描述 |
Power Field-Effect Transistor, TO-220, FULL PACK-3 |
MOSFET HIGH POWER_LEGACY |
MOSFET HIGH POWER_LEGACY |
MOSFET N-CH 650V 31.2A TO220 |
漏源电压(Vdss):650V 连续漏极电流(Id)(25°C 时):31.2A(Tc) 栅源极阈值电压:4.5V @ 1.3mA 漏源导通电阻:110mΩ @ 12.7A,10V 最大功率耗散(Ta=25°C):277.8W(Tc) 类型:N沟道 |
Power Field-Effect Transistor, |
Power Field-Effect Transistor, |
Power Field-Effect Transistor, TO-263, D2PAK-3 |
是否Rohs认证 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
符合 |
包装说明 |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
IN-LINE, R-PSIP-T3 |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code |
compliant |
compliant |
compliant |
compliant |
compliant |
compliant |
unknown |
compliant |
雪崩能效等级(Eas) |
845 mJ |
845 mJ |
845 mJ |
845 mJ |
845 mJ |
845 mJ |
845 mJ |
845 mJ |
配置 |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 |
650 V |
650 V |
650 V |
650 V |
650 V |
650 V |
650 V |
650 V |
最大漏极电流 (Abs) (ID) |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
最大漏极电流 (ID) |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
31.2 A |
最大漏源导通电阻 |
0.11 Ω |
0.11 Ω |
0.11 Ω |
0.11 Ω |
0.11 Ω |
0.11 Ω |
0.11 Ω |
0.11 Ω |
FET 技术 |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 |
TO-220AB |
TO-220AB |
TO-262AA |
TO-220AB |
TO-247 |
TO-247 |
TO-220AB |
TO-263AB |
JESD-30 代码 |
R-PSFM-T3 |
R-PSFM-T3 |
R-PSIP-T3 |
R-PSFM-T3 |
R-PSFM-T3 |
R-PSFM-T3 |
R-PSFM-T3 |
R-PSSO-G2 |
元件数量 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
1 |
端子数量 |
3 |
3 |
3 |
3 |
3 |
3 |
3 |
2 |
工作模式 |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
最高工作温度 |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
150 °C |
最低工作温度 |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
-55 °C |
封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
封装形状 |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
封装形式 |
FLANGE MOUNT |
FLANGE MOUNT |
IN-LINE |
FLANGE MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
FLANGE MOUNT |
SMALL OUTLINE |
极性/信道类型 |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
最大脉冲漏极电流 (IDM) |
99.6 A |
99.6 A |
99.6 A |
99.6 A |
99.6 A |
99.6 A |
99.6 A |
99.6 A |
表面贴装 |
NO |
NO |
NO |
NO |
NO |
NO |
NO |
YES |
端子形式 |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
GULL WING |
端子位置 |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
SINGLE |
晶体管应用 |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
SWITCHING |
晶体管元件材料 |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
SILICON |
Factory Lead Time |
18 weeks |
18 weeks |
1 week |
18 weeks |
- |
- |
- |
18 weeks |
最大功率耗散 (Abs) |
34.7 W |
277.8 W |
277.8 W |
34.7 W |
277.8 W |
277.8 W |
277.8 W |
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