DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N055CHE
NP82N055DHE
NP82N055EHE
PACKAGE
TO-220AB
TO-262
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 8.6 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
•
Low C
iss
: C
iss
= 3500 pF TYP.
•
Built-in gate protection diode
5
NP82N055KHE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
55
±20
±82
±300
1.8
163
175
–55 to +175
72 / 49 / 17
51 / 240 / 289
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
(TO-262)
Drain Current (pulse)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
≤
10
µ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 28 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.92
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14138EJ5V0DS00 (5th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
1999
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 44 V
V
GS
= 10 V
I
D
= 82 A
I
F
= 82 A, V
GS
= 0 V
I
F
= 82 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 55 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 41 A
V
GS
= 10 V, I
D
= 41 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 28 V, I
D
= 41 A
V
GS(on)
= 10 V
R
G
= 1
Ω
2.0
19
3.0
38
6.9
3500
550
270
31
18
61
19
65
18
24
1.0
45
63
8.6
5250
830
490
69
45
120
47
100
MIN.
TYP.
MAX.
10
±10
4.0
UNIT
µ
A
µ
A
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
τ
= 1
µ
s
Duty Cycle
≤
1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14138EJ5V0DS
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
175
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0
150
125
100
75
50
25
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature - ˚C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
I
D
- Drain Current - A
PW
T
C
- Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Single Pulse Avalanche Energy - mJ
350
300
289 mJ
240 mJ
100
d
ite )
Lim10 V
)
on
=
S(
R
D
t V
GS
(a
=1
I
D(DC)
DC
Po
Lim wer
ite Dis
d
sip
ati
on
1m
10
0
µ
s
0
µ
s
s
250
200
150
100
51 mJ
10
I
AS
= 17 A
49 A
72 A
1
T
C
= 25˚C
0.1 Single Pulse
0.1
50
0
25
50
75
100
125
150
175
1
10
100
V
DS -
Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature - ˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
1
R
th(ch-C)
= 0.92˚C/W
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14138EJ5V0DS
3
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
T
A
=
−55˚C
25˚C
75˚C
150˚C
175˚C
300
250
I
D
- Drain Current - A
I
D
- Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
=10 V
100
200
150
100
50
10
1
0.1
2
3
4
5
V
DS
= 10 V
6
7
0
0
1
2
3
4
Pulsed
5
6
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
10
T
A
= 175˚C
75˚C
25˚C
−50˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
| y
fs
| - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
1
10
I
D
= 41 A
0.1
0.01
0.01
0.1
1
10
100
0
0
5
10
15
20
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS
- Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
µ
A
3.0
20
Pulsed
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
V
GS
= 10 V
2.0
1.0
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14138EJ5V0DS
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
Pulsed
16
14
12
10
8
6
4
2
0
−50
0
50
100
I
D
= 41 A
150
V
GS
= 10 V
1000
I
SD
- Diode Forward Current - A
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
V
GS
= 10 V
V
GS
= 0 V
10
100
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
V
GS
= 0 V
f = 1 MHz
C
iss
, C
oss
, C
rss
- Capacitance - pF
Figure15. SWITCHING CHARACTERISTICS
1000
t
f
100
t
d(off)
t
d(on)
t
r
10000
C
iss
1000
C
oss
C
rss
100
0.1
10
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
µ
s
V
GS
= 0 V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
V
DS
- Drain to Source Voltage - V
16
14
V
GS
- Gate to Source Voltage - V
100
60
V
DD
= 44 V
28 V
11 V
40
V
GS
12
10
8
6
10
20
V
DS
0
0
20
40
60
I
D
= 82 A
4
2
80
1
0.1
1.0
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14138EJ5V0DS
5
嵌入式系统
