7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3
厂商官网:https://www.rocelec.com/
器件标准:
下载文档型号 | NTD50N03RG | NTD50N03RT4G | NTD50N03R-35G | NTD50N03R-1G | NTD50N03RT4 |
---|---|---|---|---|---|
描述 | 7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3 | 7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3 | 7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AC-01, 3 IPAK-3 | 7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3 | 7.8A, 25V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369AA-01, DPAK-3 |
是否无铅 | 不含铅 | 不含铅 | 含铅 | 不含铅 | 含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 不符合 |
厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
包装说明 | LEAD FREE, CASE 369AA-01, DPAK-3 | LEAD FREE, CASE 369AA-01, DPAK-3 | LEAD FREE, CASE 369AC-01, 3 IPAK-3 | LEAD FREE, CASE 369D-01, DPAK-3 | CASE 369AA-01, DPAK-3 |
针数 | 3 | 3 | 3 | 3 | 3 |
制造商包装代码 | CASE 369AA-01 | CASE 369AA-01 | CASE 369AC-01 | CASE 369D-01 | CASE 369AA-01 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
雪崩能效等级(Eas) | 20 mJ | 20 mJ | 20 mJ | 20 mJ | 20 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 25 V | 25 V | 25 V | 25 V | 25 V |
最大漏极电流 (ID) | 7.8 A | 7.8 A | 7.8 A | 7.8 A | 7.8 A |
最大漏源导通电阻 | 0.014 Ω | 0.014 Ω | 0.014 Ω | 0.014 Ω | 0.014 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 |
JESD-609代码 | e3 | e3 | e3 | e3 | e0 |
湿度敏感等级 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 3 | 3 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 | 235 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 180 A | 180 A | 180 A | 180 A | 180 A |
认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
表面贴装 | YES | YES | NO | NO | YES |
端子面层 | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | TIN LEAD |
端子形式 | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 40 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |