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JANTXV2N6851U

Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18

器件类别：分立半导体    晶体管   

厂商名称：Infineon(英飞凌)

厂商官网：http://www.infineon.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
CHIP CARRIER, R-CQCC-N15
Reach Compliance Code
compli
ECCN代码
EAR99
雪崩能效等级（Eas）
171 mJ
外壳连接
SOURCE
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
200 V
最大漏极电流 (Abs) (ID)
4 A
最大漏极电流 (ID)
4 A
最大漏源导通电阻
1.68 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-CQCC-N15
JESD-609代码
e0
元件数量
1
端子数量
15
工作模式
ENHANCEMENT MODE
最高工作温度
150 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
P-CHANNEL
最大功率耗散 (Abs)
25 W
最大脉冲漏极电流 (IDM)
16 A
认证状态
Qualified
参考标准
MIL-19500/564
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
NO LEAD
端子位置
QUAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 2 September 2009.
INCH-POUND
MIL-PRF-19500/564H
2 June 2009
SUPERSEDING
MIL-PRF-19500/564G
13 June 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,
TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
* 1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), 2 (LCC), and figures 3 and 4 for JANHC and
JANKC die dimensions.
* 1.3 Maximum ratings. Unless otherwise specified, T
C
= +25C.
Type
P
T
(1)
P
T
R
JC
T
C
=
T
A
=
(2)
+25C +25C
V
DS
V
DG
V
GS
I
D1
(3) (4) I
D2
(3) (4)
T
C
=
T
C
=
+25C
+100C
I
S
I
DM
(5)
T
J
and T
STG
W
2N6849, 2N6849U
2N6851, 2N6851U
(1)
(2)
(3)
25
25
W
0.8
0.8
C/W
V dc
5.0
5.0
-100
-200
V dc
-100
-200
V dc
20
20
A dc
-6.5
-4.0
A dc
-4.1
-2.4
A dc
-6.5
-4.0
A (pk)
-25
-20
C
-55 to +150
-55 to +150
Derate linearly by 0.2 W/C for T
C
> +25C.
See figure 5, thermal impedance curves.
The following formula derives the maximum theoretical I
D
spec. I
D
is limited by package and device
construction.
T
JM
- T
C
I
D
=
R
JC
x
R
DS
( on ) at T
JM
See figure 6, maximum drain current graphs.
I
DM
= 4 x I
D1
as calculated in note 2.
(4)
(5)
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/564H
1.4 Primary electrical characteristics. Unless otherwise specified, T
C
= +25C.
Type
Min V
(BR)DSS
V
GS
= 0
I
D
= -1 mA dc
V
GS(th)1
V
DS
V
GS
I
D
= -0.25 mA
Max I
DSS1
V
GS
= 0
V
DS
= 80
percent
of rated V
DS
A
dc
-25
-25
Max r
DS(on)1
(1)
V
GS
= -10 V dc
I
D
= I
D2
T
J
= +25C
ohm
0.30
0.80
T
J
= +150C
ohm
0.60
1.68
V dc
2N6849, 2N6849U
2N6851, 2N6851U
-100
-200
V dc
Min Max
-2.0
-2.0
-4.0
-4.0
(1) Pulsed, (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/564H
Ltr
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
r
TL
TW
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.160
.180
4.07
4.57
.335
.370
8.51
9.39
.200 TP
5.08 TP
.016
.021
0.41
0.53
.500
.750
12.7
19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.010
0.25
.029
.045
0.74
1.14
.028
.034
0.72
0.86
45 TP
45 TP
Notes
6
7, 8
7, 8
7, 8
7, 8
7, 8
5
4
9
3
2
6
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
3. Dimension TL measured from maximum HD.
4. Outline in this zone is not controlled.
5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
11. In accordance with ASME Y14.5M, diameters are equivalent to
x
symbology.
12. Lead 1 = source, lead 2 = gate, lead 3 = drain.
FIGURE 1. Physical dimensions for TO-205AF (2N6849 and 2N6851).
3
MIL-PRF-19500/564H
Dimensions
Inches
Sym.
Min
Max
.345
.360
.280
.295
.095
.115
.040
.055
.055
.065
.050 BSC
.025 BSC
.008 BSC
.020
.030
.105 REF
.120 REF
.045
.055
.070
.080
.120
.130
Millimeters
Min
Max
8.77
9.14
7.11
7.49
2.41
2.92
1.02
1.40
1.40
1.65
1.27 BSC
0.635 BSC
0.203 BSC
0.51
0.76
2.67 REF
3.05 REF
1.14
