RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet
January 2002
30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA09834.
Features
• 30A, 60V
• r
DS(ON)
= 0.065
Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFG30P06
RFP30P06
RF1S30P06SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG30P06
RFP30P06
Symbol
D
G
F1S30P06
S
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
RFG30P06, RFP30P06, RF1S30P06SM
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG30P06, RFP30P06
RF1S30P06SM
-60
-60
±
20
30
Refer to Peak Current Curve
Refer to UIS Curve
135
0.9
-55 to 175
300
260
UNITS
V
V
V
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
TO-220, TO-263
TO-247
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DD
= -48V, I
D
= 30A,
R
L
= 1.6
Ω,
I
G(REF)
= 1.6mA
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= -60V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±
20V
I
D
= -30A, V
GS
= -10V (Figure 9)
V
DD
= -30V, I
D
= 15A, R
L
= 2.00
Ω
, V
GS
= -10V
R
G
= 6.25
Ω
(Figure 13)
MIN
-60
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
15
23
28
18
-
140
70
5.5
3200
800
175
-
-
MAX
-
-4
-1
-25
±
100
0.065
80
-
-
-
-
100
170
85
6.6
-
-
-
1.11
62
30
UNITS
V
V
µ
A
µ
A
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTES:
2. Pulse test: pulse width
≤
300µs maximum, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
SYMBOL
V
SD
t
RR
TEST CONDITIONS
I
SD
= -30A
I
SD
= -30A, dI
SD
/dt = -100A/
µ
s
MIN
-
-
TYP
-
-
MAX
-1.5
150
MAX
V
ns
©2002 Fairchild Semiconductor Corporation
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
RFG30P06, RFP30P06, RF1S30P06SM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
150
175
-30
0.8
0.6
0.4
0.2
0
T
C
, CASE TEMPERATURE (
o
C)
Unless Otherwise Specified
-40
-20
-10
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-200
-100
I
D
, DRAIN CURRENT (A)
100µs
I
DM
, PEAK CURRENT (A)
-500
V
GS
= -20V
V
GS
= -10V
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
1ms
-10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
-1
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
-100
175
–
T C
I
=
I 25
---------------------
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
10
-5
T
C
= 25
o
C
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-1
-100
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
RFG30P06, RFP30P06, RF1S30P06SM
Typical Performance Curves
-100
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 25
o
C
I
D,
DRAIN CURRENT (A)
-60
Unless Otherwise Specified
(Continued)
-75
V
GS
= -20V
V
GS
= -10V
V
GS
= -8V
V
GS
= -7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -6V
-15
V
GS
= -4.5V
0
-2
-4
-6
-8
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -5V
-45
-10
STARTING T
J
= 150
o
C
-30
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
-1
0.1
0
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322,
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
-75
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-55
o
C
-45
175
o
C
-30
25
o
C
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= 30A
1.5
-60
1
0.5
-15
0
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
2
I
D
= 250µA
1.5
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
1
1
0.5
0.5
0
-80
-40
0
40
80
120
160
200
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J,
JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
RFG30P06, RFP30P06, RF1S30P06SM
Typical Performance Curves
4000
C
ISS
C, CAPACITANCE (pF)
3000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-60
V
DD
= BV
DSS
-45
R
L
= 2.0Ω
I
G(REF)
= -1.6mA
V
GS
= -10V
-30
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
DRAIN SOURCE VOLTAGE
0
I
G(REF)
I
G(ACT)
0
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
GATE
SOURCE
VOLTAGE
V
DD
= BV
DSS
-7.5
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
2000
C
OSS
1000
C
RSS
0
0
-5
-10
-15
-5
-15
-2.5
-20
-25
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
V
DS
t
AV
L
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
R
G
0
-
+
V
DD
V
DD
0V
V
GS
DUT
t
P
I
AS
0.01Ω
I
AS
t
P
BV
DSS
V
DS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
t
ON
t
d(ON)
t
OFF
t
d(OFF)
t
r
t
f
10%
10%
V
DS
R
L
V
GS
0
-
V
DD
V
GS
R
GS
+
V
DS
V
GS
0
90%
90%
DUT
10%
50%
PULSE WIDTH
90%
50%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFG30P06, RFP30P06, RF1S30P06SM Rev. B
