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MT16VDDF6464HG-265A1

DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200

器件类别:存储    存储   

厂商名称:Micron Technology

厂商官网:http://www.mdtic.com.tw/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Micron Technology
零件包装代码
SODIMM
包装说明
DIMM,
针数
200
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
DUAL BANK PAGE BURST
最长访问时间
0.75 ns
其他特性
AUTO/SELF REFRESH
JESD-30 代码
R-XDMA-N200
JESD-609代码
e0
内存密度
4294967296 bit
内存集成电路类型
DDR DRAM MODULE
内存宽度
64
功能数量
1
端口数量
1
端子数量
200
字数
67108864 words
字数代码
64000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
64MX64
封装主体材料
UNSPECIFIED
封装代码
DIMM
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
自我刷新
YES
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
NO LEAD
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
参数对比
与MT16VDDF6464HG-265A1相近的元器件有:MT16VDDF12864HG-26AXX、MT16VDDF12864HY-26AXX、MT16VDDF12864HY-262XX、MT16VDDF12864HG-262XX、MT16VDDF6464HY-265A1、MT16VDDF6464HG-26AXX、MT16VDDF6464HY-262XX、MT16VDDF6464HG-262XX、MT16VDDF6464HY-26AXX。描述及对比如下:
型号 MT16VDDF6464HG-265A1 MT16VDDF12864HG-26AXX MT16VDDF12864HY-26AXX MT16VDDF12864HY-262XX MT16VDDF12864HG-262XX MT16VDDF6464HY-265A1 MT16VDDF6464HG-26AXX MT16VDDF6464HY-262XX MT16VDDF6464HG-262XX MT16VDDF6464HY-26AXX
描述 DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200
是否Rohs认证 不符合 不符合 符合 符合 不符合 符合 不符合 符合 不符合 符合
厂商名称 Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
零件包装代码 SODIMM SODIMM SODIMM SODIMM SODIMM SODIMM SODIMM SODIMM SODIMM SODIMM
包装说明 DIMM, DIMM, DIMM, DIMM, DIMM, DIMM, DIMM, DIMM, DIMM, DIMM,
针数 200 200 200 200 200 200 200 200 200 200
Reach Compliance Code unknown compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
最长访问时间 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 代码 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200 R-XDMA-N200
内存密度 4294967296 bit 8589934592 bit 8589934592 bit 8589934592 bit 8589934592 bit 4294967296 bit 4294967296 bit 4294967296 bit 4294967296 bit 4294967296 bit
内存集成电路类型 DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
内存宽度 64 64 64 64 64 64 64 64 64 64
功能数量 1 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1 1
端子数量 200 200 200 200 200 200 200 200 200 200
字数 67108864 words 134217728 words 134217728 words 134217728 words 134217728 words 67108864 words 67108864 words 67108864 words 67108864 words 67108864 words
字数代码 64000000 128000000 128000000 128000000 128000000 64000000 64000000 64000000 64000000 64000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 64MX64 128MX64 128MX64 128MX64 128MX64 64MX64 64MX64 64MX64 64MX64 64MX64
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度) NOT SPECIFIED 235 260 260 235 260 235 260 235 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
自我刷新 YES YES YES YES YES YES YES YES YES YES
最大供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 NO NO NO NO NO NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 30 30 30 30 30 30 30 30
JESD-609代码 e0 - e4 e4 e0 e4 - e4 - e4
端子面层 Tin/Lead (Sn/Pb) - Gold (Au) Gold (Au) Tin/Lead (Sn/Pb) Gold (Au) - Gold (Au) - Gold (Au)
是否无铅 - 含铅 不含铅 不含铅 含铅 不含铅 含铅 不含铅 含铅 不含铅
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