HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
Data Sheet
January 2000
File Number
4575.2
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are
Non-Punch Through
(NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Features
• 35A, 1200V, T
C
= 25
o
C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•
Thermal Impedance
SPICE Model
Temperature Compensating
SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Ordering Information
PART NUMBER
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS
PACKAGE
TO-247
TO-220AB
T0-263AB
BRAND
G10N120BN
10N120BN
10N120BN
Packaging
JEDEC STYLE TO-247
E
C
COLLECTOR
(FLANGE)
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNS9A.
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
E
G
C
G
E
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
1200
35
17
80
±20
±30
55A at 1200V
298
2.38
80
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/
o
C
mJ
o
C
o
C
o
C
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 20A, L = 400µH, T
J
= 25
o
C.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 10Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
MIN
1200
15
-
-
-
-
-
6.0
-
55
TYP
-
-
-
150
-
2.45
3.7
6.8
-
-
MAX
-
-
250
-
2
2.7
4.2
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 10A,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
I
C
= 90µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C, R
G
=
10Ω,
V
GE
= 15V,
L = 400µH, V
CE(PK)
= 1200V
I
C
= 10A, V
CE
= 0.5 BV
CES
I
C
= 10A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
-
-
-
10.4
100
130
-
120
150
V
nC
nC
2
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 5)
Turn-On Energy (Note 5)
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
NOTES:
4. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 18.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
IGBT and Diode at T
J
= 150
o
C
I
CE
= 10A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10Ω
L = 2mH
Test Circuit (Figure 18)
TEST CONDITIONS
IGBT and Diode at T
J
= 25
o
C
I
CE
= 10A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10Ω
L = 2mH
Test Circuit (Figure 18)
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
23
11
165
100
0.32
0.85
0.8
21
11
190
140
0.4
1.75
1.1
-
MAX
26
15
210
140
0.4
1.1
1.0
25
15
250
200
0.5
2.3
1.4
0.42
UNITS
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
o
C/W
Typical Performance Curves
35
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
60
50
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 400µH
40
30
20
10
0
0
200
400
600
800
1000
1200
1400
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
= 15V
30
25
20
15
10
5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves
f
MAX
, OPERATING FREQUENCY (kHz)
Unless Otherwise Specified
(Continued)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
25
250
T
J
= 150
o
C, R
G
= 10Ω, L = 2mH, V
CE
= 960V
100
50
T
C
= 75
o
C, V
GE
= 15V, IDEAL DIODE
V
CE
= 840V, R
G
= 10Ω, T
J
= 125
o
C
20
t
SC
15
I
SC
200
150
10
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.42
o
C/W, SEE NOTES
2
5
T
C
75
o
C
75
o
C
110
o
C
110
o
C
V
GE
15V
12V
15V
12V
20
10
100
1
10
5
12
13
14
15
16
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
DUTY CYCLE <0.5%, V
GE
= 12V
PULSE DURATION = 250µs
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
T
C
= -55
o
C
T
C
= 25
o
C
40
30
T
C
= -55
o
C
20
T
C
= 150
o
C
10
T
C
= 25
o
C
30
T
C
= 150
o
C
20
10
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
0
0
2
4
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0
2
4
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
E
ON2
, TURN-ON ENERGY LOSS (mJ)
R
G
= 10Ω, L = 2mH, V
CE
= 960V
4
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
3
2.0
R
G
= 10Ω, L = 2mH, V
CE
= 960V
1.5
T
J
= 150
o
C, V
GE
= 12V OR 15V
1.0
T
J
= 25
o
C, V
GE
= 12V OR 15V
0.5
2
1
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
0
5
10
15
20
0
0
5
10
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
20
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves
40
R
G
= 10Ω, L = 2mH, V
CE
= 960V
t
dI
, TURN-ON DELAY TIME (ns)
35
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
Unless Otherwise Specified
(Continued)
50
R
G
= 10Ω, L = 2mH, V
CE
= 960V
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
30
30
25
20
20
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
15
0
5
10
15
20
10
T
J
= 25
o
C OR T
J
= 150
o
C, V
GE
= 15V
0
0
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 10Ω, L = 2mH, V
CE
= 960V
350
300
R
G
= 10Ω, L = 2mH, V
CE
= 960V
250
300
250
200
150
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
t
fI
, FALL TIME (ns)
200
T
J
= 150
o
C, V
GE
= 12V OR 15V
150
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
T
J
= 25
o
C, V
GE
= 12V OR 15V
50
0
5
10
15
20
0
5
10
15
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE <0.5%, V
CE
= 20V
PULSE DURATION = 250µs
80
20
I
G (REF)
= 1mA, R
L
= 60Ω, T
C
= 25
o
C
15
V
CE
= 1200V
V
CE
= 800V
60
10
V
CE
= 400V
5
40
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= -55
o
C
20
0
7
8
9
10
11
12
13
14
15
0
0
20
40
60
80
100
120
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
