Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1105
Features
• High Dynamic Range
Cascadable 50
Ω
or 75
Ω
Gain Block
• 3 dB Bandwidth:
50 MHz to 1.3 GHz
• 17.5 dBm Typical P
1 dB
at
0.5 GHz
• 3.6 dB Typical Noise Figure
at 0.5 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
Description
The MSA-1105 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for high
dynamic range in either 50 or 75
Ω
systems by combining low noise
figure with high IP
3
. Typical
applications include narrow and
broadband linear amplifiers in
commercial and industrial systems.
05 Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
V
CC
>
8
V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5.5 V
2
5965-9557E
6-458
MSA-1105 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
80 mA
550 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 125°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8 mW/°C for T
C
> 124°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
Parameters and Test Conditions: I
d
= 60 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
Units
dB
dB
dB
dB
GHz
Min.
10.0
Typ.
12.7
12.0
10.5
±
1.0
1.3
1.5:1
1.7:1
Max.
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Gain Flatness
3 dB Bandwidth
[2]
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
dB
dBm
dBm
psec
V
mV/°C
4.4
3.6
17.5
30.0
200
5.5
–8.0
6.6
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (G
P
).
Part Number Ordering Information
Part Number
MSA-1105-TR1
MSA-1105-STR
No. of Devices
500
10
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-459
MSA-1105 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 60 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
.0005
.005
.025
.050
.100
.200
.300
.400
.500
.600
.700
.800
.900
1.000
1.500
2.000
2.500
3.000
.80
.26
.07
.06
.05
.06
.07
.09
.10
.11
.13
.15
.16
.18
.28
.38
.46
.53
–17
–62
–48
–38
–41
–58
–74
–91
–105
–116
–128
–136
–145
–152
174
150
133
118
19.0
13.9
12.8
12.7
12.7
12.6
12.4
12.2
12.0
11.8
11.5
11.2
10.9
10.5
8.8
7.1
5.6
4.2
8.94
4.98
4.36
4.33
4.31
4.26
4.19
4.10
4.00
3.88
3.76
3.63
3.49
3.37
2.75
2.28
1.90
1.62
171
163
174
174
170
162
154
146
138
131
123
116
109
102
72
48
28
11
–26.0
–16.8
–16.4
–16.3
–16.4
–16.2
–16.1
–15.8
–15.6
–15.4
–15.0
–14.7
–15.5
–14.1
–13.2
–12.1
–11.9
–11.6
.050
.144
.151
.153
.152
.155
.157
.163
.166
.171
.178
.184
.188
.197
.219
.248
.254
.262
51
15
4
2
3
5
7
8
8
10
11
11
11
11
7
0
–4
–8
.81
.26
.08
.06
.06
.08
.10
.12
.14
.17
.18
.21
.22
.24
.31
.34
.38
.40
–16
–64
–52
–48
–52
–73
–91
–105
–116
–126
–135
–144
–151
–159
170
151
134
122
0.53
0.93
1.08
1.08
1.09
1.08
1.07
1.06
1.05
1.04
1.03
1.01
1.01
1.00
1.00
0.99
1.02
1.04
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C, Z
O
= 50
Ω
(unless otherwise noted)
16
14
12
Z
O
= 50
Ω
100
T
C
= +85°C
T
C
= +25°C
P
1 dB
(dBm)
18
17
16
P
1 dB
13
12
80 T = –25°C
C
60
G
p
(dB)
8
6
4
I
d
(mA)
Z
O
= 75
Ω
40
5
G
P
11
NF (dB)
20
2
0
.02
0
.05
0.1
0.5 1.0
2.0 3.0
0
2
4
V
d
(V)
6
8
FREQUENCY (GHz)
4
3
–25
+25
TEMPERATURE (°C)
NF
+85
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 60 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, I
d
= 60 mA.
22
I
d
= 70 mA
5.5
I
d
= 70 mA
I
d
= 60 mA
I
d
= 40 mA
20
5.0
P
1 dB
(dBm)
18
NF (dB)
I
d
= 60 mA
4.5
16
4.0
14
I
d
= 40 mA
3.5
12
0.1
0.2 0.3
0.5
1.0
2.0
3.0
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-460
Gp (dB)
10
05 Plastic Package Dimensions
GROUND
4
0.030
0.89
RF INPUT
0.030
DIA
0.76
RF OUTPUT
AND DC BIAS
A
1
3
0.030
±
0.010
0.76
±
0.25
(4 PLCS)
GROUND
2
0.135
±
0.015
3.42
±
0.25
(4 PLCS)
0.030
0.76
0.050
1.27
0.020
0.51
0.008
±
0.002
0.20
±
0.05
0.145
3.68
0.100
±
0.010
2.54
±
0.25
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
0.0005
±
0.010
(0.013
±
0.25)
6-461
