TrenchStop Series
®
IGW15T120
Low Loss IGBT in TrenchStop
®
and Fieldstop technology
C
•
•
•
•
•
•
•
•
•
•
Approx. 1.0V reduced V
CE(sat)
compared to BUP313
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
®
TrenchStop and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
1200V
I
C
15A
V
CE(sat),Tj=25°C
1.7V
T
j,max
150°C
Marking Code
G15T120
Package
G
E
PG-TO-247-3
Type
IGW15T120
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
T
stg
-
-40...+150
-55...+150
260
°C
P
tot
110
W
V
GE
t
SC
±20
10
V
µs
I
Cpuls
-
Symbol
V
CE
I
C
30
15
45
45
Value
1200
Unit
V
A
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.5
Nov. 09
Power Semiconductors
TrenchStop Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V,
I
C
= 0. 5mA
V
CE(sat)
V
G E
= 15V,
I
C
= 15A
T
j
= 25° C
T
j
= 12 5° C
T
j
= 15 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 0. 6mA,
V
C E
=
V
G E
V
C E
= 1200V
,
V
G E
= 0V
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
V
G E
= 1 5V,t
S C
≤10µs
V
C C
= 600V,
T
j
= 25° C
-
90
-
A
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
= 25V,
V
G E
= 0V,
f=
1 M Hz
V
C C
= 9 60V,
I
C
= 15A
V
G E
= 1 5V
-
13
-
nH
-
-
-
-
1100
100
50
85
-
-
-
-
nC
pF
I
GES
g
fs
R
Gint
V
C E
= 0V ,V
G E
= 2 0V
V
C E
= 20V,
I
C
= 15A
-
-
-
-
-
-
-
10
none
0.2
2.0
100
-
nA
S
Ω
-
-
-
5.0
1.7
2.0
2.2
5.8
2.2
-
-
6.5
mA
1200
-
-
V
Symbol
Conditions
Value
min.
typ.
max.
Unit
R
thJA
40
R
thJC
1.1
K/W
Symbol
Conditions
Max. Value
Unit
®
IGW15T120
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.5
Nov. 09
Power Semiconductors
TrenchStop Series
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25° C,
V
C C
= 6 00V,
I
C
= 15A,
V
G E
= 0/ 1 5V ,
R
G
= 5 6Ω ,
L
σ
2 )
= 180nH,
C
σ
2 )
=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
50
30
520
60
1.3
1.4
2.7
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
®
IGW15T120
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 15 0° C,
V
C C
= 6 00V,
I
C
= 15A,
V
G E
= 0/ 1 5V ,
R
G
= 56Ω
2)
L
σ
= 180nH,
C
σ
2 )
=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
50
35
600
120
2.0
2.1
4.1
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.5
Nov. 09
Power Semiconductors
TrenchStop Series
®
IGW15T120
t
p
=2µs
40A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
30A
T
C
=80°C
10A
10µs
20A
T
C
=110°C
50µs
1A
150µs
500µs
20ms
I
c
10A
I
c
0,1A
1V
DC
10V
100V
0A
10Hz
100Hz
1kHz
10kHz
100kHz
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 600V,
V
GE
= 0/+15V,
R
G
= 56Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤150°C;V
GE
=15V)
100W
I
C
,
COLLECTOR CURRENT
POWER DISSIPATION
80W
20A
60W
P
tot
,
40W
10A
20W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≥
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev. 2.5
Nov. 09
TrenchStop Series
®
IGW15T120
40A
V
GE
=17V
30A
15V
13V
11V
20A
9V
7V
10A
40A
V
GE
=17V
30A
15V
13V
11V
20A
9V
7V
10A
I
C
,
COLLECTOR CURRENT
0A
0V
1V
2V
3V
4V
5V
6V
I
C
,
COLLECTOR CURRENT
0A
0V
1V
2V
3V
4V
5V
6V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 150°C)
40A
35A
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
-50°C
I
C
=30A
I
C
,
COLLECTOR CURRENT
30A
25A
20A
15A
10A
5A
0A
0V
2V
4V
6V
8V
10V
12V
T
J
=150°C
25°C
I
C
=15A
I
C
=8A
I
C
=5A
0°C
50°C
100°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev. 2.5
Nov. 09
stm32/stm8
