qualified | Not Qualified | - |
| 表面贴装 | NO | NO | - |
| 端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT APPLICABLE | - |
