DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143E series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Product data sheet
Supersedes data of 2004 Mar 18
2004 Aug 05
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PDTC143E series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
TYP.
−
−
4.7
4.7
MAX.
50
100
−
−
UNIT
V
mA
kΩ
kΩ
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTC143EE
PDTC143EEF
PDTC143EK
PDTC143EM
PDTC143ES
PDTC143ET
PDTC143EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
02
51
02
E1
TC143E
*02
*02
PDTA143EE
PDTA143EEF
PDTA143EK
PDTA143EM
PDTA143ES
PDTA143ET
PDTA143EU
MARKING CODE
(1)
PNP COMPLEMENT
2004 Aug 05
2
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTC143E series
PINNING
TYPE NUMBER
PDTC143ES
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
2
R1
1
R2
3
MAM364
DESCRIPTION
base
collector
emitter
1
2
3
3
PDTC143EE
PDTC143EEF
PDTC143EK
PDTC143ET
PDTC143EU
1
Top view
2
MDB269
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
R2
3
3
2
PDTC143EM
handbook, halfpage
1
2
3
R1
1
3
1
bottom view
MHC506
base
emitter
collector
3
2
R2
2
2004 Aug 05
3
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PDTC143EE
PDTC143EEF
PDTC143EK
PDTC143EM
PDTC143ES
PDTC143ET
PDTC143EU
−
−
−
−
−
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
PDTC143E series
VERSION
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
leadless ultra small plastic package; 3 solder lands; body
1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
SOT490
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
−
−
−
−
−
−
−
−65
−
−65
500
250
250
200
150
250
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
−
−
−
−
+30
−10
100
100
V
V
mA
mA
CONDITIONS
open emitter
open base
open collector
−
−
−
MIN.
MAX.
50
50
10
V
V
V
UNIT
2004 Aug 05
4
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
SOT490
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
CONDITIONS
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 10 mA
I
C
= 100
μA;
V
CE
= 5 V
I
C
= 20 mA; V
CE
= 0.3 V
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
PDTC143E series
VALUE
250
500
500
625
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
MIN.
−
−
−
−
30
−
−
2.5
3.3
0.8
−
TYP.
−
−
−
−
−
−
1.1
1.9
4.7
1
−
MAX.
100
1
50
900
−
150
0.5
−
6.1
1.2
2.5
UNIT
nA
μA
μA
μA
mV
V
V
kΩ
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
pF
2004 Aug 05
5
