型号
- 型号
- 关键词
Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
厂商名称：Fairchild
厂商官网：http://www.fairchildsemi.com/
下载文档| 型号 | FRE264H | FRE264D | FRE264R |
|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA | Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA | Power Field-Effect Transistor, 23A I(D), 250V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA |
| 厂商名称 | Fairchild | Fairchild | Fairchild |
| 包装说明 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 250 V | 250 V | 250 V |
| 最大漏极电流 (ID) | 23 A | 23 A | 23 A |
| 最大漏源导通电阻 | 0.13 Ω | 0.13 Ω | 0.13 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-258AA | TO-258AA | TO-258AA |
| JESD-30 代码 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 69 A | 69 A | 69 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |