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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 2 September 2009.

INCH-POUND

MIL-PRF-19500/564H

2 June 2009

SUPERSEDING

MIL-PRF-19500/564G

13 June 2005

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,

TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,

MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as

specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

* 1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), 2 (LCC), and figures 3 and 4 for JANHC and

JANKC die dimensions.

* 1.3 Maximum ratings. Unless otherwise specified, T

= +25C.

Type

(1)



(2)

+25C +25C

(3) (4) I

(3) (4)

+25C

+100C

(5)

and T

STG

2N6849, 2N6849U

2N6851, 2N6851U

(1)

(2)

(3)

0.8

C/W

V dc

5.0

-100

-200

V dc

-100

-200

V dc

20

A dc

-6.5

-4.0

A dc

-4.1

-2.4

A dc

-6.5

-4.0

A (pk)

-25

-20

C

-55 to +150

Derate linearly by 0.2 W/C for T

> +25C.

See figure 5, thermal impedance curves.

The following formula derives the maximum theoretical I

spec. I

is limited by package and device

construction.

- T









( on ) at T



See figure 6, maximum drain current graphs.

= 4 x I

as calculated in note 2.

(4)

(5)

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

Semiconductor@dscc.dla.mil.

Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at

http://assist.daps.dla.mil/.

AMSC N/A

FSC 5961

MIL-PRF-19500/564H

1.4 Primary electrical characteristics. Unless otherwise specified, T

= +25C.

Type

Min V

(BR)DSS

= 0

= -1 mA dc

GS(th)1



= -0.25 mA

Max I

DSS1

= 0

= 80

percent

of rated V

A

-25

Max r

DS(on)1

(1)

= -10 V dc

= I

= +25C

ohm

0.30

0.80

= +150C

ohm

0.60

1.68

V dc

2N6849, 2N6849U

2N6851, 2N6851U

-100

-200

V dc

Min Max

-2.0

-4.0

(1) Pulsed, (see 4.5.1).

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

(Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

http://assist.daps.dla.mil/

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

MIL-PRF-19500/564H

Ltr



Dimensions

Inches

Millimeters

Min

Max

Min

Max

.305

.335

7.75

8.51

.160

.180

4.07

4.57

.335

.370

8.51

9.39

.200 TP

5.08 TP

.016

.021

0.41

0.53

.500

.750

12.7

19.05

.016

.019

0.41

0.48

.050

1.27

.250

6.35

.100

2.54

.050

1.27

.010

0.25

.029

.045

0.74

1.14

.028

.034

0.72

0.86

45 TP

Notes

7, 8

NOTES:

1. Dimensions are in inches. Millimeters are given for general information only.

2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 (0.28 mm).

3. Dimension TL measured from maximum HD.

4. Outline in this zone is not controlled.

5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic

handling.

6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007

(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

7. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1

and beyond LL minimum.

8. All three leads.

9. Radius (r) applies to both inside corners of tab.

10. Drain is electrically connected to the case.

11. In accordance with ASME Y14.5M, diameters are equivalent to

x

symbology.

12. Lead 1 = source, lead 2 = gate, lead 3 = drain.

FIGURE 1. Physical dimensions for TO-205AF (2N6849 and 2N6851).

MIL-PRF-19500/564H

Dimensions

Inches

Sym.

Min

Max

.345

.360

.280

.295

.095

.115

.040

.055

.065

.050 BSC

.025 BSC

.008 BSC

.020

.030

.105 REF

.120 REF

.045

.055

.070

.080

.120

.130

Millimeters

Min

Max

8.77

9.14

7.11

7.49

2.41

2.92

1.02

1.40

1.65

1.27 BSC

0.635 BSC

0.203 BSC

0.51

0.76

2.67 REF

3.05 REF

1.14

1.40

1.78

2.03

3.05

3.30

LL1

LL2

LS1

LS2

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to

x

symbology.

FIGURE 2. Physical dimensions for LCC (2N6849U and 2N6851U).

MIL-PRF-19500/564H

2N6849 and 2N6851

Dimensions

2N6849

Ltr

Inches

Min

Max

.106

.122

.172

.188

.021

.029

.035

.043

.028

.036

.014

.022

Millimeters

Min

Max

2.69

3.10

4.37

4.78

0.53

0.74

0.89

1.09

0.71

0.91

0.36

0.56

2N6851

Inches

Min

Max

.108

.124

.173

.189

.022

.030

.038

.021

.029

.012

.020

Millimeters

Min

Max

2.74

3.15

4.39

4.80

0.56

0.76

0.97

0.53

0.74

0.30

0.51

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The physical characteristics of the die are: The back metals are chromium,

nickel, and silver and comprise the drain. The top metal is aluminum.

4. Die thickness is .0187 inch (0.475 mm), the tolerance is

.0050

inch (0.13 mm).

FIGURE 3. JANHCA and JANKCA die dimensions.

参数对比

与JANS2N6849U相近的元器件有：JANKCA2N6851、JANTXV2N6851、JANTXV2N6849U、JANTXV2N6851U、JANTX2N6851U、JANS2N6851、JANHCA2N6851、JANHCA2N6849、JANKCA2N6849。描述及对比如下：

型号	JANS2N6849U	JANKCA2N6851	JANTXV2N6851	JANTXV2N6849U	JANTXV2N6851U	JANTX2N6851U	JANS2N6851	JANHCA2N6851	JANHCA2N6849	JANKCA2N6849
描述	Transistor	Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18	Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18	Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3	Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	,	DIE-3	CYLINDRICAL, O-MBCY-W3	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15	CYLINDRICAL, O-MBCY-W3	DIE-3	DIE-3	DIE-3
Reach Compliance Code	unknow	compli	compli	compli	compli	compli	compli	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
配置	Single	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	SINGLE
最大漏极电流 (Abs) (ID)	6.5 A	4 A	4 A	6.5 A	4 A	4 A	4 A	4 A	6.5 A	6.5 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
最大功率耗散 (Abs)	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W
表面贴装	YES	YES	NO	YES	YES	YES	NO	YES	YES	YES
JESD-609代码	e0	-	e0	e0	e0	e0	e0	e0	e0	-
端子面层	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Base Number Matches	1	1	1	1	1	1	1	-	-	-
外壳连接	-	DRAIN	-	SOURCE	SOURCE	SOURCE	-	DRAIN	DRAIN	DRAIN
最小漏源击穿电压	-	200 V	200 V	100 V	200 V	200 V	200 V	200 V	100 V	100 V
最大漏极电流 (ID)	-	4 A	4 A	6.5 A	4 A	4 A	4 A	4 A	6.5 A	6.5 A
JESD-30 代码	-	R-XUUC-N3	O-MBCY-W3	R-CQCC-N15	R-CQCC-N15	R-CQCC-N15	O-MBCY-W3	R-XUUC-N3	R-XUUC-N3	R-XUUC-N3
元件数量	-	1	1	1	1	1	1	1	1	1
端子数量	-	3	3	15	15	15	3	3	3	3
封装主体材料	-	UNSPECIFIED	METAL	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	METAL	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	-	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	UNCASED CHIP	CYLINDRICAL	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CYLINDRICAL	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	-	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
参考标准	-	MIL-19500/564F	MIL-19500/564	MIL-19500/564	MIL-19500/564	MIL-19500/564	MIL-19500/564	MIL-19500/564F	MIL-19500/564F	MIL-19500/564F
端子形式	-	NO LEAD	WIRE	NO LEAD	NO LEAD	NO LEAD	WIRE	NO LEAD	NO LEAD	NO LEAD
端子位置	-	UPPER	BOTTOM	QUAD	QUAD	QUAD	BOTTOM	UPPER	UPPER	UPPER
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON