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NE85639R-T1

RF Bipolar Transistors NPN High Frequency

器件类别:分立半导体    晶体管   

厂商名称:NEC(日电)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
NEC(日电)
包装说明
,
Reach Compliance Code
unknown
最大集电极电流 (IC)
0.1 A
配置
Single
最小直流电流增益 (hFE)
50
最高工作温度
150 °C
极性/信道类型
NPN
最大功率耗散 (Abs)
0.2 W
表面贴装
YES
文档预览
NPN SILICON
OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 2000 MHz TYP
LOW COLLECTOR TO BASE TIME CONSTANT:
C
C
•r
b'b
= 5 ps TYP
LOW FEEDBACK CAPACITANCE:
C
RE
= 0.55 pF TYP
NE944
SERIES
DESCRIPTION
The NE944 series of NPN silicon epitaxial bipolar transistors
is intended for use in general purpose UHF oscillator and
mixer applications. It is suitable for automotive keyless entry
and TV tuner designs.
The device features stable oscillation and small frequency
drift during changes in the supply voltage and over the
ambient temperature range.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE CODE
SYMBOLS
I
CBO
h
FE
V
CE(sat)
f
T
C
OB
C
C
•r
b'b
C
RE
R
TH (J-C)
R
TH (J-A)
P
T
PARAMETERS AND CONDITIONS
Collector Cutoff Current, V
CB
= 12 V, I
E
= 0
DC Current Gain, V
CE
= 10 V, I
C
= 5.0 mA
Collector Saturation Voltage, I
C
= 10 mA, I
B
= 1.0 mA
Gain Bandwidth Product, V
CE
= 3 V, I
E
= 5 mA
Output Capacitance, V
CB
= 3 V, I
E
= 0 mA, f = 1.0 MHz
Collector to Base Time Constant, V
CE
= 3 V,
I
E
= -5.0 mA, f = 31.9 MHz
Feedback Capacitance, V
CB
= 10 V, I
E
= 0 mA, f = 1.0 MHz
Thermal Resistance, Junction to Case (infinite heat sink)
Thermal Resistance, Junction to Ambient (free air)
Power Dissipation
V
GHz
pF
ps
pF
°C/W
°C/W
mW
200
833
150
1.2
2.0
0.7
3.5
1.2
8.0
0.55
5.0
1.0
200
620
150
µA
40
100
NE94430
2SC4184
30
UNITS MIN
TYP MAX MIN
0.1
200
0.5
1.3
50
100
NE94433
2SC3545
33
TYP MAX
0.1
250
0.5
2.0
Note:
1. Electronic Industrial Association of Japan.
California Eastern Laboratories
NE944 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
NE94432, NE94433
NE94430
Storage Temperature
UNITS
V
V
V
mA
°C
°C
°C
RATINGS
30
15
3.0
50
125
150
-55 to +125
T
STG
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Total Power Dissipation, P
T
(mW)
FREE AIR
250
DC Current Gain, h
FE
100
92
V
CE
= 10 V
200
V
CE
= 3 V
50
150
NE94433
100
FREE AIR
50
0
0
25
50
75
100
125
150
NE94430
20
10
0.5
1
5
10
50
Ambient Temperature, T
A
(°C)
Collector Current, I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
5
3
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
Gain Bandwidth Product, ft (GHz)
Feedback Capacitance, Cre (pF)
3
2
2
V
CE
= -5 V
1
0.7
0.5
0.3
0.2
1
0.7
0.5
0.3
0.2
0.1
0.5 0.7 1
2
3
5
7 10
20
30
50
0.1
1
2
3
5
7
10
20
30
Collector Current, I
C
(mA)
Collector to Base Voltage, V
CB
(V)
NE944 SERIES
NE94430
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
NE94433
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG Rn/50
V
CE
(V)
I
C
(mA)
V
CE
= 2.5 V, I
C
= 2.5 mA
500
1000
1500
500
1000
1500
500
1000
1500
3.2
5.4
6.7
3.8
6.3
8.3
3.8
6.3
8.3
11.34
7.22
4.44
12.67
8.28
5.58
13.88
9.53
6.63
0.33
0.29
0.32
0.27
0.28
0.38
0.27
0.27
0.32
63
142
165
79
168
-175
69
160
174
0.75
0.45
0.64
0.70
0.48
0.55
0.75
0.58
0.68
V
CE
= 8 V, I
C
= 5 mA
500
1000
500
1000
3.6
5.8
3.6
6.0
13.00
9.34
12.90
8.90
.43
.29
.44
.32
51
113
.51
117
1.0
0.7
1.04
.70
8
8
10
10
5
5
5
5
V
CE
= 10 V, I
C
= 5 mA
V
CE
= 3 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 5 mA
NE944 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25°C)
j50
j25
j100
120˚
90˚
5
4
60˚
j10
S
22
3 GHz
150˚
3
2
S
12
30˚
3 GHz
0
10
25
50
100
S
11
.05 GHz
0
S
22
.05 GHz
S
21
180˚
0.5 GHz
S
12
.2
0.5 GHz S
21
3 GHz
1
.3
.4
.5 0˚
-j10
S
11
3 GHz
-j25
-j50
-j100
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2.5 V, I
C
= 2.5 mA)
-150˚
-30˚
-120˚
-90˚
-60˚
NE94430
V
CE
= 2.5 V, I
C
= 2.5 mA
FREQUENCY
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
MAG
.929
.854
.735
.608
.498
.423
.382
.355
.338
.327
.318
.308
.315
.340
.379
S
11
ANG
-13.0
-24.4
-50.1
-74.2
-96.3
-113.8
-126.3
-136.7
-145.4
-152.6
-159.5
172.6
148.6
125.9
105.4
MAG
4.051
3.892
3.591
3.285
2.956
2.607
2.273
2.013
1.803
1.630
1.490
1.071
0.851
0.710
0.614
S
21
ANG
160.3
148.7
129.9
114.9
102.1
92.2
84.7
78.4
72.9
68.0
63.5
45.4
31.3
21.1
14.8
MAG
.017
.030
.049
.060
.069
.076
.084
.091
.099
.107
.115
.157
.201
.257
.326
S
12
ANG
89.3
66.4
56.9
53.8
52.3
52.4
53.1
54.1
54.6
55.3
56.0
58.2
58.7
58.2
55.2
MAG
.977
.936
.843
.788
.756
.738
.728
.721
.717
.713
.710
.704
.702
.691
.670
S
22
ANG
-6.0
-10.9
-16.2
-18.4
-19.9
-21.8
-23.7
-25.7
-28.0
-30.2
-32.6
-43.9
-56.4
-69.1
-82.8
0.10
0.47
0.65
0.78
0.89
0.99
1.06
1.13
1.17
1.21
1.22
1.25
1.20
1.14
1.11
K
S
21
(dB)
12.2
11.8
11.1
10.3
9.4
8.3
7.1
6.1
5.1
4.2
3.5
0.6
-1.4
-3.0
-4.2
MAG
1
(dB)
23.8
21.1
18.7
17.4
16.3
15.4
12.8
11.3
10.1
9.1
8.2
5.4
3.7
2.1
0.8
V
CE
= 3 V, I
CE
= 5 mA
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
.819
.740
.511
.414
.354
.326
.313
.306
.303
.302
.303
.316
.333
.361
.401
-19.8
-38.0
-76.6
-106.3
-125.6
-138.4
-147.8
-155.6
-162.1
-167.8
-173.3
163.0
141.1
119.9
100.9
7.561
6.980
5.906
4.762
3.819
3.152
2.671
2.318
2.050
1.839
1.669
1.169
0.914
0.751
0.642
154.4
138.9
117.4
101.6
91.5
84.3
78.4
73.3
68.7
64.4
60.4
43.8
30.2
20.2
13.9
.014
.025
.037
.046
.052
.064
.072
.081
.089
.098
.106
.151
.198
.259
.332
88.3
63.8
59.4
58.2
59.9
60.3
61.7
62.4
62.7
63.2
63.5
64.6
64.3
62.8
58.7
.946
.874
.771
.732
.713
.705
.701
.699
.697
.696
.695
.696
.699
.691
.672
-8.5
-13.2
-15.6
-16.4
-17.5
-19.2
-21.1
-23.2
-25.4
-27.7
-30.1
-41.4
-53.8
-66.3
-79.9
0.20
0.57
0.77
0.92
1.07
1.09
1.15
1.18
1.21
1.22
1.24
1.19
1.12
1.05
1.02
17.6
16.9
15.4
13.6
11.6
10.0
8.5
7.3
6.2
5.3
4.4
1.4
-0.8
-2.5
-3.8
27.3
24.5
22.0
20.2
17.0
15.1
13.3
12.0
10.8
9.9
9.0
6.3
4.6
3.3
2.0
(
K
±
K
2
- 1
).
