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FQD9N25 / FQU9N25
— N-Channel QFET
®
MOSFET
October 2013
FQD9N25 / FQU9N25
N-Channel QFET
®
MOSFET
250
V,
.4
A,
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Ω
Features
•
7.4
A,
250
V, R
DS(on)
=
420 mΩ
(Max.)
@V
GS
= 10 V,
I
D
=
3.7
A
• Low Gate Charge (Typ.
15.5
nC)
• Low Crss (Typ.
15
pF)
• 100% Avalanche Tested
D
D
G
S
D-PAK
I-PAK
G
D
S
G
S
Absolute Maximum Ratings
T
Symbol
,
5
5
,
<
5
<
!$
7
C
= 25 C unless otherwise noted.
o
Parameter
,
2
.)*63
2
.0++63
7
FQD9N25TM
FQD9N25TM_F080
FQU9N25TU
)*+
&'
'&
)8 9
±;+
Unit
,
(
(
(
,
=
(
=
,$
@
@
@$6
6
6
:
,
7 (!
<
(!
-!(!
<
7 > -
!!$
7
2
.)*63?
7
2
.)*63
"!)*6
-
B
0$C
*
09*
&'
**
**
)*
**
+ ''
**A0*+
;++
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