1.40
1.78
2.03
3.05
3.30
18
1
BL
BW
CH
LL1
LL2
LS
LS1
LS2
LW
Q1
Q2
Q3
TL
TW
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
x
symbology.
FIGURE 2. Physical dimensions for LCC (2N6849U and 2N6851U).
4
MIL-PRF-19500/564H
2N6849 and 2N6851
Dimensions
2N6849
Ltr
A
B
C
D
E
F
Inches
Min
Max
.106
.122
.172
.188
.021
.029
.035
.043
.028
.036
.014
.022
Millimeters
Min
Max
2.69
3.10
4.37
4.78
0.53
0.74
0.89
1.09
0.71
0.91
0.36
0.56
2N6851
Inches
Min
Max
.108
.124
.173
.189
.022
.030
.030
.038
.021
.029
.012
.020
Millimeters
Min
Max
2.74
3.15
4.39
4.80
0.56
0.76
0.76
0.97
0.53
0.74
0.30
0.51
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics of the die are: The back metals are chromium,
nickel, and silver and comprise the drain. The top metal is aluminum.
4. Die thickness is .0187 inch (0.475 mm), the tolerance is
.0050
inch (0.13 mm).
FIGURE 3. JANHCA and JANKCA die dimensions.
5
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参数对比
与JANTXV2N6851U相近的元器件有：JANS2N6849U、JANKCA2N6851、JANTXV2N6851、JANTXV2N6849U、JANTX2N6851U、JANS2N6851、JANHCA2N6851、JANHCA2N6849、JANKCA2N6849。描述及对比如下：
型号 JANTXV2N6851U JANS2N6849U JANKCA2N6851 JANTXV2N6851 JANTXV2N6849U JANTX2N6851U JANS2N6851 JANHCA2N6851 JANHCA2N6849 JANKCA2N6849
描述 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 Transistor Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-18 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Small Signal Field-Effect Transistor, 6.5A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
包装说明 CHIP CARRIER, R-CQCC-N15 , DIE-3 CYLINDRICAL, O-MBCY-W3 CHIP CARRIER, R-CQCC-N15 CHIP CARRIER, R-CQCC-N15 CYLINDRICAL, O-MBCY-W3 DIE-3 DIE-3 DIE-3
Reach Compliance Code compli unknow compli compli compli compli compli unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE WITH BUILT-IN DIODE Single SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE SINGLE
最大漏极电流 (Abs) (ID) 4 A 6.5 A 4 A 4 A 6.5 A 4 A 4 A 4 A 6.5 A 6.5 A
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
极性/信道类型 P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
最大功率耗散 (Abs) 25 W 25 W 25 W 25 W 25 W 25 W 25 W 25 W 25 W 25 W
表面贴装 YES YES YES NO YES YES NO YES YES YES
外壳连接 SOURCE - DRAIN - SOURCE SOURCE - DRAIN DRAIN DRAIN
最小漏源击穿电压 200 V - 200 V 200 V 100 V 200 V 200 V 200 V 100 V 100 V
最大漏极电流 (ID) 4 A - 4 A 4 A 6.5 A 4 A 4 A 4 A 6.5 A 6.5 A
JESD-30 代码 R-CQCC-N15 - R-XUUC-N3 O-MBCY-W3 R-CQCC-N15 R-CQCC-N15 O-MBCY-W3 R-XUUC-N3 R-XUUC-N3 R-XUUC-N3
JESD-609代码 e0 e0 - e0 e0 e0 e0 e0 e0 -
元件数量 1 - 1 1 1 1 1 1 1 1
端子数量 15 - 3 3 15 15 3 3 3 3
封装主体材料 CERAMIC, METAL-SEALED COFIRED - UNSPECIFIED METAL CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED METAL UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR - RECTANGULAR ROUND RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER - UNCASED CHIP CYLINDRICAL CHIP CARRIER CHIP CARRIER CYLINDRICAL UNCASED CHIP UNCASED CHIP UNCASED CHIP
峰值回流温度（摄氏度） NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Qualified - Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified
参考标准 MIL-19500/564 - MIL-19500/564F MIL-19500/564 MIL-19500/564 MIL-19500/564 MIL-19500/564 MIL-19500/564F MIL-19500/564F MIL-19500/564F
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
端子形式 NO LEAD - NO LEAD WIRE NO LEAD NO LEAD WIRE NO LEAD NO LEAD NO LEAD
端子位置 QUAD - UPPER BOTTOM QUAD QUAD BOTTOM UPPER UPPER UPPER
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1 - - -
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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