型号
- 型号
- 关键词
Instrumentation Amplifier, 1 Func, CMOS, CDIP18
厂商名称：General Electric Solid State
下载文档| 型号 | ICL7606MJN/883B | ICL7606CJN | ICL7606IJN | ICL7606MJN/C | ICL7605CJN | ICL7605IJN | ICL7605MJN | ICL7605MJN/883B | ICL7605MJN/883C |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18, | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 | Instrumentation Amplifier, 1 Func, CMOS, CDIP18 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State | General Electric Solid State |
| 包装说明 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 放大器类型 | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER | INSTRUMENTATION AMPLIFIER |
| JESD-30 代码 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| 最高工作温度 | 125 °C | 70 °C | 85 °C | 125 °C | 70 °C | 85 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | - | -25 °C | -55 °C | - | -25 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | OTHER | MILITARY | COMMERCIAL | OTHER | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 标称负供电电压 (Vsup) | - | - | - | - | -5 V | -5 V | -5 V | -5 V | -5 V |
| 电源 | - | - | - | - | +-5 V | +-5 V | +-5 V | +-5 V | +-5 V |
| 标称供电电压 (Vsup) | - | - | - | - | 5 V | 5 V | 5 V | 5 V | 5 V |
