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IRGC25B120UBPBF

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

器件类别:分立半导体    晶体管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
DIE
包装说明
UNCASED CHIP, O-XUUC-N
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
集电极-发射极最大电压
1200 V
配置
SINGLE
JESD-30 代码
O-XUUC-N
元件数量
1
端子数量
2
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
UNCASED CHIP
峰值回流温度(摄氏度)
260
极性/信道类型
N-CHANNEL
认证状态
Not Qualified
表面贴装
YES
端子形式
NO LEAD
端子位置
UPPER
处于峰值回流温度下的最长时间
40
晶体管应用
POWER CONTROL
晶体管元件材料
SILICON
文档预览
PD - 93867
IRGC25B120UB
Die in Wafer Form
Features
GEN5 Non Punch Through (NPT) Technology
UltraFast
10
µ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benchmark Efficiency above 20KHz
Optimized for Welding, UPS, and Induction Heating
Rugged with UltraFast Performance
Excellent Current Sharing in Parallel Operation
C
Benefits
G
E
1200V
I
C(nom)
=25A
V
CE(on) typ.
=3.37V @
I
C(nom)
@ 25°C
UltraFast IGBT
Short Circuit Rated
150mm Wafer
Electrical Characteristics (Wafer Form)
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Guaranteed (min, max)
Collector-to-Emitter Saturation Voltage
2.3V min, 2.7V max
Colletor-to-Emitter Breakdown Voltage
1200V min
Gate Threshold Voltage
4.4V min, 6.0V max
Zero Gate Voltage Collector Current
10µA max
Gate-to-Emitter Leakage Current
± 1.1µA max
Test Conditions
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 250µA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 250µA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.257" x 0.260"
150mm, with std. < 100 > flat
185µm, +/-15µm
01-5376
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
6.53
[.257]
5.104
[.201]
NOTES:
1. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
2. CONT ROLLING DIMENS ION: [INCH].
3. LET TER DES IGNAT ION:
S = SOURCE
G = GAT E
S K = S OURCE KELVIN
IS = CURRENT S ENS E
E = EMIT T ER
4. DIMENSIONAL T OLERANCES :
EMITTER
5.125
[.202]
6.60
[.260]
BONDING PADS :
WIDT H
&
LENGT H
OVERALL DIE:
< 0.635 TOLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE = + /- 0.025
> [.0250] TOLERANCE = + /- [.0010]
< 1.270 TOLERANCE = + /- 0.102
< [.050] T OLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] T OLERANCE = + /- [.008]
G
0.961
[.038]
WIDT H
1.006
[.039]
&
01-5376
LENGT H
www.irf.com
2/14/2000
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参数对比
与IRGC25B120UBPBF相近的元器件有:。描述及对比如下:
型号 IRGC25B120UBPBF
描述 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
是否无铅 不含铅
是否Rohs认证 符合
厂商名称 International Rectifier ( Infineon )
零件包装代码 DIE
包装说明 UNCASED CHIP, O-XUUC-N
针数 2
Reach Compliance Code compliant
ECCN代码 EAR99
集电极-发射极最大电压 1200 V
配置 SINGLE
JESD-30 代码 O-XUUC-N
元件数量 1
端子数量 2
封装主体材料 UNSPECIFIED
封装形状 ROUND
封装形式 UNCASED CHIP
峰值回流温度(摄氏度) 260
极性/信道类型 N-CHANNEL
认证状态 Not Qualified
表面贴装 YES
端子形式 NO LEAD
端子位置 UPPER
处于峰值回流温度下的最长时间 40
晶体管应用 POWER CONTROL
晶体管元件材料 SILICON
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