Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
厂商名称:Pyramid Semiconductor Corporation
厂商官网:http://www.pyramidsemiconductor.com/
下载文档型号 | P4C1024-35J4I | P4C1024-20P3C | P4C1024-25P3I | P4C1024-20J3I |
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描述 | Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | Standard SRAM, 128KX8, 20ns, CMOS, PDIP32, 0.300 INCH, PLASTIC, DIP-32 | Standard SRAM, 128KX8, 25ns, CMOS, PDIP32, 0.300 INCH, PLASTIC, DIP-32 | Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | SOJ | DIP | DIP | SOJ |
包装说明 | SOJ, SOJ32,.44 | DIP, DIP32,.3 | DIP, DIP32,.3 | 0.300 INCH, PLASTIC, SOJ-32 |
针数 | 32 | 32 | 32 | 32 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | 3A991.B.2.B | EAR99 | 3A991.B.2.B |
最长访问时间 | 35 ns | 20 ns | 25 ns | 20 ns |
I/O 类型 | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PDSO-J32 | R-PDIP-T32 | R-PDIP-T32 | R-PDSO-J32 |
JESD-609代码 | e0 | e0 | e0 | e0 |
长度 | 20.955 mm | 40.64 mm | 40.64 mm | 20.955 mm |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 |
字数 | 131072 words | 131072 words | 131072 words | 131072 words |
字数代码 | 128000 | 128000 | 128000 | 128000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 70 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | - | -40 °C | -40 °C |
组织 | 128KX8 | 128KX8 | 128KX8 | 128KX8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | SOJ | DIP | DIP | SOJ |
封装等效代码 | SOJ32,.44 | DIP32,.3 | DIP32,.3 | SOJ32,.34 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 3.7592 mm | 5.08 mm | 5.08 mm | 3.7592 mm |
最大待机电流 | 0.02 A | 0.02 A | 0.02 A | 0.02 A |
最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
最大压摆率 | 0.16 mA | 0.16 mA | 0.165 mA | 0.175 mA |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | NO | NO | YES |
技术 | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND |
端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 11.76 mm | 7.62 mm | 7.62 mm | 8.56 mm |
厂商名称 | Pyramid Semiconductor Corporation | - | Pyramid Semiconductor Corporation | Pyramid Semiconductor Corporation |