DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200
厂商名称:Micron Technology
厂商官网:http://www.mdtic.com.tw/
下载文档型号 | MT16VDDF6464HG-26AXX | MT16VDDF12864HG-26AXX | MT16VDDF12864HY-26AXX | MT16VDDF12864HY-262XX | MT16VDDF12864HG-262XX | MT16VDDF6464HY-265A1 | MT16VDDF6464HG-265A1 | MT16VDDF6464HY-262XX | MT16VDDF6464HG-262XX | MT16VDDF6464HY-26AXX |
---|---|---|---|---|---|---|---|---|---|---|
描述 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200 |
是否Rohs认证 | 不符合 | 不符合 | 符合 | 符合 | 不符合 | 符合 | 不符合 | 符合 | 不符合 | 符合 |
厂商名称 | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
零件包装代码 | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM |
包装说明 | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, |
针数 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | unknown | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
最长访问时间 | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 | R-XDMA-N200 |
内存密度 | 4294967296 bit | 8589934592 bit | 8589934592 bit | 8589934592 bit | 8589934592 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit | 4294967296 bit |
内存集成电路类型 | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 | 200 |
字数 | 67108864 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words | 67108864 words |
字数代码 | 64000000 | 128000000 | 128000000 | 128000000 | 128000000 | 64000000 | 64000000 | 64000000 | 64000000 | 64000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 64MX64 | 128MX64 | 128MX64 | 128MX64 | 128MX64 | 64MX64 | 64MX64 | 64MX64 | 64MX64 | 64MX64 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度) | 235 | 235 | 260 | 260 | 235 | 260 | NOT SPECIFIED | 260 | 235 | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
最小供电电压 (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 | NOT SPECIFIED | 30 | 30 | 30 |
是否无铅 | 含铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | 不含铅 | - | 不含铅 | 含铅 | 不含铅 |
JESD-609代码 | - | - | e4 | e4 | e0 | e4 | e0 | e4 | - | e4 |
端子面层 | - | - | Gold (Au) | Gold (Au) | Tin/Lead (Sn/Pb) | Gold (Au) | Tin/Lead (Sn/Pb) | Gold (Au) | - | Gold (Au) |