When K
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
| - |S
11
| - |S
22
|
,
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE944 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25°C)
j50
j25
j100
90˚
120˚
60˚
j10
S
11
3 GHz
150˚
S
12
3 GHz
S
21
3 GHz
S
12
.1 .2
0.5 GHz
8
.3
.4
30˚
S
21
0.5 GHz
0
S
22
.05 GHz
0
10
25
50
100
180˚
.5 0˚
S
11
.05 GHz
-j10
S
22
3 GHz
-j25
-j50
-j100
Coordinates in Ohms
Frequency in GHz
(V
CE
= 3 V, I
C
= 10 mA)
-150˚
10
12
-120˚
14
-90˚
-60˚
-30˚
NE94430
V
CE
= 3 V, I
C
= 10 mA
FREQUENCY
(MHz)
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
MAG
.585
.496
.354
.320
.313
.310
.313
.317
.322
.326
.330
.354
.374
.402
.438
S
11
ANG
-42.0
-76.7
-119.1
-138.2
-150.2
-158.3
-164.8
-170.5
-175.4
-179.9
175.5
154.6
134.2
114.4
96.2
MAG
12.113
10.005
6.964
5.042
3.910
3.184
2.680
2.316
2.040
1.824
1.652
1.145
0.887
0.722
0.613
S
21
ANG
141.5
124.0
102.0
91.6
84.5
78.7
73.6
69.1
64.8
60.8
57.1
41.2
28.1
18.6
13.2
MAG
.010
.015
.028
.039
.049
.058
.067
.076
.084
.093
.101
.148
.202
.269
.347
S
12
ANG
70.5
60.1
63.7
65.1
66.7
66.7
67.6
68.2
68.2
68.6
68.7
70.1
69.0
66.2
60.7
MAG
.896
.799
.721
.702
.693
.690
.689
.689
.689
.690
.690
.694
.697
.689
.668
S
22
ANG
-11.0
-13.5
-13.4
-14.0
-15.4
-17.3
-19.5
-21.8
-24.2
-26.6
-29.1
-41.0
-53.8
-66.7
-80.6
0.64
0.95
1.05
1.12
1.16
1.21
1.23
1.24
1.26
1.26
1.27
1.18
1.07
1.01
1.01
K
S
21
(dB)
21.7
20.0
16.9
14.0
11.8
10.1
8.6
7.3
6.2
5.2
4.4
1.2
-1.0
-2.8
-4.3
MAG
(dB)
30.8
28.2
22.5
19.1
16.6
14.6
13.1
11.9
10.8
9.9
9.0
6.3
4.8
3.7
2.1
V
CE
= 10 V, Ic = 5 mA
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
.860
.788
.574
.428
.349
.312
.293
.282
.277
.274
.273
.283
.301
.334
.380
-17.7
-35.1
-68.0
-95.6
-114.9
-127.9
-138.0
-146.3
-153.6
-159.8
-165.8
168.0
144.3
121.7
101.5
7.577
6.982
6.049
4.966
4.020
3.329
2.823
2.450
2.165
1.941
1.759
1.223
0.949
0.772
0.649
156.2
141.8
120.3
104.4
93.9
86.6
80.7
75.6
70.9
66.7
62.8
46.3
32.5
22.0
15.0
.012
.021
.033
.039
.045
.053
.060
.067
.074
.082
.088
.126
.167
.221
.290
79.9
60.9
60.0
59.9
61.9
62.5
63.9
64.5
65.0
66.0
66.3
68.6
69.7
69.6
66.7
.960
.909
.826
.792
.776
.768
.765
.763
.762
.761
.760
.763
.768
.766
.755
-6.1
-10.2
-12.6
-13.6
-14.7
-16.3
-18.1
-19.9
-22.0
-24.0
-26.1
-36.0
-46.8
-57.6
-69.3
0.30
0.57
0.71
0.86
0.98
1.04
1.09
1.13
1.15
1.15
1.18
1.12
1.03
0.93
0.87
17.6
16.9
15.6
13.9
12.1
10.4
9.0
7.8
6.7
5.8
4.9
1.7
-0.5
-2.2
-3.8
28.0
25.2
22.6
21.0
19.5
16.7
14.9
13.5
12.3
11.4
10.4
7.8
6.6
5.4
3.5
(
K
±
K
2
- 1
).
When K
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
| - |S
11
| - |S
22
|
,
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
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参数对比
与NE85639R-T1相近的元器件有:NE85639-T1。描述及对比如下:
型号 NE85639R-T1 NE85639-T1
描述 RF Bipolar Transistors NPN High Frequency 射频(RF)双极晶体管 NPN High Frequency
是否Rohs认证 不符合 不符合
厂商名称 NEC(日电) NEC(日电)
Reach Compliance Code unknown unknown
最大集电极电流 (IC) 0.1 A 0.1 A
配置 Single Single
最小直流电流增益 (hFE) 50 50
最高工作温度 150 °C 150 °C
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 0.2 W 0.2 W
表面贴装 YES YES
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