IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
OptiMOS
®
-T
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
2.0
120
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
IPB120N04S3-02
IPI120N04S3-02
IPP120N04S3-02
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3PN0402
3PN0402
3PN0402
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=80 A
Value
120
120
480
1880
±20
300
-55 ... +175
55/175/56
mJ
V
W
°C
Unit
A
Rev. 1.0
page 1
2007-04-30
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=230 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=80 A
V
GS
=10 V,
I
D
=80 A,
SMD version
40
2.1
-
-
3.0
-
-
4.0
1
µA
V
-
-
-
-
-
-
-
-
0.5
62
62
40
K/W
Values
typ.
max.
Unit
-
-
-
-
-
-
1.65
1.35
100
100
2.3
2
nA
mΩ
Rev. 1.0
page 2
2007-04-30
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
2)
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
1)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=1.3
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
11000
3000
470
35
19
57
18
14300 pF
3900
710
-
-
-
-
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32 V,
I
D
=80 A,
V
GS
=0 to 10 V
-
-
-
-
54
38
160
5
70
67
210
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.83
70
145
120
480
1.2
-
-
A
V
ns
nC
Current is limited by bondwire; with an
R
thJC
= 0.5 K/W the chip is able to carry 306 A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
2)
3)
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2007-04-30
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V
350
140
300
120
250
100
P
tot
[W]
200
80
150
I
D
[A]
0
50
100
150
200
60
100
40
50
20
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
1 µs
10 µs
100 µs
1 ms
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
10
0
0.5
100
Z
thJC
[K/W]
I
D
[A]
10
-1
0.1
0.05
10
10
-2
0.01
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2007-04-30
IPB120N04S3-02
IPI120N04S3-02, IPP120N04S3-02
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
500
10 V
7V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
8
7
6
5
5V
5.5 V
6V
6.5 V
400
6V
R
DS(on)
[mΩ]
300
I
D
[A]
4
3
7V
200
5.5 V
2
100
5V
10 V
1
0
0
0
1
2
3
4
5
6
0
100
200
300
400
500
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
400
350
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 80 A;
V
GS
= 10 V; SMD
3
2.5
300
250
R
DS(on)
[m
Ω
]
175 °C
25 °C
-55 °C
2
I
D
[A]
200
150
100
50
0
2
3
4
5
6
7
1.5
1
0.5
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2007-04-30
嵌入式系统
