Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +12V, V
EE
= -7V, V
L
= +3.3V, T
A
= +25°C, unless otherwise noted. Specifications at T
A
= T
MIN
and T
A
= T
MAX
are guaranteed
by design and characterization. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
FORCE VOLTAGE
Force Input Voltage
Range
Forced Voltage
Input Bias Current
Forced-Voltage Offset
Forced-Voltage-Offset
Temperature Coefficient
Forced-Voltage Gain
Error
Forced-Voltage-Gain
Temperature Coefficient
Forced-Voltage Linearity
Error
MEASURE CURRENT
Measure-Current Offset
Measure-Current-Offset
Temperature Coefficient
Measure-Current Gain
Error
Measure-Current-Gain
Temperature Coefficient
Linearity Error
2
SYMBOL
V
IN0_
,
V
IN1_
V
DUT
CONDITIONS
MIN
TYP
MAX
UNITS
V
EE
+ 2.5
DUT current at full scale
DUT current = 0A
V
CC
= +12V, V
EE
= -7V
V
CC
= +18V, V
EE
= -12V
-2
-7
V
EE
+ 2.5
±1
-25
±100
V
CC
- 2.5
+7
+13
V
CC
- 2.5
V
V
µA
V
FOS
+25
mV
µV/°C
V
FGE
Nominal gain of +1
-1
0.005
±10
+1
%
ppm/°C
V
FLER
Gain and offset errors calibrated out (Notes 3, 4)
-0.02
+0.02
%FSR
I
MOS
(Note 3)
-1
±20
+1
%FSR
ppm/°C
I
MGE
(Note 5)
-1
±20
+1
%
ppm/°C
I
MLER
Gain and offset errors calibrated out
(Notes 3, 4, 6)
-0.02
+0.02
%FSR
Maxim Integrated
MAX9951/MAX9952
Dual Per-Pin Parametric
Measurement Units
DC ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +12V, V
EE
= -7V, V
L
= +3.3V, T
A
= +25°C, unless otherwise noted. Specifications at T
A
= T
MIN
and T
A
= T
MAX
are guaranteed
by design and characterization. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
Measure-Output-Voltage
Range Over Full-Current
Range
Current-Sense Amp
Offset-Voltage Input
Rejection of Output-
Measure Error Due to
Common-Mode Sense
Voltage
SYMBOL
V
IOS
= V
DUTGND
V
MSR_
V
IOS
= 4V + V
DUTGND
V
IOS
Relative to V
DUTGND
0
-0.2
+8
+4.4
V
CONDITIONS
MIN
-4
TYP
MAX
+4
V
UNITS
CMVR
LER
(Notes 5 and 7)
+0.001
+0.007
%FSR/V
Range E, R_E = 500kΩ
Range D, R_D = 50kΩ
Measure-Current Range
Range C, R_C = 5kΩ
Range B, R_B = 500Ω
Range A, R_A = 15.6Ω
FORCE CURRENT
Input Voltage Range for
Setting Forced Current
Over Full Range
Current-Sense Amp
Offset-Voltage Input
IOS_ Input Bias Current
Forced-Current Offset
Forced-Current-Offset
Temperature Coefficient
Forced-Current Gain
Error
Forced-Current-Gain
Temperature Coefficient
Forced-Current Linearity
Error
Rejection of Output Error
Due to Common-Mode
Load Voltage
I
FLER
Gain and offset errors calibrated out
(Notes 3, 4, 6)
(Note 5)
(Note 3)
V
IN0_,
V
IN1_
V
IOS
V
IOS
= V
DUTGND
V
IOS
= 4V + V
DUTGND
Relative to V
DUTGND
-2
-20
-200
-2
-64
+2
+20
+200
+2
+64
mA
µA
-4
0
-0.2
±1
-1
±20
-1
±20
-0.02
+4
V
+8
+4.4
V
µA
+1
%FSR
ppm/°C
+1
%
ppm/°C
+0.02
%FSR
CMRI
OER
(Notes 5 and 7)
Range E, R_E = 500kΩ
Range D, R_D = 50kΩ
-2
-20
-200
-2
-64
+0.001
+0.007
+2
+20
+200
+2
+64
%FSR/V
µA
Forced-Current Range
Range C, R_C = 5kΩ
Range B, R_B = 500Ω
Range A, R_A = 15.6Ω
mA
Maxim Integrated
3
MAX9951/MAX9952
Dual Per-Pin Parametric
Measurement Units
DC ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +12V, V
EE
= -7V, V
L
= +3.3V, T
A
= +25°C, unless otherwise noted. Specifications at T
A
= T
MIN
and T
A
= T
MAX
are guaranteed
by design and characterization. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER
MEASURE VOLTAGE
Measure-Voltage-Offset
Measure-Voltage-Offset
Temperature Coefficient
Gain Error
Measure-Voltage-Gain
Temperature Coefficient
Measure-Voltage
Linearity Error
Measure-Output-Voltage
Range Over Full DUT
Voltage
FORCE OUTPUT
Off-State Leakage
Current
Short-Circuit Current
Limit
Force-to-Sense Resistor
SENSE INPUT
Input Voltage Range
Leakage Current
COMPARATOR INPUTS
Input Voltage Range
Offset Voltage
Input Bias Current
VOLTAGE CLAMPS
Input Control Voltage
Clamp Voltage
Accuracy
DIGITAL INPUTS
Input High Voltage
(Note 9)
Input Low Voltage
(Note 9)
Input Current
Input Capacitance
V
L
= 5V
V
IH
V
L
= 3.3V
V
L
= 2.5V
V
IL
I
IN
C
IN
V
L
= 5V or 3.3V
V
L
= 2.5V
±1
3.0
+3.5
+2.0
+1.7
+0.8
+0.7
V
µA
pF
V
V
CLLO_
,
V
CLHI_
(Note 8)
V
EE
+ 2.4
-100
V
CC
- 2.4
+100
V
mV
V
EE
+ 2.5
-25
±1
V
CC
- 2.5
+25
V
mV
µA
F option only
V
EE
+ 2.5
-1
V
CC
- 2.5
+1
V
nA
I
LIM-
I
LIM+
R
FS
D option only
-1
-92
+65
8
10
+1
-65
+92
12
nA
mA
kΩ
V
MLER
Gain and offset errors calibrated out
(Notes 3, 4, 6)
DUT current at full scale
DUT current = 0A
V
CC
= +12V, V
EE
= -7V
V
CC
= +18V, V
EE
= -12V
-0.02
-2
-7
V
EE
+ 2.5
V
MGER
Nominal gain of +1
-1
V
MOS
-25
±100
±0.005
±10
+0.02
+7
+13
V
CC
- 2.5
V
+1
+25
mV
µV/°C
%
ppm/°C
%FSR
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
MSR
4
Maxim Integrated
MAX9951/MAX9952
Dual Per-Pin Parametric
Measurement Units
DC ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +12V, V
EE
= -7V, V
L
= +3.3V, T
A
= +25°C, unless otherwise noted. Specifications at T
A
= T
MIN
and T
A
= T
MAX
are guaranteed
by design and characterization. Typical values are at T
从一只苍蝇听觉而来的灵感，启发研究人员们开发出一款全新的低功耗麦克风组件，可望为打造新一代的智能型免电池助听器而铺路。 美国德州大学(UT)奥斯汀分校库克瑞尔工程学院(Cockerell School of Engineering)的研究人员们利用一种黄色的寄生型苍蝇(Ormia ochracea)所具有的特殊听觉结构，开发出一种全新的助听器，它能够只强调配戴者想听到的声音。 这种寄生蝇拥有...[详细]
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