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IPA65R110CFDXKSA2

Power Field-Effect Transistor, TO-220, FULL PACK-3

器件类别:分立半导体    晶体管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
Factory Lead Time
18 weeks
雪崩能效等级(Eas)
845 mJ
外壳连接
ISOLATED
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
650 V
最大漏极电流 (Abs) (ID)
31.2 A
最大漏极电流 (ID)
31.2 A
最大漏源导通电阻
0.11 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
N-CHANNEL
最大功率耗散 (Abs)
34.7 W
最大脉冲漏极电流 (IDM)
99.6 A
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
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参数对比
与IPA65R110CFDXKSA2相近的元器件有:IPP65R110CFDXKSA1、IPI65R110CFDXKSA1、IPA65R110CFDXKSA1、IPW65R110CFD、IPW65R110CFDFKSA2、IPP65R110CFDXKSA2、IPB65R110CFDATMA2。描述及对比如下:
型号 IPA65R110CFDXKSA2 IPP65R110CFDXKSA1 IPI65R110CFDXKSA1 IPA65R110CFDXKSA1 IPW65R110CFD IPW65R110CFDFKSA2 IPP65R110CFDXKSA2 IPB65R110CFDATMA2
描述 Power Field-Effect Transistor, TO-220, FULL PACK-3 MOSFET HIGH POWER_LEGACY MOSFET HIGH POWER_LEGACY MOSFET N-CH 650V 31.2A TO220 漏源电压(Vdss):650V 连续漏极电流(Id)(25°C 时):31.2A(Tc) 栅源极阈值电压:4.5V @ 1.3mA 漏源导通电阻:110mΩ @ 12.7A,10V 最大功率耗散(Ta=25°C):277.8W(Tc) 类型:N沟道 Power Field-Effect Transistor, Power Field-Effect Transistor, Power Field-Effect Transistor, TO-263, D2PAK-3
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant compliant compliant compliant compliant compliant unknown compliant
雪崩能效等级(Eas) 845 mJ 845 mJ 845 mJ 845 mJ 845 mJ 845 mJ 845 mJ 845 mJ
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
最大漏极电流 (Abs) (ID) 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A
最大漏极电流 (ID) 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A 31.2 A
最大漏源导通电阻 0.11 Ω 0.11 Ω 0.11 Ω 0.11 Ω 0.11 Ω 0.11 Ω 0.11 Ω 0.11 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-220AB TO-220AB TO-262AA TO-220AB TO-247 TO-247 TO-220AB TO-263AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSIP-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSSO-G2
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT IN-LINE FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT SMALL OUTLINE
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 99.6 A 99.6 A 99.6 A 99.6 A 99.6 A 99.6 A 99.6 A 99.6 A
表面贴装 NO NO NO NO NO NO NO YES
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Factory Lead Time 18 weeks 18 weeks 1 week 18 weeks - - - 18 weeks
最大功率耗散 (Abs) 34.7 W 277.8 W 277.8 W 34.7 W 277.8 W 277.8 W 277.8 W -
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